Polysilicon production method capable of controlling the growth direction of polysilicon

A polysilicon growth and production method technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of inability to effectively control the growth direction of polysilicon 600, and the inability to effectively control the area

Active Publication Date: 2016-03-16
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

Although the above manufacturing method can optimize the crystallization effect by adjusting the parameters of the laser, it cannot effectively control the growth direction of the polysilicon 600 during the annealing process, and thus cannot effectively control the region where the grain boundary appears

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  • Polysilicon production method capable of controlling the growth direction of polysilicon
  • Polysilicon production method capable of controlling the growth direction of polysilicon
  • Polysilicon production method capable of controlling the growth direction of polysilicon

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Embodiment Construction

[0036] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0037] see Figure 2 to Figure 10 , the present invention provides a polysilicon production method capable of controlling the growth direction of polysilicon, comprising the following steps:

[0038] Step 1, depositing and forming a first buffer layer 20 on the substrate 10 .

[0039] The refractive index of the first buffer layer 20 is 1.7-2.1. In this embodiment, the refractive index of the first buffer layer 20 is preferably 1.9. Further, the first buffer layer 20 is made of silicon nitride (SiN x ) formed by deposition.

[0040] The substrate 10 is a glass substrate or a plastic substrate.

[0041] Step 2, forming a lens-like structure 22 on the surface of the first buffer layer 20 through a photomask process.

[0042] In this step, r...

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Abstract

The present invention provides a polysilicon fabrication method that can control a growth direction of polysilicon, comprising the following steps: step 1, depositing and forming a first buffer layer (20) on a substrate (10); step 2, forming a lens-like structure (22) on a surface of the first buffer layer (20) through a photo masking process; step 3, depositing and forming an amorphous silicon layer (40) on the first buffer layer (20) with the lens-like structure (22) formed on the surface; step 4, cleaning the amorphous silicon layer (40); step 5, using a strong light (50) to illuminate the amorphous silicon layer (40) from a side of the substrate (10) so as to make seed crystals be generated at a bottom of the amorphous silicon layer (40); and step 6, performing laser annealing processing on the amorphous silicon layer (40) with the seed crystals generated so as to make amorphous silicon in the amorphous silicon layer (40) crystallize and form a polysilicon layer (70). The present invention can control the growth direction of the polysilicon.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a polysilicon manufacturing method capable of controlling the growth direction of polysilicon. Background technique [0002] In recent years, the display technology has developed rapidly, and the flat panel display is very different from the traditional video image display with its completely different display and manufacturing technology. The traditional video image display is mainly cathode ray tube CRT (Cathoderaytubes); the main difference between the flat panel display and it is the change in weight and volume (thickness), usually the thickness of the flat panel display does not exceed 10cm, of course there are other differences, Such as display principles, manufacturing materials, processes, and various technologies in video and image display drivers. [0003] Flat panel displays have the characteristics of complete planarization, lightness, thinness, and power saving, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3205
CPCH01L21/02675H01L21/02422H01L21/02532
Inventor 张翔
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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