32results about How to "Improve infrared absorption" patented technology

The invention provides an infrared detector of a microbridge structure and a method for manufacturing the infrared detector of the microbridge structure. The detector comprises a reading circuit substrate, a microbridge leg, a heat sensitive layer, an infrared reflection layer and an infrared absorption layer. The infrared absorption layer is supported by and arranged above the heat sensitive layer, a resonant cavity for incoming infrared light is formed by the infrared absorption layer and the infrared reflection layer, and the microbridge leg is arranged below the infrared reflection layer and electrically connected with the reading circuit substrate. Through the structure, the infrared absorptivity of the device can be improved while thermal conductance of the device can be reduced, the filling rate of the device is improved, the defects of the resonant cavity are overcome, and thus the thermal isolation effect and the responsivity of the device are improved and the performance of the device is optimized.

The invention, which belongs to the technical field of the non-refrigerated infrared detection, relates to a non-refrigerated infrared detection focal plane device. The device comprises a substrate structure, a support structure, and a bridge deck structure. The bridge deck structure is supported on a substrate by bridge legs and bridge piers, an infrared resonant cavity is formed between an infrared absorbed layer film and a reflecting layer. And a thermo-sensitive layer film is on a surface of the infrared absorbed layer film outside the infrared resonant cavity. According to the invention, a customary thinking employed in the invention of a present device structure is broken through; a position relation of the infrared absorbed layer film and the thermo-sensitive layer film within the bridge deck structure is inversed, so that the thermo-sensitive layer film is arranged on the surface of the infrared absorbed layer film outside the infrared resonant cavity, and thus an infrared absorptivity of the infrared detection focal plane device is increased; and therefore, a detection efficiency of the non-refrigerated infrared detection focal plane device is further improved. Furthermore, an anti-reflection film is not required by the device, so that the device structure is simplified to some extent and device cost is also reduced appropriately.

The invention provides infrared curing powder paint and a preparation method thereof. The infrared curing powder paint comprises, by weight, 50 parts of matrix resin, 12-50 parts of a curing agent, 0.5-5 parts of aliphatic binary acid, 0.5-5 parts of hydroxyl functional hyperbranched resin and 0.5-5 parts of a nano filler. The infrared curing powder paint is prepared by mixing the components, extruding the components by an extruder and tabletting and crushing the components. The infrared curing powder paint has a relatively high infrared absorption rate and is high in curing speed, a coating formed after curing has relatively high crosslinking density, hardness, toughness, adhesive force, solvent resistance, acid and alkali resistance and moisture and heat resistance, and the paint is suitable for coating of heat-sensitive base materials such as wood, engineering plastics, glass and paper.

The invention relates to a preparation method of an electrochromic emissivity film, in particular to a preparation method of a flexible low-working voltage polyaniline electrochromic emissivity film,and aims to solve the problems that an existing electrochromic emissivity material is inflexible, complex in preparation process, high in cost and high in driving voltage. The preparation method comprises the steps of 1, preparing a polymer solution; and 2, performing electrochemical deposition to obtain the flexible low-working voltage polyaniline electrochromic emissivity film. According to thepreparation method, the prepared flexible low-working voltage polyaniline electrochromic emissivity film has higher infrared regulation and control capability, is good in cycle stability, and can meetthe requirement for intelligent photothermal regulation and control; and the response time of the flexible low-working voltage polyaniline electrochromic emissivity film is 10-20 seconds. The methodcan be used for preparing the flexible low-working voltage polyaniline electrochromic emissivity film.

A method for reversible capture and release of carbon dioxide comprises the steps of providing a solution of a defined tetranuclear complex or mixture thereof, in which absorption sites are provided by coordinated solvent molecules such as water molecules. The solution is exposed to the atmosphere or to a gas stream containing carbon dioxide to sequester carbon dioxide, and the pH of the resultant reaction mixture is adjusted to facilitate the release of carbon dioxide. The solution which is used to sequester carbon dioxide is a solution of a polynuclear transition metal compound having the formula: (I) and the tetranuclear transition metal compound that has sequestered carbon dioxide is of the formula: (II)

The invention relates to a pyroelectric detector based on current type relaxor ferroelectric single crystal. The pyroelectric detector comprises a hollow packaging tube shell, an optical filter, a sensitive element chip Up and a line substrate. The packaging tube shell comprises a tube cap and a base, the optical filter is embedded in a window formed in the upper surface of the tube cap, the lower end of the tube cap is fixedly connected with the base and forms a hollow seal structure with the base, the line substrate is arranged on the base and located in the seal structure, a suspension supporting frame is arranged on the line substrate, and the sensitive element chip Up is arranged on the upper surface of the suspension supporting frame and located under the optical filter; a feedback amplifying circuit is arranged on the line substrate, and the sensitive element chip Up is connected between the two input ends of the feedback amplifying circuit through the suspension supporting frame. The current type circuit is adopted, pyroelectric detector is high in capacity for resisting outside noise interference and capable of fast responding outside infrared radiation, and the time of startup preheating and signal stabilizing is shortened.

