127 results about "Metallic grating" patented technology

In a hybrid-type polarizer having a reflective-type polarizing filter and a color filter, a method of manufacturing the hybrid-type polarizer and a display device having the hybrid-type polarizer, the hybrid-type polarizer includes a base member and a polarizing color filter member. The polarizing color filter member includes a plurality of metal gratings in a plurality of regions of the base member. The metal gratings in the regions have different sizes from each other. Each of the metal gratings transmits a first portion of an incident light and reflects a second portion of the incident light. The invention improves image display quality and lowers the manufacturing cost.

This invention relates to a high efficiency solar cell comprising: (a) a top surface of an anti-reflective coating layer; (b) an engineered photonic crystal material layer, (c) an active photovoltaic layer; (d) a photonic crystals with an integrated diffraction grating; (e) a metallic diffraction grating reflective layer, and (f) a metallic back reflector;whereby normally incident light striking the surface of the solar cell passes through the anti-reflective coating and the engineered photonic crystal material layer and is absorbed by active photovoltaic layer thereby generating electrical energy and obliquely incident light is reflected and diffracted by the engineered photonic crystal material layer, the one dimensional photonic crystal layer, the metallic grating reflective layer and the metallic back reflector to the active photovoltaic layer thereby generating electrical energy.

The present invention relates to a solar cell with an electroplated metal grid. One embodiment of the present invention provides a method for fabricating solar cells. During operation, an anti-reflection layer is deposited on top of a semiconductor structure to form a photovoltaic structure, and a front-side electrode grid comprising a metal stack is formed on top of the photovoltaic structure. The metal stack comprises a metal-adhesive layer comprising Ti or Ta, and a conducting layer comprising Cu or Ag situated above the metal-adhesive layer.

A display device for driving liquid drops to move on the basis of an electrowetting effect is characterized by comprising a lower substrate, an electrode plate, a nano-metal grating, a plurality of liquid drops, a super-hydrophobic coating layer, a dielectric layer, an electrode array and an upper substrate in sequence from bottom to top. A cofferdam is added on the periphery between the upper substrate and the lower substrate to form a sealed chamber, the chamber is filled with a second fluid insoluble with the liquid drops, and the single liquid drops in a chamber between the electrode array and the electrode plate which are parallel to each other at least cover two adjacent electrodes of the electrode array. The characteristic that the nano-metal grating is extremely sensitive to changes of the refractive index of an adjacent material is utilized, color filtering is finished by changing the material refractive index, active modulation of transmission and reflection spectrums of the nano-metal grating is achieved, and simultaneously due to the hydrophobic characteristic of the nano-metal grating structure, the electrowetting display modulation contrast and speed can be improved.

A waveguide coupling probe (10) for sending light into an optical waveguide on a substrate or for receiving light from an optical waveguide on a substrate is provided, the waveguide coupling probe comprising an optical element (11) for guiding the light in a propagation direction, the optical element (11) having a facet (15) where the light enters or exits the optical element (11) and means for coupling the light between the optical element (11) and the waveguide. A waveguide coupling probe (10) according to the present invention is characterized in that the light coupling means are formed on the facet (15) and comprise a diffraction structure (14). In a preferred embodiment the optical element (11) may be an optical fiber and the diffraction structure may be a strong diffraction structure, e.g. a metal grating structure. When bringing the waveguide coupling probe (10) in the vicinity of a waveguide on a substrate, the light that is guided by the waveguide may be diffracted into the optical element (11). Alternatively, light from the optical element (11) may be coupled into the waveguide. When using the waveguide coupling probe (10) for coupling light between the optical element (11) and a waveguide, the waveguide coupling probe may be positioned out of the plane of the waveguide. Furthermore a method is provided for forming an optical structure, e.g. a metal grating structure, on a facet (15) of an optical element (11).

An X-ray metal grating structure of the present invention has a grating region in which a plurality of first structural portions are periodically provided, wherein an air gap is formed between each of the plurality of first structural portions and a second structural portion as a remaining part of the grating region other than the plurality of first structural portions. Thus, the X-ray metal grating structure of the present invention is formed as a grating structure having high flatness. A production method therefor comprises a step of forming the air gap between the first structural portion and the second structural portion. Thus, the production method makes it possible to produce an X-ray metal grating structure having high flatness. The present invention further provides an X-ray metal grating unit and an X-ray imaging device each comprising the X-ray metal grating structure.

