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Storage Elements and Storage Devices

A storage element and storage layer technology, applied in the direction of electrical components, information storage, static memory, etc., can solve the problems of power consumption reduction, capacity increase, etc., and achieve the effect of reducing power consumption, reducing power consumption, and improving reliability

Inactive Publication Date: 2016-08-24
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Due to high-speed operation and reliability, MRAM is expected to be used also for code storage and working memory applications; however, in practice, reduction in power consumption and increase in capacity are issues to be overcome

Method used

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Examples

Experimental program
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Embodiment Construction

[0064] Hereinafter, embodiments of the present invention (hereinafter referred to as "embodiments") will be described.

[0065] Description will be made in the following order.

[0066]

[0067]

[0068]

[0069]

[0070]

[0071] First, an overview of a memory element according to an embodiment of the present invention will be described.

[0072] According to an embodiment of the present invention, by the above spin torque magnetization reversal, the magnetization direction of the storage layer of the storage element is reversed to record information.

[0073] The storage layer is a ferromagnetic layer formed of a magnetic substance, and stores information by the magnetization state (magnetization direction) of the magnetic substance.

[0074] Although it will be described in detail later, the memory element according to the embodiment has, for example, figure 2 The layer structure shown in and has at least two ferromagnetic layers, namely, a storage layer 17 and...

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PUM

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Abstract

The present invention relates to memory elements and memory devices. The memory element includes: a memory layer having magnetization perpendicular to a film surface whose direction of magnetization changes according to information; a magnetization fixed layer having a magnetization perpendicular to the film surface serving as a reference for information stored in the memory layer. magnetization; and an insulating layer of a non-magnetic substance, the insulating layer being disposed between the storage layer and the magnetization fixed layer. In the above memory element, the magnetization of the storage layer is reversed using spin torque magnetization reversal to store information, and the spin torque magnetization reversal is generated by a current flowing in the lamination direction of the layer structure including the memory layer, an insulating layer, and a magnetization fixed layer, the storage layer has a layer directly on the side opposite to the insulating layer, and the layer includes a conductive oxide.

Description

technical field [0001] The present invention relates to a memory element having a plurality of magnetic layers and performing recording using spin torque magnetization reversal, and to a memory device. Background technique [0002] Accompanying the remarkable development of various types of information devices ranging from mobile terminals to large-scale servers, performance aspects (for example, increased integration, increased operating speed, and functional Consumption reduction) further improved. In particular, the development of semiconductor nonvolatile memories is remarkable, and flash memories each used as large-scale file storage are increasingly developed so as to drive hard disk drives out of the market. [0003] In addition, development of ferroelectric random access memory (FeRAM), magnetic random access memory (MRAM), phase change random access memory (PCRAM), etc. Other applications for code storage applications and working memory. Some of these memories me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/02G11C11/15
CPCG11C11/161H10B61/00H10N50/01H10N50/10
Inventor 别所和宏细见政功大森广之肥后丰山根一阳内田裕行浅山彻哉
Owner SONY CORP
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