31results about How to "Control growth direction" patented technology

The present invention provides a polysilicon fabrication method that can control a growth direction of polysilicon, comprising the following steps: step 1, depositing and forming a first buffer layer (20) on a substrate (10); step 2, forming a lens-like structure (22) on a surface of the first buffer layer (20) through a photo masking process; step 3, depositing and forming an amorphous silicon layer (40) on the first buffer layer (20) with the lens-like structure (22) formed on the surface; step 4, cleaning the amorphous silicon layer (40); step 5, using a strong light (50) to illuminate the amorphous silicon layer (40) from a side of the substrate (10) so as to make seed crystals be generated at a bottom of the amorphous silicon layer (40); and step 6, performing laser annealing processing on the amorphous silicon layer (40) with the seed crystals generated so as to make amorphous silicon in the amorphous silicon layer (40) crystallize and form a polysilicon layer (70). The present invention can control the growth direction of the polysilicon.

The invention relates to a device for testing hot crack of an aluminum alloy under the condition of an active applied load. The device mainly comprises a test sample mold unit, a connecting screw, a data testing unit, a frame-type connecting mechanism and a load application unit which are sequentially connected and positioned on the upper part of an equipment pedestal; and a data acquisition unit is connected with the data testing unit. Through the device for testing the hot crack of the aluminum alloy, information such as critical load and temperature change when a test sample is cracked can be acquired, and data information is provided for constructing a relation between the solid phase rate of the aluminum alloy and the applied load; and test samples with different dendritic crystal growth directions can be acquired by constructing different cooling velocities of the aluminum alloy through different heat preservation materials, and a relation between the growth direction of dendritic crystal and the hot crack is sought. The testing device is simple in structure, reasonable in design and easy and convenient to operate, is applied to easy-cracking alloy and non-cracking alloy, further enriches the category of testing equipment used in the hot crack research process, and promotes research and development of the hot crack.

The invention discloses a polysilicon preparation device comprising: a support platform, a reflective layer is arranged on the surface of the support platform, the reflective layer has a plurality of reflective mirrors and a diffuse reflective layer, and the diffuse reflective layer is arranged on the reflective Between the mirror and the reflecting mirror, a glass substrate is arranged on the reflective layer, a buffer layer is arranged on the glass substrate, and an amorphous silicon layer is arranged on the buffer layer; when performing laser annealing, the wear Diffuse reflection occurs when the laser light penetrating the amorphous silicon layer is irradiated on the diffuse reflection layer region; when it is irradiated on the mirror region, the reflected laser light can be focused on the amorphous silicon layer, so that the Amorphous silicon can absorb energy and form an energy gradient with other regions. The invention can control the crystallization direction and the growth direction when polysilicon is formed, increase the size of crystal grains, and increase the electron mobility of polysilicon.

The invention discloses a bolt grouting material for deep foundation pit construction and a preparation method thereof. First, the admixture, a part of the admixture and cement are uniformly mixed to obtain a solid material, and then another part of the admixture is added to water, and the mixture is stirred and mixed. uniformly to obtain premixed slurry, and finally add solid materials into the premixed slurry, stir and mix to obtain the described bolt grouting material; wherein, the admixture is based on fly ash and corn stalk powder Raw materials are prepared; the admixture is modified by first modifying the aluminum silicate-calcium phosphate nanoparticles to obtain the modified nanoparticles, and then performing a polymerization reaction, adding aluminum silicate-calcium phosphate nanoparticles during the polymerization process, and polymerizing After the reaction is completed, the polymer is obtained, and then the polymer is mixed with polypropylene and heated until melted, spun into fibers, and crushed. The obtained bolt grouting material has good fluidity, high early strength, high anchoring force after grouting the bolt, and meets the construction requirements of deep foundation pits.

The invention provides a method for rapidly preparing oriented thin strip electrical steel at a room temperature by using a pulse current and belongs to the technical field of silicon steel preparation. The method for rapidly preparing the oriented thin strip electrical steel at the room temperature by using the pulse current comprises the steps of determining an orientation relation between a current and rolling; fixing 0.1 mm cold-rolled oriented thin strip electrical steel on a pulse power supply by using a fixture; continuously applying a pulse to a corresponding time; carrying out pulse annealing treatment on the oriented thin strip electrical steel; and determining a pulse current acting direction, a pulse current parameter and a pulse current acting time according to the rolling direction and the room temperature environment of pulse current annealing treatment, wherein the pulse treatment parameter range is that the frequency is 1-200 Hz, the pulse width is 10 microseconds to 1millisecond, the current is 10-1000A, and the acting time is 1-30 min. According to the method for rapidly preparing the oriented thin strip electrical steel at the room temperature by using the pulse current, the growing direction of a Goss texture in a cold-rolled sample with a smaller thickness can be controlled, and a more sharp Goss texture can be obtained; and meanwhile, the temperature needed by secondary recrystallization can also be reduced, the time needed by secondary recrystallization can also be shortened, a lot of energy is saved, and the preparation process flow of the orientedthin strip electrical steel is greatly shortened.

The invention provides a thin film transistor, a manufacturing method thereof, a display substrate and a display device, and belongs to the field of display technology. The thin film transistor includes a gate, a source, a drain and an active layer, and the step of forming the active layer includes: forming a pattern of an insulating layer; forming a pattern of an amorphous silicon layer on the insulating layer, the The pattern of the amorphous silicon layer includes a first part located on the thermal insulation layer and a second part beyond the thermal insulation layer; the pattern of the amorphous silicon layer is processed by a laser annealing process so that the amorphous silicon A layer grows grains in a direction from said second portion to said first portion, forming said active layer composed of polysilicon. The technical solution of the present invention can prepare a polysilicon active layer with larger grain size and better uniformity at a lower cost, thereby improving the carrier mobility and the stability of the threshold voltage of the thin film transistor.

The invention discloses a directional cooling preparation device for microstructured biological materials, which relates to the technical field of microstructured biological materials. Cold column, one end of the first cooling column extends to the outside of the cold source tank and is inserted into the seal, the seal seals the cold source tank, the seal communicates with the material chamber, and the outlet of the material chamber is provided with a sealed thermal insulation cover , forming a directional conduction structure in which the cold source transfers energy to the material chamber along the first cooling column. The material chamber that can accommodate the material is set at the part of the device, so that the material is in contact with the first cooling column, the energy of the cold source is transferred to the material through the directional guidance of the first cooling column, and the direction of the cooling source is controlled, thereby controlling the ice crystals. Growth direction, reducing the difficulty of material preparation, high repeatability, good reproducibility, and controllable process.

The invention discloses a high-chromium alloy wear resistant lining plate for an impact crusher and a preparation method thereof. The lining plate comprises the following alloy elements in percentage by mass: 2.0-2.8% of C, 1.0-1.5% of Mn, 0.3-0.8% of Si, 13-16% of Cr, 0.5-1.0% of Ni, 0.12-0.25% of B, 0.30-0.45% of Mo, 0.22-0.40% of Cu, 0.05-0.15% of Re, 0.05-0.15% of Rh, and the balance of Fe and inevitable impurities. The lining plate further comprises ZrC powder being 2-4% of total mass of high-chromium cast iron. The prepared high-chromium alloy wear resistant lining plate is excellent in quality, high in strength, excellent in wear resistance, not easy to deform and break and long in service life, and is 5-7 times of the life of a general high-chromium alloy wear resistant lining plate.