According to one aspect, the invention relates a spectral band-pass filter, which is optimized for the transmission of an incident wave at at least a first given central wavelength λ0, and which includes: a metal grating having a thickness (t) greater than approximately λ0 / 50 and including at least a first set of substantially identical, parallel slots having a width (W) less than around λ0 / 10, and being spaced apart periodically or quasi-periodically according to a first period that is less than said first central el wavelength, a layer of dielectric material having a thickness (h) and a given refractive index (ng), which is coupled to the metal grating to form a waveguide for the waves diffracted by the grating, said first period of the grating being designed such that only orders 0 and ±1 of a wave having normal incidence and a wavelength λ0 are diffracted in the layer of dielectric material, the assembly of the dielectric layer and grating being suspended, during use, in a fluid having a refractive index of close to 1.

The invention discloses an integrated semiconductor laser of a 2-micrometer single-mode high-power GaSb-based metal grating master oscillator power amplifier and a fabrication method of the integrated semiconductor laser. The semiconductor laser comprises a substrate, an epitaxial structure, a gain amplification region, a master oscillator region, a metal grating region and light limitation grooves, wherein the epitaxial structure is grown on the substrate and comprises an N-type lower contact layer, an N-type lower limitation layer, a lower waveguide layer, an active region, an upper waveguide layer, a P-type upper limitation layer and a P-type upper contact layer from bottom to top, the gain amplification region is arranged at the front part, namely an emergent light part of the semiconductor laser and is of an isosceles trapezoid structure formed by downwards etching the P-type upper contact layer, the master oscillator region is arranged at the rear part of the gain amplification region and is of a ridged waveguide structure formed by downwards etching the P-type upper contact layer and the P-type upper limitation layer, the metal grating region is arranged at the rear part of the master oscillator region and is of a periodic grating structure formed on the surface of the upper waveguide layer, the light limitation grooves are symmetrically arranged at the two sides of ridged waveguide structure, and the light limitation grooves and the ridged waveguide structure are arranged in an inclining manner.

The present invention provides a liquid crystal display device, which includes a liquid crystal panel (1) and a collimated exit light backlight module (3). The liquid crystal panel (1) includes a CF substrate (11), an array substrate (13), and a liquid crystal layer (12). The CF substrate (11) has an upper surface on which an upper polarizer film (15) is arranged. The array substrate (13) has a lower surface on which a lower polarizer film (17) is arranged. The upper polarizer film (15) includes a view angle diffusion film (19) arranged thereon. The collimated exit light backlight module (3) includes two backlight sources (31), a metallic grating reflector plate (33), a wire grid polarizer (35), and an optic film assembly (37). The two backlight sources (31), the metallic grating reflector plate (33), and the wire grid polarizer (35) collectively define a light guide chamber (39). The liquid crystal display device greatly improves light transmittance and light extraction efficiency and also effectively overcomes the issue of color deviation at a large view angle.

A surface reflection type phase grating 21 in which first metal film 23 is formed on a substrate 22, metal gratings 24 of a rectangular cross-sectional shape having a thickness d for which first-order diffraction becomes maximum by second metal film 24 formed of a material differing from that of the first metal film 23 is formed thereon, and transparent dielectric film 26 formed of SiO2 is further formed on the surfaces of the metal gratings 24 and the first metal film 23 exposed among them, and a displacement measuring apparatus adopting the surface reflection type phase grating.

An optical filter based on graphene comprises an optical coupling structure. The optical coupling structure comprises an electrolyte layer, a metal electrode, a graphene strip array, a dielectric layer, a metal optical grating and a substrate. The electrolyte layer and the metal electrode are provided with adjusting devices for top gate voltage. A Fabry-Perot microcavity array composed of the graphene strip array, the dielectric layer and the metal optical grating is located on the substrate, and the electrolyte layer and the metal electrode are located on the same plane above the Fabry-Perot microcavity. Based on the micro-nano etching process technology and the multiplayer film technology which are extremely mature at present, the technological process is not complex, and operation is easy. Compared with a traditional filter with the same frequency band, the optical filter has the advantage that the size of a coupled component is greatly reduced due to introduction of graphene. The optical filter frequency is regulated by adjusting the Fermi level of graphene through grid voltage, active control over light is achieved, the needed power consumption is small, the quality factor is large, the response speed is high, and very wide working frequency is achieved.

A wire-grip polarizer (“WGP”), and a panel having said WGP is provided. The WGP is mounted on an absorption layer. The absorption layer is mounted on a substrate. The substrate is brightly colored. The WGP includes a plurality of gratings formed of a metallic element. Each of the gratings is spaced apart from the other so as to form a waveguide. The WGP is configured to transmit S-Polarized light and reflect P-polarized light. The A thin film layer may be disposed on each of the metallic gratings. The thin film layer is configured to generate a resonance so as to modify the reflectivity of P-polarized light so as to reduce veiling glare and maintain the brightness of the substrate.

