44 results about "X-ray lithography" patented technology

The present invention provides combining the advantages of hybrid resist with the unique properties of x-ray lithography to form high tolerance devices with x-ray pitch and to provide a means for varying the space width and fine tuning to account for process variations. Accordingly, a space width in the hybrid resist can be selectively printed by varying the mask-wafer gap distance, allowing more versatile structures to be formed and adjustments to be made for process changes such as resist composition and ion implant levels.

The invention discloses a photoetching mask structure for the aeration of X-ray. The structure, from the bottom to top, sequentially consists of a metallic film in low atomic number, a polyimide film and a metallic absorber figure in high atomic number. The invention simultaneously discloses a method for preparing the photoetching mask structure. By utilizing the method, because of the adoption of the multi-layer film structure formed by metal aluminum in low atomic number, the polyimide and the metallic absorber in high atomic number, the photoetching mask structure can be used for the X-ray photoetching on the level of micron, deep submicron and nanometer. Compared with the inorganic film based mask, the photoetching mask structure has the advantages of low cost, simple process flow and difficult cracking; and compared with the organic film based mask, the photoetching mask structure has the advantages of high mechanical strength, hard deformation and good heat conducting performance.

A method for preparing integrated lens includes forming windows on substrate and using it as mask, preparing titanium plate being used as X ray optical etching substrate, using NaOH / H2O2 to carry out surface treatment and forming X ray optical etching substrate; filling silicon rubber into sample structure for curing process filling aluminium material into rubber mould being taken off, separating out mould after curing; including scaled bottom plate, lens main body and air gap on the retained structure.

The invention provides an X-ray broadband energy selection device. The X-ray broadband energy selection device comprises a nano-rod array, a thin metal layer and a supporting film, wherein the nano-rod array is manufactured on the upper surface of the thin metal layer and the supporting film is pasted to the lower surface of the thin metal layer. The energy selection device has the advantages of small infinitesimal element size and high energy selection precision and can be applied to imaging diagnosis apparatuses with a space resolution of a few microns to realize band spectrum imaging diagnosis. The invention also provides a method for manufacturing the X-ray broadband energy selection device. The method comprises the steps of punching a polycarbonate material by using the X-ray lithography technology, and growing nano-rods in the holes by using the electrochemical deposition method to form nano-rods with great rod body perpendicularity and side wall roughness. Square nano-rod arrayswith any high aspect ratio can be manufactured according to the characteristics of to-be-selected energy sections. Band-pass energy selection in any energy section range in a soft X-ray range can berealized by flexibly design the height of the nano-rods, the material and the thickness of the thin metal layer and the grazing incident angle of X-rays.

A lithographic method for producing high aspect ratio silica micro-structures having the steps of: providing a carrier substrate with a confinement boundary placed on the carrier substrate; placing the SOG material within the confinement boundary and soft baking at a temperature above its glass transition temperature; forming a pattern of interest on the soft baked SOG material by x-ray lithography; and heating the SOG material until it is substantially converted to a silica-like oxide.