Disclosed is a reaction device including: a reactor, a heat insulating container housing the reactor, a pipe penetrating a wall of the insulating container to connect the reactor to an outside of the insulating container, wherein the wall of the heat insulating container includes at least two regions each having a different infrared absorptivity, and the region of the wall of higher infrared absorptivity is disposed on the same plane of the wall where the pipe penetrates. Also disclosed are a fuel cell device and an electronic apparatus using the reaction device.

The invention discloses a high-performance CMOS infrared micro bolometer based on surface electromagnetic wave resonance. The micro bolometer comprises an L-shaped micro bridge structure. The micro bridge structure comprises bridge piers, bridge arms and an infrared absorbing member. The infrared absorbing member has a multilayer structure which is composed of a silicon nitride layer, a metal grating layer, a silicon dioxide layer, a zigzag aluminum heat-sensitive resistor layer and a silicon dioxide layer, wherein the silicon nitride layer, the metal grating layer, the silicon dioxide layer,the zigzag aluminum heat-sensitive resistor layer and the silicon dioxide layer are successively arranged from top to bottom. Compared with a traditional micro bolometer structure, the micro bolometerstructure is advantageous in that the metal grating is added above the heat-sensitive resistor layer, thereby forming an MIM structure. The CMOS infrared micro bolometer utilizes a surface electromagnetic wave for exciting resonance, thereby remarkably improving infrared absorbility of a detector, improving detector response and realizing high-efficiency detection. Furthermore the micro bolometeraccording to the invention is based on a standard CMOS integrated circuit process and has advantages of easy process realization, low cost, etc.

The invention discloses a nano-composite film with an infrared absorption function and a manufacturing method and application thereof. The nano-composite film with the infrared absorption function comprises a porous film and an infrared absorption substance; the porous film is of a communicated three-dimensional mesh structure formed by lap joint of nano-fibers, and has the high capillary acting force, and the infrared absorption substance is at least loaded inside the three-dimensional mesh structure of the porous film. The nano-composite film with the infrared absorption function has the wide infrared absorption waveband and the high infrared absorption rate, meanwhile, the cost is low, the preparation technology is simple, large-scale production is easily achieved, the film can be directly used for light filtering, heat insulation and infrared radiation resistance, the nano-composite film can be stacked with the porous film to form a combined structure, the nano-composite film is used for thermal management or infrared detection resistance, and the application prospect is quite wide.

The invention discloses a non-refrigeration broadband infrared detector. Unit components of the non-refrigeration broadband infrared detector comprise silicon substrates, support layers, metal electrodes, broadband infrared absorption layers, thermal-sensitive layers and a suspension hole, wherein the thermal-sensitive layers are arranged in the middle of the upper parts or the lower parts of the broadband infrared absorption layers; the metal electrodes are arranged on two sides of the thermal-sensitive layers and the upper parts of two ends of the broadband infrared absorption layers; the support layers are arranged at the upper parts of the silicon substrates; the suspension hole is formed between the silicon substrates and the support layers and penetrates through the silicon substrates and the support layers; the broadband infrared absorption layers and the thermal-sensitive layers are arranged above the support layers and completely cover an opening in the upper end of the suspension hole between the support layers. Through the non-refrigeration broadband infrared detector, the broadband infrared absorption layers and the thermal-sensitive layer are combined together to form an infrared sensitive layer; with combination of the infrared sensitive layer and the suspension structure, the performance of the detector can be greatly improved; the problems of complex process, narrow infrared absorption band and low infrared absorption rate of the existing non-refrigeration broadband infrared detector are solved; the infrared detection with non-refrigeration broadband, low cost and high sensitivity is achieved.

