Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Storage device amd method for forming storage

A memory and storage line technology, applied in static memory, digital memory information, manufacturing/processing of electromagnetic devices, etc., to achieve the effects of reduced write current, reduced distance, and reduced cross-interference

Active Publication Date: 2006-09-06
TAIWAN SEMICON MFG CO LTD
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But since the top write line is used to generate a magnetic field to write to the MTJ, this write line needs to be close to the MTJ

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Storage device amd method for forming storage
  • Storage device amd method for forming storage
  • Storage device amd method for forming storage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to make the above objects, features and advantages of the present invention more comprehensible, a preferred embodiment will be described in detail below together with the accompanying drawings.

[0030] Figure 4 Shown is a cross-sectional view of an early stage of a process. Such as Figure 4 As shown, the device includes a substrate 110 having a dielectric layer 112 formed thereon, a series of conductive lines 114 - 117 , an insulating layer (spacer layer) 122 , an electrode layer 124 and a magnetoresistive layer 126 .

[0031] The substrate 110 may be a semiconductor substrate, such as a P-type silicon wafer with a lattice surface . The substrate 110 also includes any other suitable semiconductor material, such as gallium arsenide (GaAs), indium phosphide (InP), silicon carbide (SiC) or silicon / germanium (Si / Ge). The substrate 110 also includes active devices or circuits formed in front-end-of-line (FEOL), not shown here.

[0032] In one embodiment, the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

Description

technical field [0001] The present invention relates to a semiconductor storage device; especially a semiconductor storage device using a magnetoresistive structure to store data. Background technique [0002] Magnetic random access memory (MRAM) is a type of non-volatile memory that uses magnetism instead of electricity to store data. figure 1 is a partial schematic diagram showing a MRAM array 10 . The MRAM array 10 includes a plurality of memory cells 12-19, and a series of wires 40-48. Each memory cell 12-19 includes a magnetoresistive (MR) memory element 20-27 and a transistor 30-37. figure 1 The structure shown is also referred to as a 1T1MTJ (one transistor, one MTJ) structure. [0003] Such as figure 1 As shown, the transistors 30-33 are coupled to each other through a word line WL140, and the transistors 34-37 are coupled to each other through a word line WL241, wherein the word lines 40 and 41 form the gates of the transistors 30-37. The transistors 34-37 are ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/82H01L27/22H01L43/00G11C11/02
CPCH01L27/228H01L43/12H10B61/22H10N50/01
Inventor 刘源鸿吴志达赵兰璘杜友伦林文钦蔡嘉雄
Owner TAIWAN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products