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Non-refrigeration broadband infrared detector

An infrared detector and broadband technology, applied in the direction of electrical radiation detectors, etc., can solve the problems of complex structure of infrared detectors, narrow infrared absorption band, unable to realize broadband, etc., to achieve excellent infrared detection performance and improve infrared absorption rate. , the effect of low-cost infrared detection

Active Publication Date: 2016-11-23
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the light-absorbing performance of vanadium oxide itself is poor, and infrared-absorbing materials such as silicon nitride and complex optical cavity structures are needed.
In addition, traditional uncooled broadband infrared detectors have a single detection band (8-14 μm), and cannot achieve wide-band (3-14 μm)
The existing uncooled wide-band infrared detector has complex structure, complex process, narrow infrared absorption band, and low infrared absorption rate, especially the uncooled infrared detection technology in the 3-5μm band is developing slowly

Method used

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Embodiment 2

[0046] An uncooled broadband infrared detector, the top view of its unit device structure is as follows figure 1 As shown, the cross-sectional view of the unit device structure is shown in figure 2 shown.

[0047] An uncooled broadband infrared detector in this embodiment, its unit device includes a silicon substrate 101 , a support layer 102 , a metal electrode 103 , a broadband infrared absorbing layer 104 , a heat sensitive layer 105 and a floating hole 106 . The broadband infrared absorbing layer 104 is placed above the heat sensitive layer 105, and the heat sensitive layer 105 is located in the middle of the broadband infrared absorbing layer 104 and is in contact with it; the metal electrodes 103 are placed on both sides of the heat sensitive layer 105, and the broadband infrared absorbing layer 104 above the two ends, and in contact with the broadband infrared absorption layer 104; the support layer 102 is placed above the silicon substrate 101, and the suspended hole...

Embodiment 3

[0057] An uncooled broadband infrared detector, the top view of its unit device structure is as follows figure 1 As shown, the cross-sectional view of the unit device structure is shown in figure 2 shown.

[0058] An uncooled broadband infrared detector in this embodiment, its unit device includes a silicon substrate 101 , a support layer 102 , a metal electrode 103 , a broadband infrared absorbing layer 104 , a heat sensitive layer 105 and a floating hole 106 . The broadband infrared absorbing layer 104 is placed above the heat sensitive layer 105, and the heat sensitive layer 105 is located in the middle of the broadband infrared absorbing layer 104 and is in contact with it; the metal electrodes 103 are placed on both sides of the heat sensitive layer 105, and the broadband infrared absorbing layer 104 above the two ends, and in contact with the broadband infrared absorption layer 104; the support layer 102 is placed above the silicon substrate 101, and the suspended hole...

Embodiment 4

[0068] An uncooled broadband infrared detector, the top view of its unit device structure is as follows figure 1 As shown, the cross-sectional view of the unit device structure is shown in figure 2 shown.

[0069]An uncooled broadband infrared detector in this embodiment, its unit device includes a silicon substrate 101 , a support layer 102 , a metal electrode 103 , a broadband infrared absorbing layer 104 , a heat sensitive layer 105 and a floating hole 106 . The broadband infrared absorbing layer 104 is placed above the heat sensitive layer 105, and the heat sensitive layer 105 is located in the middle of the broadband infrared absorbing layer 104 and is in contact with it; the metal electrodes 103 are placed on both sides of the heat sensitive layer 105, and the broadband infrared absorbing layer 104 above the two ends, and in contact with the broadband infrared absorption layer 104; the support layer 102 is placed above the silicon substrate 101, and the suspended hole ...

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Abstract

The invention discloses a non-refrigeration broadband infrared detector. Unit components of the non-refrigeration broadband infrared detector comprise silicon substrates, support layers, metal electrodes, broadband infrared absorption layers, thermal-sensitive layers and a suspension hole, wherein the thermal-sensitive layers are arranged in the middle of the upper parts or the lower parts of the broadband infrared absorption layers; the metal electrodes are arranged on two sides of the thermal-sensitive layers and the upper parts of two ends of the broadband infrared absorption layers; the support layers are arranged at the upper parts of the silicon substrates; the suspension hole is formed between the silicon substrates and the support layers and penetrates through the silicon substrates and the support layers; the broadband infrared absorption layers and the thermal-sensitive layers are arranged above the support layers and completely cover an opening in the upper end of the suspension hole between the support layers. Through the non-refrigeration broadband infrared detector, the broadband infrared absorption layers and the thermal-sensitive layer are combined together to form an infrared sensitive layer; with combination of the infrared sensitive layer and the suspension structure, the performance of the detector can be greatly improved; the problems of complex process, narrow infrared absorption band and low infrared absorption rate of the existing non-refrigeration broadband infrared detector are solved; the infrared detection with non-refrigeration broadband, low cost and high sensitivity is achieved.

Description

technical field [0001] The invention belongs to the field of optoelectronics and relates to an uncooled wide-band infrared detector. Background technique [0002] Infrared detector is an important technology of modern national defense and military, which is convenient for officers and soldiers to observe and operate at night, in smog and fog. At present, the widely used infrared detector technology includes cooling and uncooling. Among them, cooling infrared imaging requires complex cooling equipment, which makes the system bulky and difficult for individual combat. Uncooled infrared imaging technology started relatively late, but developed rapidly. Among them, the uncooled infrared detector technology with vanadium oxide as the sensitive unit has been widely used in the field of national defense and military affairs. However, the light-absorbing performance of vanadium oxide itself is poor, and infrared-absorbing materials such as silicon nitride and complex optical cavity...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/10
CPCG01J5/10Y02P70/50
Inventor 杨俊魏兴战汤林龙史浩飞杜春雷
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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