32results about How to "Improve infrared absorption" patented technology

The invention provides an infrared detector of a microbridge structure and a method for manufacturing the infrared detector of the microbridge structure. The detector comprises a reading circuit substrate, a microbridge leg, a heat sensitive layer, an infrared reflection layer and an infrared absorption layer. The infrared absorption layer is supported by and arranged above the heat sensitive layer, a resonant cavity for incoming infrared light is formed by the infrared absorption layer and the infrared reflection layer, and the microbridge leg is arranged below the infrared reflection layer and electrically connected with the reading circuit substrate. Through the structure, the infrared absorptivity of the device can be improved while thermal conductance of the device can be reduced, the filling rate of the device is improved, the defects of the resonant cavity are overcome, and thus the thermal isolation effect and the responsivity of the device are improved and the performance of the device is optimized.

The present invention proposes a self-cleaning nano heat-insulating coating based on cesium tungsten bronze and a preparation method thereof; the preparation method includes: step S1: using WCl 6 and CsOH·5H 2 O as a raw material, with PVP as a surfactant, and acetic acid as an acid catalyst, the nano-cesium tungsten bronze particles were prepared by a hydrothermal method; step S2: using TiCl 4 Preparation of nano TiO 2 Particles; step S3: the nano-cesium tungsten bronze particles, nano-TiO 2 Particles, silane coupling agent and water are ball milled and dispersed together to prepare cesium tungsten bronze / TiO 2 Composite particle aqueous slurry; retuned cesium tungsten bronze / TiO 2 Concentration of composite particle aqueous slurry to obtain self-cleaning nano thermal insulation coating. The self-cleaning nano heat-insulating coating and the preparation method thereof of the present invention are simple and practical, have good heat-insulating effect and good self-cleaning effect.

The invention discloses a high-performance CMOS infrared micro bolometer based on surface electromagnetic wave resonance. The micro bolometer comprises an L-shaped micro bridge structure. The micro bridge structure comprises bridge piers, bridge arms and an infrared absorbing member. The infrared absorbing member has a multilayer structure which is composed of a silicon nitride layer, a metal grating layer, a silicon dioxide layer, a zigzag aluminum heat-sensitive resistor layer and a silicon dioxide layer, wherein the silicon nitride layer, the metal grating layer, the silicon dioxide layer,the zigzag aluminum heat-sensitive resistor layer and the silicon dioxide layer are successively arranged from top to bottom. Compared with a traditional micro bolometer structure, the micro bolometerstructure is advantageous in that the metal grating is added above the heat-sensitive resistor layer, thereby forming an MIM structure. The CMOS infrared micro bolometer utilizes a surface electromagnetic wave for exciting resonance, thereby remarkably improving infrared absorbility of a detector, improving detector response and realizing high-efficiency detection. Furthermore the micro bolometeraccording to the invention is based on a standard CMOS integrated circuit process and has advantages of easy process realization, low cost, etc.

The invention provides an infrared thermal storage functional fiber masterbatch and a preparation method thereof, which comprises the following components calculated by weight percentage: concentrated rare earth material 1wt%-30wt%, polymer material 70wt%-99wt%. The concentrated rare earth material provided by the invention can be mixed with different polymer materials in proportion to make a masterbatch, which can prepare a variety of fibers and can be used to weave infrared heat storage functional fabrics. The advantages of environmental protection and low cost.

The invention discloses an infrared absorption film and a preparation method thereof, belongs to the technical field of microelectronic manufacturing, and solves the problems in the prior art that theinfrared absorption film has high absorption capacity only in a very narrow short-wave range, expensive preparation equipment and poor compatibility of micro-processing processes. The preparation method comprises the following steps: forming a sensitive layer; forming an absorption passivation layer and a pattern transfer layer on the sensitive layer in turn; forming a nanostructure on the side of the pattern transfer layer away from the absorption passivation layer by the first plasma etching; and transferring the nanostructure of the pattern transfer layer to the absorption passivation layer by the second plasma etching. The infrared absorption film comprises the sensitive layer and the absorption passivation layer which are laminated, wherein the nanostructure is formed on the side ofthe absorption passivation layer away from the sensitive layer. The infrared absorption film and the preparation method thereof can be used for infrared devices.