The invention provides a graphene oxide assisted infrared thermopile detector. A graphene oxide film is arranged on an infrared absorption layer of the infrared thermopile detector. According to the invention, the graphene oxide film is arranged on the infrared absorption layer of the infrared thermopile detector, and the infrared absorption rate is improved by utilizing the characteristics of low insulation and heat conduction and strong infrared absorption of the graphene oxide film, so that the sensitivity of the infrared thermopile detector is improved. The result of the embodiment shows that compared with an infrared thermopile detector without a graphene oxide film, the infrared absorption capacity of the infrared thermopile detector is improved by 61.1%, and the response rate is improved by 89.9%.

The invention discloses an infrared absorption film and a preparation method thereof, belongs to the technical field of microelectronic manufacturing, and solves the problems in the prior art that theinfrared absorption film has high absorption capacity only in a very narrow short-wave range, expensive preparation equipment and poor compatibility of micro-processing processes. The preparation method comprises the following steps: forming a sensitive layer; forming an absorption passivation layer and a pattern transfer layer on the sensitive layer in turn; forming a nanostructure on the side of the pattern transfer layer away from the absorption passivation layer by the first plasma etching; and transferring the nanostructure of the pattern transfer layer to the absorption passivation layer by the second plasma etching. The infrared absorption film comprises the sensitive layer and the absorption passivation layer which are laminated, wherein the nanostructure is formed on the side ofthe absorption passivation layer away from the sensitive layer. The infrared absorption film and the preparation method thereof can be used for infrared devices.

The invention relates to a method for preparing caesium and antimony co-doped stannic oxide nano powder and a dispersion solution thereof by using an in-situ doped cohydrolysis method. The method comprises the specific operating steps: weighing stannic tetrachloride pentahydrate, trichloroantimony, cesium carbonate and a double component chelating agent and adding the mixture into a hydrochloric acid solution and uniformly stirring the solution; dropwise adding ammonia water into the solution to obtain a precipitate, and stirring the solution to react fully; pouring the precipitate and carrying out vacuum suction filtration, washing the precipitate with deionized water repeatedly, drying the precipitate and grinding the precipitate; sintering the powder in an air atmosphere at a special temperature for a while to obtain the powder which is the caesium and antimony co-doped stannic oxide nano powder; and adding the prepared nano powder into a nano grinding machine, and adding a solventand a dispersing agent and controlling the grinding conditions to prepare the nano dispersion solution finally. The caesium and antimony co-doped stannic oxide nano powder and the dispersion solutionthereof prepared by the method are small in grain size, high in monodispersed degree, high in conducting efficiency and high in infrared absorptivity, so that the using effect of the powder is improved greatly.

The invention provides an infrared heat storage functional fiber and a preparation method thereof, and the infrared heat storage functional fiber comprises the following components in percentage by weight: 1wt%-10wt% of an infrared heat storage rare earth functional material and 90wt%-99wt% of a high polymer material. The infrared heat storage rare earth functional material provided by the invention can be proportionally mixed with different high polymer materials to prepare master batches, can be used for preparing various fibers, can be used for weaving infrared heat storage functional fabrics, and has the advantages of washability, environment friendliness and low cost compared with infrared warm-keeping clothes in the prior art.

The invention relates to an uncooled tuning type infrared detector, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS infrared sensing structure is directly prepared on the CMOS measuring circuit system, and at least one patterned metal interconnection layer is arranged between a reflecting layer and a suspended micro-bridge structure. The patterned metal interconnection layer and the reflecting layer are electrically insulated, and the patterned metal interconnection layer is used for adjusting a resonance mode of the infrared detector. According to the detector, problems of low performance, low pixel scale, low yield, poor consistency and the like of a traditional MEMS process infrared detector are solved, the infrared absorption rate of the infrared detector is effectively improved, the infrared absorption spectrum of the infrared detector is widened, and the infrared absorption spectrum of the infrared detector is increased.

The present invention proposes a self-cleaning nano heat-insulating coating based on cesium tungsten bronze and a preparation method thereof; the preparation method includes: step S1: using WCl 6 and CsOH·5H 2 O as a raw material, with PVP as a surfactant, and acetic acid as an acid catalyst, the nano-cesium tungsten bronze particles were prepared by a hydrothermal method; step S2: using TiCl 4 Preparation of nano TiO 2 Particles; step S3: the nano-cesium tungsten bronze particles, nano-TiO 2 Particles, silane coupling agent and water are ball milled and dispersed together to prepare cesium tungsten bronze / TiO 2 Composite particle aqueous slurry; retuned cesium tungsten bronze / TiO 2 Concentration of composite particle aqueous slurry to obtain self-cleaning nano thermal insulation coating. The self-cleaning nano heat-insulating coating and the preparation method thereof of the present invention are simple and practical, have good heat-insulating effect and good self-cleaning effect.

