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Graphene near-infrared detector with optical micro-cavity structure and manufacturing method thereof

An optical microcavity, graphene technology, applied in the field of infrared detection, can solve the problems of reduced device performance, low light absorption rate, lack of optical gain mechanism, etc., to achieve the effect of improving work stability and reliability, and improving infrared absorption rate

Pending Publication Date: 2021-03-26
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology

[0004] Although graphene has outstanding advantages in light detection, it also has obvious shortcomings: graphene itself has low light absorption rate and lack of light gain mechanism, resulting in low light responsivity of graphene detectors, which cannot meet practical applications. needs
Due to the chemical inertness of carbon atoms, intrinsic graphene has a limited ability to adsorb molecules or atoms, and basically belongs to the category of physical adsorption, which is easily desorbed by temperature and degrades device performance.
Doping will easily affect the intrinsic properties of graphene, resulting in additional signal interference and performance loss

Method used

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  • Graphene near-infrared detector with optical micro-cavity structure and manufacturing method thereof
  • Graphene near-infrared detector with optical micro-cavity structure and manufacturing method thereof
  • Graphene near-infrared detector with optical micro-cavity structure and manufacturing method thereof

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preparation example Construction

[0038] The present invention also discloses a method for preparing a graphene near-infrared detector with an optical microcavity structure as described above, comprising the steps of:

[0039] 1) sequentially depositing the first reflective layer 2 and the first light-transmitting layer 3 on the substrate 1;

[0040] 2) preparing a graphene layer 4 on the first transparent layer 3;

[0041] 3) preparing the second light-transmitting layer 5 and the second reflective layer 6 sequentially on the graphene layer 4;

[0042] 4) Prepare the electrode layer 7 on the second reflective layer 6 .

[0043] The preparation method of the present invention is simple to operate, and the directly obtained graphene near-infrared detector also has the advantages described above for the detector.

[0044] In this embodiment, in step 3), the specific process of preparing the second reflective layer 6 is:

[0045] 3.1) Making a glue layer array pattern 9 on the surface of the second light-trans...

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Abstract

The invention discloses a graphene near-infrared detector with an optical micro-cavity structure and a manufacturing method thereof. The detector comprises a substrate, a graphene layer and an electrode layer. A first light-transmitting layer and a second light-transmitting layer are arranged on the two sides of the graphene layer respectively, a first reflecting layer is arranged between the substrate and the first light-transmitting layer, and second reflecting layers distributed at intervals are arranged between the electrode layer and the second light-transmitting layer. And the first reflecting layer, the first light-transmitting layer, the second light-transmitting layer and the second reflecting layer jointly form an optical micro-cavity structure. The detector has the advantages ofsimple structure, high infrared absorptivity, stable and reliable work and the like.

Description

technical field [0001] The invention mainly relates to the technical field of infrared detection, in particular to a graphene near-infrared detector with an optical microcavity structure and a manufacturing method thereof. Background technique [0002] Graphene is a two-dimensional material composed of a single layer of carbon atoms. It has many excellent physical properties, such as high strength, good ductility, and good thermal conductivity. However, graphene has become a research hotspot in the field of photoelectric detection mainly because it has unique optical and electrical properties different from traditional semiconductor materials, and can be applied in industrial automatic control, remote sensing imaging, guidance, medical diagnosis, environmental monitoring, optical communication and other fields. [0003] At present, infrared detection materials with high response rate and high detectivity, such as HgCdTe, InGaAs, quantum wells, II-type superlattices, etc., ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/028H01L31/0352H01L31/09H01L31/18
CPCH01L31/028H01L31/0352H01L31/09H01L31/1804Y02P70/50
Inventor 蓝镇立何峰丁玎张浩
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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