Multilayer substrate integrated waveguide dual-pass band filter

Abstract

The invention provides a multilayer substrate integrated waveguide dual-pass band filter, a vertical coupling structure of two-mode resonator is adopted, two passbands are generated by using the resonator's multi-resonant mode characteristics, and each resonant mode is coupled independently by using the orthogonality between different resonant cavities of the SIW resonator. The central frequenciesof the two passbands are adjusted by adjusting the size of the resonator, and the bandwidths of the two passbands are adjusted by adjusting the mixed coupling mode between the resonant modes. As theinvention adopts vertical coupling, the electric coupling, the magnetic coupling or the hybrid coupling between resonant modes can be designed independently by utilizing the orthogonality between different modes, so as to bring greater freedom to the design of the filter. The invention adopts vertical hybrid coupling of the resonant modes to improve the selectivity of the filter.

Description

technical field [0001] The invention relates to the waveguide field, in particular to a multi-layer substrate integrated waveguide double-passband filter. Background technique [0002] With the development of modern wireless communication systems towards high integration and multi-mode communication, the filters in the system are required to have characteristics such as multi-passband, high out-of-band rejection, and compact size. Substrate integrated waveguide (SIW) ) provides an effective solution for the design of microwave and millimeter wave circuits and systems because it can take into account the advantages of compactness, easy integration, and easy processing of the microstrip structure and the low insertion loss and high Q value of the waveguide. At the same time, with the development of modern wireless communication systems towards high integration, high reliability and multi-mode communication, SIW dual-band filters are widely used in current wireless communicatio...

AI Technical Summary

Problems solved by technology

Two passbands are realized by planar coupling between layers. First, the two orthogonal mode TEs in the SIW resonator are excited by the microstrip unbalanced feeding method. 102 and TE 201 mode, the two resonant modes are coupled through the coupling window to generate the first and second passbands respectively, but other spurious modes will also be coupled through the same coupling window, which will inevitably bring about a parasitic passband

In addition, since the two resonant modes forming the passband are coupled through the same window, the coupling coefficient cannot be adjusted independently, so the bandwidth of the two passbands cannot be independently controlled

At the same time, the physical size of the planar coupling structure is relatively large, which increases the processing cost and system volume

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