The invention provides a fiber master batch with an infrared heat storage function and a preparation method of the fiber master batch, and the fiber master batch comprises the following components in percentage by weight: 1-30wt% of a concentrated rare earth material and 70-99wt% of a high polymer material. The concentrated rare earth material provided by the invention can be proportionally mixed with different high polymer materials to prepare master batches, can be used for preparing various fibers, can be used for weaving infrared heat storage functional fabrics, and has the advantages of washability, environment friendliness and low cost compared with infrared warm-keeping clothes in the prior art.

The invention discloses a metalized polycrystalline silicon infrared micro-bolometer and a preparation method thereof. The micro-bolometer comprises a silicon substrate, an absorbing body and a reflecting layer, wherein the absorbing body is located above the silicon substrate, and is of a stacked structure composed of silicon dioxide / metalized polycrystalline silicon / silicon dioxide / silicon nitride, the reflecting layer is arranged above the absorbing body, and a cavity is formed between the reflecting layer and the absorbing body. The absorption-enhanced metalized polycrystalline silicon infrared micro-bolometer can be prepared by a standard integrated circuit process technology, can realize high integration of functions, is low in power consumption, and has a cost advantage.

The invention discloses a high-performance CMOS infrared micro bolometer based on surface electromagnetic wave resonance. The micro bolometer comprises an L-shaped micro bridge structure. The micro bridge structure comprises bridge piers, bridge arms and an infrared absorbing member. The infrared absorbing member has a multilayer structure which is composed of a silicon nitride layer, a metal grating layer, a silicon dioxide layer, a zigzag aluminum heat-sensitive resistor layer and a silicon dioxide layer, wherein the silicon nitride layer, the metal grating layer, the silicon dioxide layer,the zigzag aluminum heat-sensitive resistor layer and the silicon dioxide layer are successively arranged from top to bottom. Compared with a traditional micro bolometer structure, the micro bolometerstructure is advantageous in that the metal grating is added above the heat-sensitive resistor layer, thereby forming an MIM structure. The CMOS infrared micro bolometer utilizes a surface electromagnetic wave for exciting resonance, thereby remarkably improving infrared absorbility of a detector, improving detector response and realizing high-efficiency detection. Furthermore the micro bolometeraccording to the invention is based on a standard CMOS integrated circuit process and has advantages of easy process realization, low cost, etc.

The invention discloses an MEMS thermopile infrared detector and a manufacturing method thereof, and the infrared detector comprises: a substrate, which is provided with a heat insulation cavity; a supporting layer, which is formed on the upper surface of the substrate; a thermopile unit, which is formed on the supporting layer and sequentially comprises a first thermocouple layer, a first insulating layer and a second thermocouple layer from bottom to top, wherein the first thermocouple layer and the second thermocouple layer are connected through a first contact hole in the first insulating layer; a second insulating layer, an electromagnetic shielding layer and an infrared absorption layer, which are sequentially formed on the thermopile unit, wherein the infrared absorption layer and the second insulating layer are partially etched to form a second contact hole. According to the invention, the electromagnetic shielding layer which can be grounded is arranged below the infrared absorption layer, so that electromagnetic shielding is realized, measurement errors are reduced, and the reliability of the detector is improved; in addition, the electromagnetic shielding layer can reflect infrared radiation generated by a detected object, and secondary absorption of the infrared absorption layer is facilitated, so that the infrared absorption rate of the infrared absorption layer is improved, and the infrared detection performance is enhanced.

The invention discloses an infrared absorption film and a preparation method thereof, belongs to the technical field of microelectronic manufacturing, and solves the problems in the prior art that theinfrared absorption film has high absorption capacity only in a very narrow short-wave range, expensive preparation equipment and poor compatibility of micro-processing processes. The preparation method comprises the following steps: forming a sensitive layer; forming an absorption passivation layer and a pattern transfer layer on the sensitive layer in turn; forming a nanostructure on the side of the pattern transfer layer away from the absorption passivation layer by the first plasma etching; and transferring the nanostructure of the pattern transfer layer to the absorption passivation layer by the second plasma etching. The infrared absorption film comprises the sensitive layer and the absorption passivation layer which are laminated, wherein the nanostructure is formed on the side ofthe absorption passivation layer away from the sensitive layer. The infrared absorption film and the preparation method thereof can be used for infrared devices.