The invention provides infrared curing powder paint and a preparation method thereof. The infrared curing powder paint comprises, by weight, 50 parts of matrix resin, 12-50 parts of a curing agent, 0.5-5 parts of aliphatic binary acid, 0.5-5 parts of hydroxyl functional hyperbranched resin and 0.5-5 parts of a nano filler. The infrared curing powder paint is prepared by mixing the components, extruding the components by an extruder and tabletting and crushing the components. The infrared curing powder paint has a relatively high infrared absorption rate and is high in curing speed, a coating formed after curing has relatively high crosslinking density, hardness, toughness, adhesive force, solvent resistance, acid and alkali resistance and moisture and heat resistance, and the paint is suitable for coating of heat-sensitive base materials such as wood, engineering plastics, glass and paper.

The invention discloses a preparation method of a flexible low working voltage polyaniline electrovariable emissivity film, which relates to a preparation method of an electrovariable emissivity film. The purpose of the present invention is to solve the problems that the existing electrovariable emissivity materials are inflexible, the preparation process is complicated, the cost is high and the driving voltage is high. Methods: 1. Preparation of polymer solution; 2. Electrochemical deposition to obtain flexible and low working voltage polyaniline electrovariable emissivity film. The flexible low working voltage polyaniline electrovariable emissivity film prepared by the present invention has high infrared control ability, good cycle stability, and can meet the demand for photothermal intelligent control; the flexible low working voltage polyaniline film prepared by the present invention The response time of the aniline electrovariable emissivity film is 10s-20s. The invention can obtain a flexible and low working voltage polyaniline electrovariable emissivity film.

A method for reversible capture and release of carbon dioxide comprises the steps of providing a solution of a defined tetranuclear complex or mixture thereof, in which adsorption sites are provided by coordinated solvent molecules such as water molecules. The solution is exposed to the atmosphere or to a gas stream containing carbon dioxide to sequester carbon dioxide, and the pH of the resultant reaction mixture is adjusted to facilitate the release of carbon dioxide. The solution which is used to sequester carbon dioxide is a solution of a polynuclear transition metal compound having the formula: (I) and the tetranuclear transition metal compound that has sequestered carbon dioxide is of the formula: (II).

The invention relates to a liquid crystal box for an infrared thermal imaging detector. In the infrared thermal imaging detector based on a liquid crystal rotation effect, infrared absorption rate of liquid crystal per se is low and the liquid crystal is difficult to use as an infrared sensitive material. The liquid crystal box for the infrared thermal imaging detector comprises an upper substrate, a lower substrate, orientation layers, a liquid crystal layer and sealing rings, wherein the orientation layers are arranged at the inner sides of the substrates, the liquid crystal layer is sandwiched between the orientation layers, the upper substrate transmits infrared light and visible light, and another substrate transmits the visible light; the orientation layers are made of an infrared light and visible light transmitting polymer material, parallel grooves are respectively and uniformly formed at one side of each of the two orientation layers, which faces the liquid crystal layer, and are perpendicular to one another, and infrared absorption layers are plated on the orientation layers by using a thin film deposition manner, and are made of a material which has better absorption characteristic on middle and far infrared rays. By adopting the liquid crystal box, the infrared absorption rate of a thin film is improved, the transformation efficiency of infrared absorption is improved, and the sensitivity of infrared detection is improved.

The invention relates to a pyroelectric relaxation single-crystal ultra-thin sensitive chip and a preparation method thereof. The preparation method comprises: grinding and chemical-mechanical polishing the front and back of the single-chip, and then performing the grinding and chemical-mechanical polishing on the The front and back of the single wafer are vacuum-deposited with a metal film layer; a blackened product is prepared, the blackened product is sprayed on the back of the single wafer after coating, and a mask blackened layer is formed on the back of the single wafer. The preparation method of a pyroelectric relaxation single crystal ultra-thin sensitive chip of the present invention adopts the new chemical mechanical grinding and polishing technology, the vacuum evaporation metal film layer and the ultrasonic spraying polymer mask blackening layer technology, to achieve The effective thinning of large-size pyroelectric single crystal materials ensures the firmness of the metal coating layer, as well as the uniformity, high adhesion and high infrared absorption rate of the blackened absorbing layer. Pyroelectric relaxor ferroelectric single crystal sensitive chip provides a new direction.