38results about How to "Lower write current" patented technology

The invention provides a magnetic element, a memory system and a write operation method thereof. The magnetic element comprises a magnetic fixation layer, a non-magnetic isolation layer, a magnetic free layer and a cover layer. The non-magnetic isolation layer is arranged between the magnetic fixation layer and the magnetic free layer. The cover layer connects the magnetic free layer and an external semiconductor transistor circuit. The magnetic free layer has demagnetizing energy perpendicular to the membrane plane direction and anisotropy energy perpendicular to anisotropy. The anisotropy energy perpendicular to anisotropy is lower than the demagnetizing energy perpendicular to the membrane plane direction. When the write current flows through the magnetic element, the magnetic free layer can be switched between parallel and anti-parallel magnetic states in the plane direction to achieve the purpose of magnetic storage under a spin torque transmission effect.

The invention discloses a magnetic component for achieving spinning torque transfer switching, a fabrication method of the magnetic component and the magnetic storage device. The magnetic component comprises a dual-pin perpendicular anisotropy magnetic fixed layer, non-magnetic spacing layers and a perpendicular anisotropy magnetic free layer, wherein the perpendicular anisotropy magnetic free layer is arranged between the dual non-magnetic spacing layers and is provided with demagnetization energy and anisotropy energy, the demagnetization energy is perpendicular to a film plane direction, the anisotropy energy is correspondingly perpendicular to anisotropy, and the perpendicular anisotropy energy is larger than the demagnetization energy perpendicular to the film plane direction. When a writing current passes through the magnetic component, the perpendicular anisotropy magnetic free layer can be switched between a parallel magnetic state perpendicular to a plane direction and a reverse parallel magnetic state by a spinning torque transfer effect so as to achieve the purpose of magnetic storage.

The present invention relates to a storage element and a storage device. The storage element includes a storage layer that stores information on the basis of a magnetization state of a magnetic material; a fixed magnetization layer that has a magnetization serving as a reference of the information stored in the storage layer; an interlayer that is formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a cap layer that is provided to be adjacent to the storage layer and opposite to the interlayer; and a metal cap layer that is provided to be adjacent to the cap layer and opposite to the storage layer.

The invention discloses a storing element and a storing device. The storing element comprises a storing layer having a magnetization piece varying the magnetization direction with corresponding information and perpendicular to the surface of a film; a magnetization fixing layer having a magnetization piece perpendicular to the surface of the film; an insulating layer equipped between the storing layer and magnetization fixing layer. Self-spinning polarized electrons are injected along the overlapping direction of the layer structure. The magnetization direction of the storing layer is then changed. Information about the storing layer is recorded. The effective counter magnetic field received by the storing layer has a size smaller than the saturated magnetization volume of the storing layer. Meanwhile, a Ta film is formed in a way to a magnetization fixing layer face opposed to the insulating layer.

The invention discloses a memory element and a memory device. The memory element includes a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co-Fe-B magnetic layer.

In an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path (102) coupled to the MTJ structure and a write path (104) coupled to the MTJ structure. The write path (104) is separate from the read path (102). The device in substance comprises a pair of serially coupled MTJ structures (106, 108), whereby the read path (102) comprises only one of the MTJ structure (108). This provides for combined improved read margin and improved write margin.

Provided are a storage element for which TMR characteristics can be improved, a storage device equipped with the storage element, and a magnetic head. The storage element has a layer structure including a storage layer in which the magnetization direction is changed in response to information, a magnetization fixed layer which has magnetization orthogonal to the film surface as a reference for the information stored in the storage layer, and an intermediate layer which is provided between the storage layer and the magnetization fixed layer and is made of a nonmagnetic material. Carbon is inserted into the intermediate layer and a current is supplied in the stacking direction of the layer structure so that the magnetization direction of the storage layer is changed to record information in the storage layer.

The invention discloses a memory element and a memeory apparatus. The memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co-Fe-B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.

