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Magnetic memory

A technology of magnetic memory and storage area, which is applied in the direction of static memory, digital memory information, information storage, etc., and can solve problems such as mistakes

Inactive Publication Date: 2006-05-10
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, even in the TMR element 101 other than the TMR element 101 for writing binary data, the magnetic field from the wiring 102 or 104 may be mistaken and the magnetization direction A of the first magnetic layer 101a may be reversed.

Method used

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Embodiment Construction

[0044] Hereinafter, embodiments of the magnetic memory according to the present invention will be described in detail with reference to the drawings. In addition, in the description of the drawings, the same reference numerals are assigned to the same elements, and overlapping descriptions are omitted.

[0045] First, the configuration of an embodiment of the magnetic memory according to the present invention will be described. figure 1 It is a conceptual diagram showing the overall configuration of the magnetic memory 1 of the present embodiment. The magnetic memory 1 includes a storage unit 2 , a bit selection circuit 11 , a word selection circuit 12 , bit lines 13 a and 13 b , a word line 14 , and a ground line 15 . The storage unit 2 is composed of a plurality of storage areas 3 . The plurality of storage areas 3 are arranged in a two-dimensional shape consisting of m rows and n columns (m and n are integers equal to or greater than 2). Each of the plurality of memory ...

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Abstract

The present invention relates to a magnetic memory that can prevent wrong writing and can reduce the writing current. Each of the multiple storage areas 3 of the magnetic memory 1 has: a first magnetic memory whose magnetization direction A changes due to an external magnetic field. The TMR element 4 of the layer 41; the write wiring 31 that provides an external magnetic field to the first magnetic layer 41 by a write current; is made of an approximately ring-shaped body with an intervening gap and a pair of opposite end faces 5a to surround the write The yoke 5 arranged around the wiring 31; and the write transistor 32 that controls conduction of the write current. Furthermore, the TMR element 4 is arranged such that the pair of side surfaces 4 a face the pair of end surfaces 5 a of the yoke 5 , respectively. With this configuration, a magnetic field based on a write current can be efficiently supplied to the TMR element 4 , so that the magnetization direction A of the first magnetic layer 41 can be reversed even with a small write current.

Description

[0001] technology area [0002] The invention relates to a magnetic memory which stores data on a magnetoresistance effect element. Background technique [0003] In recent years, MRAM (Magnetic Random Access Memory) has attracted attention as a storage device used in information processing devices such as computers and communication equipment. MRAM stores data through magnetic force, so there is no disadvantage of losing information when the power is cut off like volatile memory DRAM (Dynamic Random Access Memory) or SRAM (Static RAM). Furthermore, compared with the existing non-volatile storage units such as flash EEPROM or hard disk devices, the access speed, reliability, power consumption, etc. are very excellent. Therefore, MRAM has the possibility of completely replacing the functions of volatile memories such as DRAM and SRAM, and the functions of non-volatile storage units such as flash EEPROMs and hard disk devices. Currently, people are rapidly developing an informa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/15H01L27/105H01L43/08
CPCG11C11/16
Inventor 古贺启治江崎城一朗
Owner TDK CORPARATION
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