31results about How to "Control growth direction" patented technology

The invention is a method for manufacturing nano tube probe tip; the pin applies to various mode of atom microscope. At first, the method decorates hydrophobe single layer film on the surface of various silicon probe pin, then it uses electrical field to eliminate the film or oxides the film into hydrophile film, it calculates the size of the activated area through the action that the pin acts onthe standard sample surface, then it fixed catalyst particles in the hydrophile area on the surface of the pin, finally, puts the pin which carries catalyst nano particles in the nano reactor and forms into nano tube.

The invention discloses a high chromium cast iron containing SiC powder, a preparation method thereof and a wear resistant casting manufacturing method utilizing the same. A technical scheme is that a high chromium cast iron containing SiC powder is characterized in that the SiC powder is 99.9% SiC and with an average granularity of 20-40 nm, and accounts for 3-6% of a gross weight of the high chromium cast iron. The high chromium cast iron also comprises 3.1-3.9% of C, 18-22% of Cr, 0.5-1.0% of Si, 0.6-1.6% of Mo, 0.6-1.2% of Mn, 0.1-0.4% of Ni, 0.04-0.09% of V, 0.011-0.031% of S, and 0.018-0.030% of P. The beneficial effects are that :1) wear resistance of the casting id substantially raised by the SiC powder; 2) the SiC powder is used to enhance the high chromium cast iron material to form a high impact-resistant, friction-resistant, wearing- resistant high chromium cast iron wear-resistant blast blade. Therefore, the SiC nano powder can not only change growth morphology of high chromium cast iron crystal and growthform of a martensite to substantially enhance material hardness, but also improve material friction and wearing performance at a high temperature to obviously play a role of friction and wearing resistance at a high temperature.

The invention relates to a device for testing hot crack of an aluminum alloy under the condition of an active applied load. The device mainly comprises a test sample mold unit, a connecting screw, a data testing unit, a frame-type connecting mechanism and a load application unit which are sequentially connected and positioned on the upper part of an equipment pedestal; and a data acquisition unitis connected with the data testing unit. Through the device for testing the hot crack of the aluminum alloy, information such as critical load and temperature change when a test sample is cracked canbe acquired, and data information is provided for constructing a relation between the solid phase rate of the aluminum alloy and the applied load; and test samples with different dendritic crystal growth directions can be acquired by constructing different cooling velocities of the aluminum alloy through different heat preservation materials, and a relation between the growth direction of dendritic crystal and the hot crack is sought. The testing device is simple in structure, reasonable in design and easy and convenient to operate, is applied to easy-cracking alloy and non-cracking alloy, further enriches the category of testing equipment used in the hot crack research process, and promotes research and development of the hot crack.

The invention provides a thin film transistor and a manufacturing method thereof, a display substrate and a display device, and belongs to the technical field of display. The thin film transistor comprises a gate electrode, a source electrode, a drain electrode and an active layer, the step of forming the active layer comprises: forming a pattern of a heat preservation layer; forming a pattern of a noncrystalline silicon layer on the heat preservation layer, wherein the pattern of the noncrystalline silicon layer comprise a first part located on the heat preservation layer and a second part exceeding the heat preservation layer; and treating the pattern of the noncrystalline silicon layer by using a laser annealing process to grow crystalline grains on the noncrystalline silicon layer along a direction from the second part to the first part so as to form the active layer composed of polycrystalline silicon. The technical scheme provided by the invention can prepare the polycrystalline silicon active layer with large crystalline grain size and better uniformity at a lower cost, and thus the carrier mobility of the thin film transistor and the stability of a threshold voltage are improved.

The invention discloses a high-chromium alloy wear resistant lining plate for an impact crusher and a preparation method thereof. The lining plate comprises the following alloy elements in percentage by mass: 2.0-2.8% of C, 1.0-1.5% of Mn, 0.3-0.8% of Si, 13-16% of Cr, 0.5-1.0% of Ni, 0.12-0.25% of B, 0.30-0.45% of Mo, 0.22-0.40% of Cu, 0.05-0.15% of Re, 0.05-0.15% of Rh, and the balance of Fe and inevitable impurities. The lining plate further comprises ZrC powder being 2-4% of total mass of high-chromium cast iron. The prepared high-chromium alloy wear resistant lining plate is excellent in quality, high in strength, excellent in wear resistance, not easy to deform and break and long in service life, and is 5-7 times of the life of a general high-chromium alloy wear resistant lining plate.