The present invention discloses a two-dimensional material phase change memory cell, which comprises a substrate and a lower electrode, a phase change layer, an upper electrode and a two-dimensional material layer sequentially arranged on the substrate from bottom to top. The two-dimensional material layer is arranged on a contact surface between the phase change layer and the lower electrode andis also arranged on a contact surface between the phase change layer and the upper electrode. The two-dimensional material used in the invention has a very small thermal conductivity. In addition to the thermal resistance formed by the interface, the two-dimensional material itself reduces the heat loss and writing current and improves the electrothermal efficiency. The two-dimensional material layer also has very good mechanical properties such as the high elasticity coefficient, high compressive property and fracture strength, and can play a role of buffering. In the phase change process, the phase change layer is subjected to the smaller thermal expansion extrusion stress and strain, so the stress and strain between the phase change layer and the electrode layer during the phase changetemperature rise can be effectively reduced, and the service life and write-erase times of the device are increased.

A non-volatile memory element includes a recording layer that includes a phase change material, a lower electrode provided in contact with the recording layer, an upper electrode provided in contact with a portion of the upper surface of the recording layer, a protective insulation film provided in contact with the other portion of the upper surface of the recording layer, and an interlayer insulation film provided on the protective insulation film. High thermal efficiency can thereby be obtained because the size of the area of contact between the recording layer and the upper electrode is reduced. Providing the protective insulation film between the interlayer insulation film and the upper surface of the recording layer makes it possible to reduce damage sustained by the recording layer during patterning of the recording layer or during formation of the through-hole for exposing a portion of the recording layer.

An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

The invention provides a storage unit and a memory with the same. The storage unit comprises a first MTJ and a second MTJ; the first MTJ comprises a polarization layer; any cross section in a height direction of the first MTJ has a first surface area; the second MTJ comprises a reference layer; the first MTJ and the second MTJ share a free layer; any cross section in a height direction of the second MTJ has a second surface area; and the first surface area is greater than the second surface area. When a certain amount of current passes through the second MTJ, a magnetization direction of the free layer is turned over through a magnetic rotation transfer moment effect; when the magnetization directions of the reference layer and the free layer are parallel or anti-parallel, the resistance of the second MTJ is in a low or high-resistance state; and the polarization layer and the free layer are isolated through a first nonmagnetic layer, and the magnetization directions of the polarization layer and the free layer are perpendicular. Due to the adoption of a novel device structure, a writing current of the magnetic rotation memory can be effectively reduced, the writing speed of the magnetic rotation memory can be increased, and the like.

A spin-orbit momentum moment magnetic memory that does not require an external magnetic field. The memory SOT-MTJ is based on perpendicular magnetic anisotropy. In addition to the free layer, tunneling barrier layer, reference layer and antiferromagnetic metal in the traditional MTJ structure, layer, an additional non-ferromagnetic metal layer was added, the material of the anti-ferromagnetic metal layer was optimized, and the shape of the tunnel barrier layer was improved; the SOT-MTJ structure is the bottom electrode from bottom to top, There are seven layers in total including non-ferromagnetic metal layer, ferromagnetic metal layer 1 which is the free layer, wedge tunneling barrier layer, ferromagnetic metal layer 2 which is the reference layer, antiferromagnetic metal layer and top electrode. This invention can perform writing operations without an external magnetic field, so it consumes less energy than the previous SOT-MRAM and has better scaling performance as the process node decreases.

A magnetic storage device (10), comprising a magnetoresistance effect element (20), the magnetoresistance effect element (20) is opened with at least a part of a pair of side surfaces (20A, 20B) and a yoke (18) The end surfaces (14A, 16B) of the end portions (14, 16) are arranged in a manner facing each other, and a pair of side surfaces (20A, 20B) of the magnetoresistance effect element (20) and a pair of yoke (18) are open. Each end surface (14A, 16B) of the end portion (14, 16) has a predetermined angle, and the write current can be reduced while having a small and simple structure.

To provide a magnetic storage element in which a writing current is reduced while maintaining the magnetism-retaining characteristics of a storage layer; and an electronic device. A magnetic storage element, provided with: a spin orbit layer extended in one direction; a write line electrically connected to the spin orbit layer, the write line channeling a current in the extension direction of thespin orbit layer; a tunnel junction element provided on the spin orbit layer by laminating a memory layer, an insulator layer, and a magnetization fixed layer in the stated order; and a non-magnetic layer having a film thickness of 2 nm or below, the non-magnetic layer being provided at one of the lamination positions between the spin orbit layer and the insulator layer.

