Storage device amd method for forming storage
A memory and storage line technology, applied in static memory, digital memory information, manufacturing/processing of electromagnetic devices, etc., to achieve the effects of reduced write current, reduced distance, and reduced cross-interference
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0029] In order to make the above objects, features and advantages of the present invention more comprehensible, a preferred embodiment will be described in detail below together with the accompanying drawings.
[0030] Figure 4 Shown is a cross-sectional view of an early stage of a process. Such as Figure 4 As shown, the device includes a substrate 110 having a dielectric layer 112 formed thereon, a series of conductive lines 114 - 117 , an insulating layer (spacer layer) 122 , an electrode layer 124 and a magnetoresistive layer 126 .
[0031] The substrate 110 may be a semiconductor substrate, such as a P-type silicon wafer with a lattice surface . The substrate 110 also includes any other suitable semiconductor material, such as gallium arsenide (GaAs), indium phosphide (InP), silicon carbide (SiC) or silicon / germanium (Si / Ge). The substrate 110 also includes active devices or circuits formed in front-end-of-line (FEOL), not shown here.
[0032] In one embodiment, the...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com