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A pyroelectric relaxation single crystal ultra-thin sensitive chip and its preparation method

A single-chip, pyroelectric technology, applied to thermoelectric devices, thermoelectric devices with thermal changes in dielectric constant, circuits, etc., can solve the problems of low sensitivity of pyroelectric detectors, low infrared absorption rate, poor adhesion, etc.

Active Publication Date: 2021-04-20
北立传感器技术(武汉)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The ultra-thin metal film process is simple, but the infrared absorption rate is low, generally around 50%, resulting in low energy utilization and low sensitivity of pyroelectric detectors; metal blackening technology generally uses gold black or silver black, and the infrared absorption rate Up to 90%, but the process requirements are complicated and the adhesion is poor
So that in actual use, the performance of the detector is affected to a certain extent

Method used

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  • A pyroelectric relaxation single crystal ultra-thin sensitive chip and its preparation method
  • A pyroelectric relaxation single crystal ultra-thin sensitive chip and its preparation method

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Embodiment Construction

[0015] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0016] In the present invention, the grinding jig in the grinding process includes a substrate, a single wafer adsorption layer and a mask slot, the size of the slot is equivalent to that of a single wafer, the depth of the slot is fixed, and the single wafer is non-adhesively adsorbed on the card. Inside the groove, if the thickness value of the ground single wafer is equal to the depth of the groove, it indicates that the surface of the single wafer is flat, and the flatness is guaranteed to be within ±1μm.

[0017] Such as figure 1 As shown, a method for preparing a pyroelectric relaxation single crystal ultra-thin sensitive chip comprises the following steps:

[0018] Step 1: Grinding and chemical-mechanical po...

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Abstract

The invention relates to a pyroelectric relaxation single-crystal ultra-thin sensitive chip and a preparation method thereof. The preparation method comprises: grinding and chemical-mechanical polishing the front and back of the single-chip, and then performing the grinding and chemical-mechanical polishing on the The front and back of the single wafer are vacuum-deposited with a metal film layer; a blackened product is prepared, the blackened product is sprayed on the back of the single wafer after coating, and a mask blackened layer is formed on the back of the single wafer. The preparation method of a pyroelectric relaxation single crystal ultra-thin sensitive chip of the present invention adopts the new chemical mechanical grinding and polishing technology, the vacuum evaporation metal film layer and the ultrasonic spraying polymer mask blackening layer technology, to achieve The effective thinning of large-size pyroelectric single crystal materials ensures the firmness of the metal coating layer, as well as the uniformity, high adhesion and high infrared absorption rate of the blackened absorbing layer. Pyroelectric relaxor ferroelectric single crystal sensitive chip provides a new direction.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a pyroelectric relaxation single crystal ultra-thin sensitive chip and a preparation method thereof. Background technique [0002] At present, most pyroelectric infrared detectors are made of single crystal or ceramic body materials. Especially mid-to-high-end detectors are mainly based on single crystals. The core of mid-to-high-end detectors is the preparation of single-crystal sensitive chips. Usually in actual use, the body material is required to be thinned to a thickness of tens of microns, which is difficult to machine, poor in consistency, low in efficiency, and high in cost. One of the ways to overcome the above shortcomings is to thin the bulk material and grind it to a smaller size. The thickness of the pyroelectric film is generally between 0.1 micron and several microns. However, its own mechanical strength is poor, and it needs to b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L37/00H01L37/02H10N15/00H10N15/10
CPCH10N15/00H10N15/10
Inventor 李龙
Owner 北立传感器技术(武汉)有限公司
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