The invention belongs to the technical field of storage and provides a chip which comprises a basic storage unit, wherein the basic storage unit is a resistance-variable storage device which comprises a conductive doped oxide substrate; a metal electrode made of a first metal material and a second metal material is respectively arranged at two opposite sides of the doped oxide substrate to form a first metal electrode / doped oxide substrate / second metal electrode structure; and the first metal electrode and the second metal electrode form a contact barrier with the doped oxide substrate. The invention further provides a preparation method of the chip. The capacity of the chip provided by the invention is greatly improved while the write-in current of the device is reduced, thereby reducing the chip consumption.

A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side. The semiconductor memory device allows written current to be minimized without degrading of magnetoresistance (MR) and\or thermal stability.

The invention discloses a storage element and a storage device, wherein the storage element includes a layer structure, and the layer structure includes: a storage layer, which has magnetization perpendicular to the film surface, and whose magnetization direction changes corresponding to information; a magnetization fixed layer, which has magnetization perpendicular to the film surface; and an insulating layer disposed between the storage layer and the fixed magnetization layer. Spin-polarized electrons are injected in the lamination direction of the layer structure, so that the magnetization direction of the storage layer is changed, and information recording is performed on the storage layer, the magnitude of the effective diamagnetic field received by the storage layer is smaller than the saturation magnetization of the storage layer, Also, the storage layer and the fixed magnetization layer have film thicknesses such that the interface magnetic anisotropy energy becomes larger than the diamagnetic field energy.

The invention discloses a two-dimensional material phase-change storage unit, which includes a substrate, a lower electrode, a phase-change layer, an upper electrode, and a two-dimensional material layer arranged sequentially above the substrate from bottom to top, and the two-dimensional material layer is arranged The contact surface between the phase change layer and the lower electrode is also arranged on the contact surface between the phase change layer and the upper electrode. The two-dimensional material used in the present invention has a very small thermal conductivity. In addition to the thermal resistance formed by the interface, it can also reduce the loss of heat, reduce the writing current, and improve the electrothermal efficiency; the two-dimensional material layer also has a good Excellent mechanical properties, such as high modulus of elasticity, high compressive strength and breaking strength, etc., can play a buffer role. During the phase change process, the thermal expansion and extrusion stress and strain of the phase change layer are smaller, so it can effectively reduce The stress and strain between the phase change layer and the electrode layer during the temperature rise of the small phase change can improve the life of the device and the number of times of erasing and writing.

In one embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path (102) coupled to the MTJ structure and a write path (104) coupled to the MTJ structure. The write path (104) is separate from the read path (102). The device essentially includes a pair of serially coupled MTJ structures (106, 108), whereby the read path (102) includes only one of the MTJ structures (108). This provides combined improved read margin and improved write margin.

The present invention relates to memory elements and memory devices. The memory element includes: a memory layer having magnetization perpendicular to a film surface whose direction of magnetization changes according to information; a magnetization fixed layer having a magnetization perpendicular to the film surface serving as a reference for information stored in the memory layer. magnetization; and an insulating layer of a non-magnetic substance, the insulating layer being disposed between the storage layer and the magnetization fixed layer. In the above memory element, the magnetization of the storage layer is reversed using spin torque magnetization reversal to store information, and the spin torque magnetization reversal is generated by a current flowing in the lamination direction of the layer structure including the memory layer, an insulating layer, and a magnetization fixed layer, the storage layer has a layer directly on the side opposite to the insulating layer, and the layer includes a conductive oxide.

The present invention relates to a magnetic memory that can prevent wrong writing and can reduce the writing current. Each of the multiple storage areas 3 of the magnetic memory 1 has: a first magnetic memory whose magnetization direction A changes due to an external magnetic field. The TMR element 4 of the layer 41; the write wiring 31 that provides an external magnetic field to the first magnetic layer 41 by a write current; is made of an approximately ring-shaped body with an intervening gap and a pair of opposite end faces 5a to surround the write The yoke 5 arranged around the wiring 31; and the write transistor 32 that controls conduction of the write current. Furthermore, the TMR element 4 is arranged such that the pair of side surfaces 4 a face the pair of end surfaces 5 a of the yoke 5 , respectively. With this configuration, a magnetic field based on a write current can be efficiently supplied to the TMR element 4 , so that the magnetization direction A of the first magnetic layer 41 can be reversed even with a small write current.