The invention provides a method for manufacturing polycrystalline silicon with growth directions controllable. The method includes the following steps that firstly, a first buffering layer (20) is deposited on a substrate (10); secondly, a lens-like structure (22) is formed on the surface of the first buffering layer (20) through photomask manufacturing; thirdly, an amorphous silicon layer (40) is deposited on the first buffering layer (20) with the lens-like structure (22) formed on the surface; fourthly, the amorphous silicon layer (40) is cleaned; fifthly, the amorphous silicon layer (40) is illuminated through hard light (50) from the substrate (10) to make seed crystals generated at the bottom of the amorphous silicon layer (40); sixthly, the amorphous silicon layer (40) with the generated seed crystals is subject to laser annealing treatment to make amorphous silicon in the amorphous silicon layer (40) crystallized so as to form a polycrystalline silicon layer (70). The growth directions of the polycrystalline silicon can be controlled through the method.

The method for preparing the tip of the nanotube probe is a method for preparing the tip suitable for various modes of the atomic force microscope. In this method, a hydrophobic monolayer film is firstly modified on the surface of various silicon probe tips, and then the hydrophobic film at the tip of the tip is removed or oxidized into a hydrophilic film by an electric field, and the tip on which the electric field has been applied is detected by a scanning probe microscope. The size of the activation area is calculated by the effect on the surface of the standard sample, and then the catalyst particles are fixed on the hydrophilic area on the surface of the needle tip, and finally the needle tip loaded with catalyst nanoparticles is placed in the nanotube reactor to grow nanotubes. The method of the invention not only requires simple equipment and is convenient to operate, but also can grow single, single-wall nanometer carbon tubes with high efficiency, and is suitable for commercial industrial production.

The invention discloses a plant growth box which comprises a framework body, a growth mesh plate and a limiting mesh plate; the growth mesh plate is connected to the bottom of the framework body, and the bottom of the growth mesh plate is exposed; the limiting mesh plate is positioned above the growth mesh plate and arranged in the framework body; and the growth mesh plate is provided with a plurality of planting holes for planting plants, the limiting mesh plate is provided with a plurality of limiting holes for allowing the stem leaves of the planted plants to pass through the limiting mesh plate and upwards grow, and the cross section area of the limiting holes is greater than that of the planting holes. Because the plant growth box is provided with the limiting mesh plate, the growth directions of the plants can be effectively controlled; and the plant growth box has the characteristics of simple structure and low cost.

The invention discloses a VN / TiN-powder-containing high-chromium cast iron and a preparation method thereof, and a wear-resistant part. The technical scheme is as follows: the VN / TiN-powder-containing high-chromium cast iron is characterized in that the purity of the VN powder is 99.5%, and the purity of the TiN powder is 99.3%; the VN powder accounts for 2-4 wt% of the high-chromium cast iron, and the TiN powder accounts for 2-4 wt% of the high-chromium cast iron; and the high-chromium cast iron also comprises 3.1-3.9% of C, 18-22% of Cr, 0.5-1.0% of Si, 0.6-1.6% of Mo, 0.6-1.2% of Mn, 0.1-0.4% of Ni, 0.04-0.09% of V, 0.011-0.031% of S, 0.018-0.030% of P and the balance of iron as base material. The VN / TiN powder can be used as a high-chromium cast iron molten metal base and a nucleationcore for solidifying carbides, thereby enhancing the wear resistance of the castings; the VN / TiN powder is utilized to reinforce the high-chromium cast iron material, so that wear-resistant shot blasting device blades made of the high-impact-resistant frictional-wear-resistant high-chromium cast iron can be formed; and since the VN / TiN powder is added by an in-furnace addition method, the nanoparticles are added to perform a strengthening effect, and argon gas added into the furnace protects the molten metal.

The invention discloses a method and device for preparing a superfine atomic force microscope metal probe. A homogeneous metal fracture end and a metal probe tip are respectively prepared, the metal fracture end is arranged at the fixed end of an electrical-mechanical sample rod, the metal probe tip is loaded on the movable end of the electrical-mechanical sample rod, and the two ends are oppositely arranged without contact. In a transmission electron microscope, the metal probe tip aligns with and is close to a fracture sample by piezoelectric ceramic drive; and a constant bias voltage is applied two ends at a critical contact point, and the preparation of the superfine atomic force microscope metal probe is realized by utilizing the electro-atomic migration effect. The preparation methodof the atomic force microscope metal probe is high in success rate, the growth direction and the length of a finished product are controllable, the diameter of the tip is less than 5nm, and the stability and the conductivity are good.

