Method for induced growth of DAST and derivative single-crystal film thereof by using self-assembly monomolecular film
A technology for self-assembling single-molecule and single-crystal thin films, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of poor crystal thickness and orientation controllability, interference with crystal growth, easy formation of twin crystals, etc. Overcome the poor controllability of thickness and orientation, avoid twinning, and control the effect of orientation
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment
[0044] Such as figure 1 As shown, the main structure of this embodiment includes a beaker 1, a glass sheet 2, a DAST methanol solution 3, and a sealed box 4 with a humidity of 4%. Two pieces of glass slides 2 are inserted into the methanol solution 3 of DAST in the manner of leaning against the mouth of the beaker 1 close to each other.
[0045] The amorphous substrate used in this example is a glass flake with a size of 2.5cm×7.5cm, and dry DAST powder is used as a raw material. The specific growth process is as follows:
[0046] (1) select dry DAST powder to be dissolved in methanol solvent, be mixed with the methanol solution of DAST that the mass fraction of DAST is 1%, standby;
[0047] (2) Clean the two glass substrates: ultrasonically in acetone, ethanol and deionized water for 15 minutes respectively, and then blow dry with high-purity nitrogen;
[0048] (3) Prepare Piranha solution: slowly add concentrated sulfuric acid to 30% H2O according to the volume ratio of 7:...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com