The present invention provides a memory element and a memory device. The memory element includes a layered structure and a layer of negative thermal expansion material. The layered structure includes a storage layer, a magnetization fixed layer, and an intermediate layer. The storage layer has magnetization perpendicular to the film plane in which the direction of magnetization changes according to information, and includes a magnetic layer having a positive magnetostriction constant. The direction of magnetization is changed by applying a current along the stacking direction of the layered structure to record information in the storage layer. The magnetization fixed layer has magnetization perpendicular to the film surface, and becomes the basis of information stored in the storage layer. The intermediate layer is formed of a non-magnetic material, and is provided between the storage layer and the magnetization fixed layer.

The invention provides a magnetic random access memory and a preparation method thereof. The magnetic random access memory comprises a magnetic tunnel junction structure; the word line is connected with the top of the magnetic tunnel junction structure; a read bit line in contact with the bottom of the magnetic tunnel junction structure; the write-in bit line is positioned on the second side of the magnetic tunnel junction structure and is spaced from the read bit line and the word line; the U-shaped variable magnet connecting structure comprises a bottom edge part and a side wall part; the bottom edge part is positioned below the reading bit line and stretches across the reading bit line along a first direction; the top of the side wall portion located on the first side of the magnetic tunnel junction structure is connected with the word line, the top of the side wall portion located on the second side of the magnetic tunnel junction structure is connected with the write-in bit line,and the bottom of the side wall portion is connected with the bottom edge portion. According to the invention, the U-shaped variable magnet connecting structure is arranged, and the magnetic field generated by the current flowing through the U-shaped variable magnet connecting structure assists the overturning of the magnetic tunnel junction structure, so that the current required by the overturning of the magnetic tunnel junction structure is reduced, and the required write-in current is further reduced.

The invention discloses a storage element and a storage device. The storage element has a stacked structure including: a storage layer having magnetization perpendicular to the film surface and whose magnetization direction changes depending on information, and including a Co-Fe-B magnetic layer whose magnetization direction is applied by applying The current is changed to record information in the storage layer, the magnetization fixed layer has magnetization perpendicular to the film surface that becomes the reference of the information stored in the storage layer, and the intermediate layer is formed of a non-magnetic material and is provided in Between the storage layer and the fixed magnetization layer; the first oxide layer and the second oxide layer.

A non-volatile memory element includes a recording layer that includes a phase change material, a lower electrode provided in contact with the recording layer, an upper electrode provided in contact with a portion of the upper surface of the recording layer, a protective insulation film provided in contact with the other portion of the upper surface of the recording layer, and an interlayer insulation film provided on the protective insulation film. High thermal efficiency can thereby be obtained because the size of the area of contact between the recording layer and the upper electrode is reduced. Providing the protective insulation film between the interlayer insulation film and the upper surface of the recording layer makes it possible to reduce damage sustained by the recording layer during patterning of the recording layer or during formation of the through-hole for exposing a portion of the recording layer.

An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

The invention discloses a storage element and a storage device, wherein the storage element includes a layer structure, and the layer structure includes: a storage layer having a magnetization perpendicular to the film surface; a magnetization fixed layer; and an insulating layer arranged between the storage layer and the magnetization fixed between layers. Spin-polarized electrons are injected in the lamination direction of the layer structure, and the size of the effective diamagnetic field received by the storage layer is smaller than the saturation magnetization of the storage layer, with regard to the insulating layer in contact with the storage layer and on the opposite side of the insulating layer with The other layer in contact with the storage layer, at least the interface with the storage layer is made of an oxide film, and in addition to the Co-Fe-B magnetic layer, the storage layer also includes at least one of a non-magnetic metal and an oxide.

The invention discloses a memory element and a memory device, wherein the memory element includes a layer structure. The layer structure includes: a storage layer with magnetization perpendicular to the film surface; a fixed magnetization layer with magnetization perpendicular to the film surface; an insulating layer arranged between the storage layer and the fixed magnetization layer; and a cover layer arranged on the storage layer The side of the side opposite to the side of the insulating layer side, in which spin-polarized electrons are injected in the lamination direction of the layer structure, so that the magnetization direction of the storage layer is changed, and information recording is performed, the effective feedback received by the storage layer The magnitude of the magnetic field is smaller than the saturation magnetization of the storage layer, and at least the surface of the cap layer that is in contact with the storage layer is made of a Ta film.