Magnetic random access memory and preparation method thereof

Abstract

The invention provides a magnetic random access memory and a preparation method thereof. The magnetic random access memory comprises a magnetic tunnel junction structure; the word line is connected with the top of the magnetic tunnel junction structure; a read bit line in contact with the bottom of the magnetic tunnel junction structure; the write-in bit line is positioned on the second side of the magnetic tunnel junction structure and is spaced from the read bit line and the word line; the U-shaped variable magnet connecting structure comprises a bottom edge part and a side wall part; the bottom edge part is positioned below the reading bit line and stretches across the reading bit line along a first direction; the top of the side wall portion located on the first side of the magnetic tunnel junction structure is connected with the word line, the top of the side wall portion located on the second side of the magnetic tunnel junction structure is connected with the write-in bit line,and the bottom of the side wall portion is connected with the bottom edge portion. According to the invention, the U-shaped variable magnet connecting structure is arranged, and the magnetic field generated by the current flowing through the U-shaped variable magnet connecting structure assists the overturning of the magnetic tunnel junction structure, so that the current required by the overturning of the magnetic tunnel junction structure is reduced, and the required write-in current is further reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor storage structures, in particular to a magnetic random access memory and a preparation method thereof. Background technique [0002] The existing magnetic random access memory includes several magnetic tunnel junction structures (MTJ) as memory cells, and the magnetic state of the free ferromagnetic layer in the magnetic tunnel junction structure can depend on the current of the word line and bit line connected to it induced magnetic field. The existing magnetic random access memory has the problem that the current required for the reversal of the magnetic tunnel junction structure is relatively large, resulting in a relatively large writing current; and if the current required for the reversal of the magnetic tunnel junction structure is reduced, it is necessary to The size of the magnetic tunnel junction structure is made larger, which is not conducive to the development of device miniatu...

AI Technical Summary

Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a magnetic random access memory and its preparation method, which is used to solve the problem of magnetic tunnel junction structure reversal in the magnetic random access memory in the prior art. The current is large, which leads to the problem that the required write current is large, and in order to reduce the current required for the reversal of the magnetic tunnel junction structure, the size of the magnetic tunnel junction structure needs to be made larger, which is not conducive to the development of device miniaturization. question

Images