The invention belongs to the technical field of silver nanometer material preparation, and discloses a large-ring-diameter silver nanoring and a preparation method thereof. Polyvinylpyrrolidone is dissolved in glycerol, then tetramethylammonium chloride is added to be stirred and mixed evenly with a NaBr glycerol solution, and a nucleation control agent solution is obtained; AgNO3 is dissolved ina mixed solution of deionized water or ethanediol and glycerol, and an AgNO3 solution is obtained; and the AgNO3 solution is added into the nucleation control agent solution dropwise to react at the temperature ranging from 155 DEG C to 165 DEG C, products are dispersed into ethyl alcohol after being separated and washed, and large-ring-diameter silver nanoring dispersion liquid is obtained. The micro environmental deviation is controlled by controlling the viscosity of reaction liquid and the solvent mixing proportion, the ring diameter of the prepared silver nanoring reaches 25 micrometers to 41 micrometers, the process is simple, and the cost is low. The silver nanoring can be applied into transparency electrodes, optical nanometer antennas, plasma laser devices or optical control devices and other devices.

The invention discloses a novel casting method for high-chromium cast iron containing CZr powder. The novel casting method comprises the steps of mixing the CZr powder with scrap iron, placing the mixture into a casting ladle, smelting and stirring ferromolybdenum, ferrochromium, silicon iron, ferronickel and ferrovanadium, carrying out deoxygenation and slagging-off treatment after the raw materials are completely molten, pouring the treated refined molten metal into the casting ladle in batches, stirring the CZr powder and the refined molten metal for being fully mixed, then carrying out casting molding and finally obtaining final products after the high-chromium cast iron containing the CZr powder undergoes heat treatment. According to the method, the cast high-chromium cast iron has the advantages of being resistant to high temperature, friction and abrasion, and the phenomena that the high-chromium cast iron is cracked and the surface of the high-chromium cast iron is peeled off layer by layer in the use process hardly occur. The method is scientific, effective and suitable for being widely popularized in industry.

The invention provides a concrete admixture and a preparation method thereof. The preparation method comprises the following steps: preparing calcium silicate and magnesium silicate nanoparticles by taking a magnesium nitrate aqueous solution, a sodium silicate aqueous solution, tetraethyl orthosilicate, calcium nitrate and the like as raw materials; modifying the halloysite nanotube by using N-([beta]-aminoethyl-[gamma]-aminopropyl triethoxysilane to obtain a modified halloysite nanotube, and reacting the modified halloysite nanotube with the epoxidized bark powder to obtain modified bark powder; and finally, taking acrylamide and N-(4-aminophenyl)acrylamide as raw materials to carry out polymerization reaction, and adding calcium silicate and magnesium silicate nanoparticles and the modified bark powder in the polymerization process. The concrete admixture is helpful for greatly accelerating early hydration of cement, has a good early strength effect, has a very good adsorption and solidification effect on chloride ions, and prevents concrete from being eroded and damaged by the chloride ions.

The invention relates to a preparation method of a high-selectivity titanium dioxide photoanode applied to organic fluorine-containing sewage and products and application thereof. F- serves as crystalorientating agent, trifluorotoluene serve as a template, and an ultrasonic-hydrothermal method is applied to prepared a (001) crystal face TiO2 molecular imprinting photoanode material with high photoelectrocatalytic performance. The preparation method comprises carrier pretreatment, preparation of the (001) crystal face TiO2 molecular imprinting photoanode material, and fluorine removal treatment. The high-selectivity titanium dioxide photoanode applied to the organic fluorine-containing sewage can efficiently selectively reduce the COD (chemical oxygen demand) of the fluorine-containing sewage and can be applied to the field of water pollution treatment. The preparation method of the high-selectivity titanium dioxide photoanode applied to the organic fluorine-containing sewage combinesand gives full play to the advantages of the special molecular identification ability of molecular imprinting technology and the nano-photoelectrocatalytic oxidation technology, and enhances photoelectrocatalytic selective degradation and meanwhile effectively solves the problem of difficulty in catalyst recycling, thereby achieving high practical application values.

The invention belongs to the field of sesame paste, and particularly relates to sesame paste having cantonese style traditional flavor. The sesame paste comprises the following raw materials in parts by weight: 20-30 parts of peanuts, 5-10 parts of apricot kernels, 30-42 parts of sesame seeds, 10-20 parts of walnuts, 10-23 parts of soybean flour, 30-45 parts of polished round-grained rice, 6-10 parts of leaves and bark of clausena excavata, 33-55 parts of fruit paste, 10-15 parts of ginger juice, 2-4 parts of nanometer calcium phosphate, 8-12 parts of a sweetening agent and 150-200 parts of deionized water. The invention further discloses a cooking technology of the sesame paste having the cantonese style traditional flavor. The sesame paste prepared by the cooking technology is rich in various nutrient elements and is easy to process, and after the sesame paste is eaten for a long term, burden cannot be caused on the intestine and the stomach, so that the sesame paste has broad market popularization prospects.

