Memory device and memory
A storage element and storage layer technology, applied in static memory, digital memory information, electrical components, etc., can solve problems such as writing errors and inability to ensure thermal stability of the storage layer, and achieve reliable memory, good balance characteristics, and reduced power consumption Effect
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[0169] Here, a memory element having a configuration of a memory element according to an embodiment of the present invention was prepared as a sample. That is, the memory element is prepared by adjusting the level of the effective demagnetization field to which the memory layer is subjected. This adjustment is made by specifically selecting the material of the ferromagnetic layer constituting the storage layer or of a layer adjacent to the storage layer. Then, study the characteristics of the memory element.
[0170] Such as Figure 4 As shown, the actual configuration of the memory includes, in addition to the memory element, a semiconductor circuit for performing conversion, and the like. Here, in order to study the characteristics of reversing the magnetization direction of the memory layer, a study was conducted on a wafer on which only one memory element was formed.
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