This invention relates to an improved process for producing ternary metal silicon nitride films by the cyclic deposition of the precursors. The improvement resides in the use of a metal amide and a silicon source having both NH and SiH functionality as the precursors leading to the formation of such metal-SiN films. The precursors are applied sequentially via cyclic deposition onto the surface of a substrate. Exemplary silicon sources are monoalkylamino silanes and hydrazinosilanes represented by the formulas: (R1NH)nSiR2mH4-n-m (n=1,2; m=0,1,2; n+m=<3); and (R32N—NH)xSiR4yH4-x-y (x=1,2; y=0,1,2; x+y=<3) wherein in the above formula R1-4 are same or different and independently selected from the group consisting of alkyl, vinyl, allyl, phenyl, cyclic alkyl, fluoroalkyl, silylalkyls.