The invention discloses a method for constructing an engineered intelligent myocardial tissue based on a fish scale substrate. The method comprises the following steps: cleaning fresh fish scales, removing pigments by adopting an alkaline solution, and then carrying out decalcification treatment on the fish scales; a layer of thermally induced deformation film is adhered to the bottom of the fish scale; the treated fish scales are subjected to sterilization and surface modification, and then myocardial cells and other supporting cells are inoculated for co-culture; under the driving of near-infrared laser, the fish scales of the compound cells simulate cardiac contraction to autonomously deform so as to construct intelligent cardiac muscle tissues. According to the method disclosed by the invention, the engineered myocardial tissue with space-time intelligent response can be obtained, the structure and function maturation of the engineered myocardial tissue can be promoted by fully combining directional cell assembly and simulating non-contact mechanical stimulation of an in-vivo physiological environment, and the method is applied to the research of myocardial repair, in-vitro cardiovascular disease model construction and cardiac toxicity screening.

The invention discloses a method for induced growth of DAST and a derivative single-crystal film thereof by using a self-assembly monomolecular film. The method comprises the following steps: performing self-assembly of a layer of monomolecular film containing one or more functional groups of -SO3-, -OH, -Cl-, -NH2-, -F- and -COOH on the surface of a substrate to realize functionalization of the substrate; clinging two functionalized substrates in parallel and inserting to DAST or DAST derivative solution; and growing DAST or DAST derivative single crystal between the two substrates by adopting a slow solvent evaporation process. The method disclosed by the invention can effectively overcome the problems such as poor thickness and orientation controllability of crystal, easy formation of twin crystal and water vapor interference with crystal growth in the growth process of organic film single crystal, and can effectively control the thickness and growth direction of the DAST or DAST derivative crystal to avoid twin crystal.

The invention discloses a method and device for preparing a superfine atomic force microscope metal probe. A homogeneous metal fracture end and a metal probe tip are respectively prepared, the metal fracture end is arranged at the fixed end of an electrical-mechanical sample rod, the metal probe tip is loaded on the movable end of the electrical-mechanical sample rod, and the two ends are oppositely arranged without contact. In a transmission electron microscope, the metal probe tip aligns with and is close to a fracture sample by piezoelectric ceramic drive; and a constant bias voltage is applied two ends at a critical contact point, and the preparation of the superfine atomic force microscope metal probe is realized by utilizing the electro-atomic migration effect. The preparation methodof the atomic force microscope metal probe is high in success rate, the growth direction and the length of a finished product are controllable, the diameter of the tip is less than 5nm, and the stability and the conductivity are good.

The invention discloses a polysilicon preparation device comprising: a support platform, a reflective layer is arranged on the surface of the support platform, the reflective layer has a plurality of reflective mirrors and a diffuse reflective layer, and the diffuse reflective layer is arranged on the reflective Between the mirror and the reflecting mirror, a glass substrate is arranged on the reflective layer, a buffer layer is arranged on the glass substrate, and an amorphous silicon layer is arranged on the buffer layer; when performing laser annealing, the wear Diffuse reflection occurs when the laser light penetrating the amorphous silicon layer is irradiated on the diffuse reflection layer region; when it is irradiated on the mirror region, the reflected laser light can be focused on the amorphous silicon layer, so that the Amorphous silicon can absorb energy and form an energy gradient with other regions. The invention can control the crystallization direction and the growth direction when polysilicon is formed, increase the size of crystal grains, and increase the electron mobility of polysilicon.

The invention provides a method for rapidly preparing oriented thin strip electrical steel at a room temperature by using a pulse current and belongs to the technical field of silicon steel preparation. The method for rapidly preparing the oriented thin strip electrical steel at the room temperature by using the pulse current comprises the steps of determining an orientation relation between a current and rolling; fixing 0.1 mm cold-rolled oriented thin strip electrical steel on a pulse power supply by using a fixture; continuously applying a pulse to a corresponding time; carrying out pulse annealing treatment on the oriented thin strip electrical steel; and determining a pulse current acting direction, a pulse current parameter and a pulse current acting time according to the rolling direction and the room temperature environment of pulse current annealing treatment, wherein the pulse treatment parameter range is that the frequency is 1-200 Hz, the pulse width is 10 microseconds to 1millisecond, the current is 10-1000A, and the acting time is 1-30 min. According to the method for rapidly preparing the oriented thin strip electrical steel at the room temperature by using the pulse current, the growing direction of a Goss texture in a cold-rolled sample with a smaller thickness can be controlled, and a more sharp Goss texture can be obtained; and meanwhile, the temperature needed by secondary recrystallization can also be reduced, the time needed by secondary recrystallization can also be shortened, a lot of energy is saved, and the preparation process flow of the orientedthin strip electrical steel is greatly shortened.

