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Storage unit and memory with same

A technology of storage unit and memory, which is applied in the direction of magnetic field controlled resistors and parts of electromagnetic equipment, etc. It can solve the problems of STT-MRAM performance write symmetry, device uniformity write power consumption, etc., and achieve enhanced polarization Effects of efficiency, reduction of magnetic interaction, and increase in planar size

Pending Publication Date: 2019-03-15
CETHIK GRP
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  • Application Information

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Problems solved by technology

However, in this design, the magnetic stray field (stray field) from the polarizer will act on the free layer, thereby affecting the performance of STT-MRAM (such as write symmetry, device uniformity and write power consumption) etc.) to affect

Method used

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  • Storage unit and memory with same
  • Storage unit and memory with same

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Embodiment Construction

[0027] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0028] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0029] It should be noted that the terms "first...

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Abstract

The invention provides a storage unit and a memory with the same. The storage unit comprises a first MTJ and a second MTJ; the first MTJ comprises a polarization layer; any cross section in a height direction of the first MTJ has a first surface area; the second MTJ comprises a reference layer; the first MTJ and the second MTJ share a free layer; any cross section in a height direction of the second MTJ has a second surface area; and the first surface area is greater than the second surface area. When a certain amount of current passes through the second MTJ, a magnetization direction of the free layer is turned over through a magnetic rotation transfer moment effect; when the magnetization directions of the reference layer and the free layer are parallel or anti-parallel, the resistance of the second MTJ is in a low or high-resistance state; and the polarization layer and the free layer are isolated through a first nonmagnetic layer, and the magnetization directions of the polarization layer and the free layer are perpendicular. Due to the adoption of a novel device structure, a writing current of the magnetic rotation memory can be effectively reduced, the writing speed of the magnetic rotation memory can be increased, and the like.

Description

technical field [0001] The present application relates to the technical field of data storage, in particular, to a storage unit and a memory having the same. Background technique [0002] Magnetic Random Access Memory (MRAM) is considered to be the most widely used "general-purpose" processor in the future due to its advantages of fast read and write speed, long life, and non-volatility. Its core working unit is a magnetic tunnel junction (MTJ) composed of a "magnetic reference layer / isolation layer / magnetic free layer" sandwich structure. [0003] The first generation of MRAM mainly relies on the Oersted magnetic field generated by the word line and the bit line to realize the writing process, but it needs to pass a large enough current to generate a strong enough magnetic field to realize the reversal of the free layer magnetic moment. This process will consume a lot of energy, and at the same time, the error rate of writing information is very high, and the requirements ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/02H10N50/10H10N50/80
CPCH10N50/80H10N50/10
Inventor 刘瑞盛杨成成
Owner CETHIK GRP
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