Poly p-hydroxystyrene based chemically amplified one-component photoresist material, and synthetic method and application thereof

A technology of hydroxystyrene and hydroxyl, which is applied in the field of polymer photosensitive imaging materials, can solve the problems of inconsistent acid distribution, limited compatibility, affecting resolution and line edge roughness, etc.

Inactive Publication Date: 2012-10-10
BEIJING NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The traditional chemically amplified photoresist needs to add a small molecule acid generator, which is limited by its compatibility with the film-forming resin. Dur

Method used

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  • Poly p-hydroxystyrene based chemically amplified one-component photoresist material, and synthetic method and application thereof
  • Poly p-hydroxystyrene based chemically amplified one-component photoresist material, and synthetic method and application thereof
  • Poly p-hydroxystyrene based chemically amplified one-component photoresist material, and synthetic method and application thereof

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Embodiment Construction

[0020] Polyparahydroxystyrene (PHS) is the main deep ultraviolet (248nm) photoresist film-forming resin material, there are industrial products in foreign markets (such as Japan), and domestic enterprises are also trying to produce, used in the present invention PHS is repackaged for import. The number average molecular weight of poly-p-hydroxystyrene industrial products is generally in the range of 2000-20000, and its degree of polymerization n is generally in the range of 16-160. Hydrogen chloride is produced by concentrated sulfuric acid and sodium chloride under heating conditions and passed into the reaction system through a buffer bottle. Sodium or potassium salts of strong acids used include sodium triflate, sodium p-toluenesulfonate, sodium benzenesulfonate, potassium nonafluorobutanesulfonate, potassium perfluorooctanesulfonate. Trifluoromethanesulfonic acid has the strongest acidity and is most beneficial to the decomposition reaction of the catalytic protection gro...

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Abstract

The present invention relates to a novel poly p-hydroxystyrene (PHS) based chemically amplified one-component photoresist material and a synthetic method thereof. The derivative of the PHS contains illumination acid generating group on portion of benzene rings, and part of the phenolic hydroxyl groups are protected by acid decomposable protecting groups. During exposure, acid producing groups produce a strong acid, which catalyzes decomposition of the protecting groups under postbaking conditions to release phenolic hydroxyl group; therefore, alkaline solubility of the exposure section is increased, and developing and imaging can be realized in dilute alkaline solution. The derivative of the PHS can be used as a novel chemically amplified one-component photoresist material and be used as a chemically amplified photoresist in deep ultraviolet lithography, electron beam lithography and other next generation super-large-scale integration processing technology, such as extreme ultraviolet lithography and X-ray lithography, etc.

Description

technical field [0001] The technical field of the invention belongs to the field of polymer photosensitive imaging materials, that is, a new type of chemically amplified single-component photoresist and its synthesis method. Specifically, the photosensitive agent is based on poly-p-hydroxystyrene (PHS), and a sulfonium salt acid-generating group is introduced on the benzene ring, and the hydroxyl group is partially protected by a protecting group. When exposed, the onium salt group decomposes to generate a strong acid, which catalyzes the decomposition of the protective group, thereby realizing the difference in solubility between the exposed area and the non-exposed area in alkaline water, and can be imaged by dilute alkaline water development, so it can be used as a novel chemical Amplified single-component resist material, which can be used as photoresist (photoresist) for deep ultraviolet lithography, electron beam lithography, extreme ultraviolet (EUV) lithography and oth...

Claims

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Application Information

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IPC IPC(8): C08F12/24C08F8/14C08F8/42C08F8/34G03F7/039G03F7/075
CPCC08F8/12C08F12/30G03F7/00C08F12/24C08F8/14C08F8/34G03F7/0045G03F7/0046G03F7/0392G03F7/0758
Inventor 王力元刘娟
Owner BEIJING NORMAL UNIVERSITY
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