The invention discloses a microstructure biological material directional cooling preparation device, and relates to the technical field of microstructure biological materials. The microstructure biological material directional cooling preparation device comprises a cold source tank, a placing cylinder is arranged in the cold source tank, a cold conduction mechanism is arranged in the placing cylinder, the cold conduction mechanism comprises a first cold conduction column, one end of the first cold conduction column extends to the outside of the cold source tank and is inserted into a sealing piece, the sealing piece seals the cold source tank and communicates with a material cavity, a sealed heat preservation cover is arranged at an outlet of the material cavity, a directional conduction structure for a cold source to transmit energy to the material cavity along the first cold conduction column is formed, the two ends of the first cold conduction column are located inside and outside the cold source tank correspondingly, and the part, located outside the cold source tank, of the first cold conduction column is provided with a material cavity capable of containing materials. The materials are in contact with the first cold conduction column, energy of a cold source is transmitted to the materials through directional guiding of the first cold conduction column, the conduction direction of the cold source is controlled, then the growth direction of ice crystals is controlled, the material preparation difficulty is reduced, the repeatability is high, the reproducibility is good, and the process is controllable.

The invention discloses a preparation method of a one-dimensional cadmium selenide semiconductor nanowire. The preparation method comprises the steps that a metal catalyst thin film is deposited on a substrate; in the presence of protective gas, cadmium sulfide and cadmium selenide are uniformly mixed; and the substrate on which the catalyst thin film is deposited and the cadmium sulfide and the cadmium selenide which are mixed are heated, and the nanowire is obtained through a chemical vapor deposition method. By adopting the chemical vapor deposition method, large-area batch growth can be achieved, the growth direction and length of the semiconductor nanowire can be effectively controlled, and the carrier mobility of the semiconductor nanowire can be remarkably improved. A manufactured photoelectric detector is excellent in performance.

The invention discloses a directional cooling preparation device for microstructured biological materials, which relates to the technical field of microstructured biological materials. Cold column, one end of the first cooling column extends to the outside of the cold source tank and is inserted into the seal, the seal seals the cold source tank, the seal communicates with the material chamber, and the outlet of the material chamber is provided with a sealed thermal insulation cover , forming a directional conduction structure in which the cold source transfers energy to the material chamber along the first cooling column. The material chamber that can accommodate the material is set at the part of the device, so that the material is in contact with the first cooling column, the energy of the cold source is transferred to the material through the directional guidance of the first cooling column, and the direction of the cooling source is controlled, thereby controlling the ice crystals. Growth direction, reducing the difficulty of material preparation, high repeatability, good reproducibility, and controllable process.

A disclosed polysilicon preparation apparatus comprises a supporting platform, the surface of the supporting platform is provided with a reflection layer which possesses multiple reflection mirrors and a diffuse reflection layer; and the diffuse reflection layer is arranged among the reflection mirrors; the reflection layer is provided with a glass base plate, the glass base plate is provided with a buffer layer, and the buffer layer is provided with an amorphous silicon layer. When laser annealing is performed, diffuse reflection is generated when laser penetrating the amorphous silicon layer irradiates the diffuse reflection layer, reflected laser is gathered on the amorphous silicon layer when the reflection mirrors are irradiated, so that amorphous silicon at the area is capable of absorbing energy and energy gradient is formed on the area and the other area. According to the apparatus and the method, the crystallization direction can be controlled, the growth direction of polysilicon is controlled, the size of the crystal particle is raised, and the electron migration rate of polysilicon is improved.

The invention discloses a high-chromium abrasion-resistant casting and a preparation process thereof. The high-chromium abrasion-resistant casting comprises, by weight, 1.6%-2.8% of C, 0.5%-2.2% of Mn, 2.2%-2.6% of Mo, 15.2%-19.52% of Cr, 0.76%-1.34% of Si, 1.25%-1.63% of Ni and 0.15%-0.28% of Al. The high-chromium abrasion-resistant casting is high in hardness and strength, excellent in abrasion resistance and impact resistance, long in service life and very high in economic value and social benefit.