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Memory element and memory device

A storage element and storage layer technology, applied in information storage, electrical components, static memory, etc., can solve the problems of thinning address wiring and difficulty in flowing current, so as to reduce write current, reduce power consumption, The effect of ensuring thermal stability

Active Publication Date: 2012-04-04
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, with the miniaturization of the elements constituting MRAM, the address wiring becomes thinner, making it difficult to pass a sufficient current

Method used

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  • Memory element and memory device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0071] Hereinafter, embodiments of the present invention will be described in the following order.

[0072] 1. Outline of the memory element of the embodiment

[0073] 2. Structure of Embodiment

[0074] 3. Experiment

[0075] 1. Outline of the memory element of the embodiment

[0076] First, an overview of a memory element according to an embodiment of the present invention will be described.

[0077] According to an embodiment of the present invention, recording of information is performed by reversing the magnetization direction of the storage layer of the storage element using the above-described spin injection.

[0078] The storage layer is composed of a magnetic material such as a ferromagnetic layer, and holds information by the magnetization state (magnetization direction) of the magnetic material.

[0079] Although will be described in detail later, the memory element has the Figure 2A and Figure 2B A layer structure of an example is shown in , and includes a ...

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PUM

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Abstract

The invention discloses a memory element and a memory device. The memory element includes a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co-Fe-B magnetic layer.

Description

technical field [0001] The present invention relates to a memory element including a memory layer storing the magnetization state of a ferromagnetic layer as information and a magnetization fixed layer whose magnetization direction is fixed, and changing the magnetization direction of the memory layer by flowing current, and a memory device having the memory element. Background technique [0002] In information equipment such as computers, high-density DRAMs operating at high speeds have been widely used as random access memories. [0003] However, DRAM is a volatile memory whose information is erased when power is turned off, and thus, a nonvolatile memory whose information is not erased is desired. [0004] In addition, as a candidate of a nonvolatile memory, a magnetic random access memory (MRAM) in which information is recorded by magnetization of a magnetic material has attracted much attention, and thus has been developed. [0005] The MRAM causes current to flow resp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16H01L43/08H10N50/10
CPCG11C11/16H01F10/32H01L27/228B82Y25/00H01F10/329H01L43/10H01F10/3254H01L43/08H01F10/3286G11C11/161H10B61/22H10N50/85H10N50/10
Inventor 山根一阳细见政功大森广之别所和宏肥后丰内田裕行
Owner SONY CORP
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