Storage element and storage device

A technology for storage elements and storage layers, which is applied in the field of storage devices and storage elements, and achieves the effects of good stability, reduced write current, and reduced power consumption

Inactive Publication Date: 2012-11-07
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although it is expected to develop into code storage memory or work memory in the future due to its high-speed operation and reliability, MRAM actually has problems in realizing low power consumption and large capacity

Method used

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  • Storage element and storage device
  • Storage element and storage device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0024] Hereinafter, the present invention will be described according to embodiments in the following order.

[0025] 1. Configuration of Storage Device According to Embodiment

[0026] 2. Outline of the storage element according to the embodiment

[0027] 3. The specific structure of the embodiment

[0028] 4. Experiments on Embodiments

[0029] 1. Configuration of Storage Device According to Embodiment

[0030] First, the configuration of a storage device according to an embodiment of the present invention will be described.

[0031] figure 1 with figure 2 A storage device according to an embodiment is schematically shown. figure 1 is a perspective view and figure 2 is a cross-sectional view.

[0032] Such as figure 1 As shown, in the memory device according to the embodiment, a memory element 3 configured by ST-MRAM and capable of storing information based on a magnetization state is provided between two types of address wirings (for example, word lines and bit l...

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PUM

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Abstract

The present invention relates to a storage element and a storage device. The storage element includes a storage layer that stores information on the basis of a magnetization state of a magnetic material; a fixed magnetization layer that has a magnetization serving as a reference of the information stored in the storage layer; an interlayer that is formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a cap layer that is provided to be adjacent to the storage layer and opposite to the interlayer; and a metal cap layer that is provided to be adjacent to the cap layer and opposite to the storage layer.

Description

technical field [0001] The present invention relates to a memory element and a memory device including the same. The memory element includes a memory layer storing the magnetization state of the ferromagnetic layer as information and a magnetization fixed layer whose magnetization direction is fixed, and the magnetization direction of the memory layer is changed by the flow of current. Background technique [0002] With the rapid development of various information devices (from mobile terminals to large-capacity servers), memory and logic elements constituting the information devices require higher performance, such as high integration, high speed, and low power consumption. In particular, the development of semiconductor nonvolatile memory is remarkable, and flash memory is becoming more widely used as mass storage, as if hard disk drives are almost eliminated from the market. Meanwhile, in anticipation of progress in code storage memory or working memory, FeRAM (Ferroelec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08G11C11/15
CPCG11C11/16H01L43/08H01L27/228H01L43/10G11C11/161H10B61/22H10N50/85H10N50/10
Inventor 别所和宏细见政功大森广之肥后丰山根一阳浅山徹哉内田裕行
Owner SONY CORP
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