The invention provides infrared curing powder paint and a preparation method thereof. The infrared curing powder paint comprises, by weight, 50 parts of matrix resin, 12-50 parts of a curing agent, 0.5-5 parts of aliphatic binary acid, 0.5-5 parts of hydroxyl functional hyperbranched resin and 0.5-5 parts of a nano filler. The infrared curing powder paint is prepared by mixing the components, extruding the components by an extruder and tabletting and crushing the components. The infrared curing powder paint has a relatively high infrared absorption rate and is high in curing speed, a coating formed after curing has relatively high crosslinking density, hardness, toughness, adhesive force, solvent resistance, acid and alkali resistance and moisture and heat resistance, and the paint is suitable for coating of heat-sensitive base materials such as wood, engineering plastics, glass and paper.

The invention discloses a graphene near-infrared detector with an optical micro-cavity structure and a manufacturing method thereof. The detector comprises a substrate, a graphene layer and an electrode layer. A first light-transmitting layer and a second light-transmitting layer are arranged on the two sides of the graphene layer respectively, a first reflecting layer is arranged between the substrate and the first light-transmitting layer, and second reflecting layers distributed at intervals are arranged between the electrode layer and the second light-transmitting layer. And the first reflecting layer, the first light-transmitting layer, the second light-transmitting layer and the second reflecting layer jointly form an optical micro-cavity structure. The detector has the advantages ofsimple structure, high infrared absorptivity, stable and reliable work and the like.

The invention relates to a liquid crystal box for an infrared thermal imaging detector. In the infrared thermal imaging detector based on a liquid crystal rotation effect, infrared absorption rate of liquid crystal per se is low and the liquid crystal is difficult to use as an infrared sensitive material. The liquid crystal box for the infrared thermal imaging detector comprises an upper substrate, a lower substrate, orientation layers, a liquid crystal layer and sealing rings, wherein the orientation layers are arranged at the inner sides of the substrates, the liquid crystal layer is sandwiched between the orientation layers, the upper substrate transmits infrared light and visible light, and another substrate transmits the visible light; the orientation layers are made of an infrared light and visible light transmitting polymer material, parallel grooves are respectively and uniformly formed at one side of each of the two orientation layers, which faces the liquid crystal layer, and are perpendicular to one another, and infrared absorption layers are plated on the orientation layers by using a thin film deposition manner, and are made of a material which has better absorption characteristic on middle and far infrared rays. By adopting the liquid crystal box, the infrared absorption rate of a thin film is improved, the transformation efficiency of infrared absorption is improved, and the sensitivity of infrared detection is improved.

The invention provides an infrared thermopile sensing device. The device comprises a thermopile sensor formed on the basis of a substrate layer; the thermopile sensor comprises an absorption region; acavity is formed in the substrate layer; the absorption region is suspended above the cavity of the substrate layer; the absorption region comprises a first metal layer, a dielectric layer and a second metal layer which are stacked; the first metal layer is closer to the cavity of the substrate layer than the second metal layer; the dielectric layer of the absorption region is located between thefirst metal layer and the second metal layer; and the second metal layer of the absorption region is patterned to form a predetermined pattern. Thus, the infrared absorptivity is enhanced and the specific wavelength absorptivity is adjusted by making the metal layer into the predetermined pattern, so that the performance of the infrared thermopile sensing device is improved.

The invention relates to a pyroelectric relaxation single-crystal ultra-thin sensitive chip and a preparation method thereof. The preparation method comprises: grinding and chemical-mechanical polishing the front and back of the single-chip, and then performing the grinding and chemical-mechanical polishing on the The front and back of the single wafer are vacuum-deposited with a metal film layer; a blackened product is prepared, the blackened product is sprayed on the back of the single wafer after coating, and a mask blackened layer is formed on the back of the single wafer. The preparation method of a pyroelectric relaxation single crystal ultra-thin sensitive chip of the present invention adopts the new chemical mechanical grinding and polishing technology, the vacuum evaporation metal film layer and the ultrasonic spraying polymer mask blackening layer technology, to achieve The effective thinning of large-size pyroelectric single crystal materials ensures the firmness of the metal coating layer, as well as the uniformity, high adhesion and high infrared absorption rate of the blackened absorbing layer. Pyroelectric relaxor ferroelectric single crystal sensitive chip provides a new direction.