The invention discloses an optical coupling unit of a quantum well long-wave infrared detector grating waveguide micro-cavity, structurally characterized by adopting an interlayer structure of a metal back reflection layer, a dielectric layer and a metal grating. The optical coupling structure has the advantages that (1) the coupling efficiency of incoming light is improved by adopting a metal array structure; (2) the electric field intensity of a quantum well is greatly improved by limiting an optical field to propagate in a mini space between the metal grating layer and the metal back reflection layer; (3) a vertical electric field component has favorable evenness in a longitudinal direction by adopting a similar microstrip antenna structure; (4) the metal structure is not only an optical coupling unit, but also is used an upper electrode or a lower electrode; and (5) the optical coupling unit is easy to manufacture and suitable for manufacturing photosensor elements with large area arrays.

The present invention relates to a strong distributed feedback semiconductor laser. More specifically, the invention implements a top optical waveguide (2) for semiconductor lasers having a surface metallic grating (5) making it possible to obtain a stable and controlled distributed feedback, using a simple and robust technology. In the inventive laser, which comprises an active area (1) having an effective refractive index (neff) in which a light wave is propagated with a wavelength (λ), the top waveguide (2) is made of a weakly-doped material and the periodic grating (5) depth (p) is[λ4×neff]plus or minus 50%, the low precision needed being one of the advantages of the inventive laser.

A direct backlight module is disclosed, and includes: a substrate having a driving circuit layer; multiple blue LED chips disposed on the substrate, and the multiple blue LED chips are electrically connected to the driving circuit layer; an optical conversion layer covered on the multiple blue LED chips, wherein the optical conversion layer includes a colloidal material, multiple phosphor particles and multiple haze particles disposed in the colloidal material, the optical conversion layer converts a blue light emitted from the multiple blue LED chips into a white light; and a transparent dielectric layer and a metal grating layer sequentially formed on the optical conversion layer. A liquid crystal display device is also disclosed. The direct backlight module can reduce the thickness of the liquid crystal device, which is beneficial to realize a thin and narrow-frame liquid crystal display device.

A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a transparent conductive layer, a second electrode and a metal grating. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The transparent conductive layer is located on a surface of the second semiconductor layer away from the substrate. The second electrode is electrically connected to the transparent conductive layer. The metal grating is located on a surface of the transparent conductive layer away from the substrate. The metal grating is a two-dimensional array of a plurality of metal micro-structures.

The invention relates to a sensor used for testing the value of the gas refracting index, which is characterized in that the structure consists of a metal optical grating layer, an air gap separation layer and a metal substrate layer. When the incoming wavelength is ranged from 1548 to 1553 nanometers and the incoming angle is ranged from 22 to 24 degrees, the sensitivity of the gas sensor is as high as 2800 nanometers / RIU. Particularly, when the period of the metal optical grating is 1100 nanometers, the thickness of the optical grating is 20 nanometers, and when the air gap separation layer thickness is 30 nanometers, the flexibility of the sensor is as high as 3050 nanometers / RIU.

The invention dielectric body superlattice optical filter and the manufacturing method, the filter is made up by inserting a single domain dielectric body crystal plate in two orthogonal polarizing discs. The upper and subjacent plates are parallel, the angle between the normal line of the upper and subjacent flats and the self-polarizing direction is theta, the upper flat is set periodically with metal grid positive electrodes, the subjacent flat has a negative electrode, the period of the metal grid electrode lambda=2d, the width of the metal grid electrode d=lambda 0 / 2(n0-ne); the amounts of the metal grid electrodes N =1.60 lambda 0 / (2v+1). delta lambda 1 / 2.

The present invention provides a liquid crystal display device, which includes a liquid crystal panel (1) and a collimated exit light backlight module (3). The liquid crystal panel (1) includes a CF substrate (11), an array substrate (13), and a liquid crystal layer (12). The CF substrate (11) has an upper surface on which an upper polarizer film (15) is arranged. The array substrate (13) has a lower surface on which a lower polarizer film (17) is arranged. The upper polarizer film (15) includes a view angle diffusion film (19) arranged thereon. The collimated exit light backlight module (3) includes two backlight sources (31), a metallic grating reflector plate (33), a reflective polarizing beam splitter (35), and an optic film assembly (37). The two backlight sources (31), the metallic grating reflector plate (33), and the reflective polarizing beam splitter (35) collectively define a light guide chamber (39). The liquid crystal display device greatly improves light transmittance and light extraction efficiency and also effectively overcomes the issue of color deviation at a large view angle.

The invention discloses a metal grating coupling SPR (Surface Plasmon Resonance) detection chip and a manufacturing method thereof. The detection chip comprises a transparent substrate, a metal grating coupling layer formed on the substrate, and a microfluid layer covered on the metal grating coupling layer. The manufacturing method comprises the following steps: applying a laser hologram photoetching process to form strip gratings on photoresist uniformly coated on the surface of the substrate, forming a metal film by a metal film coating process, further stripping the photoresist to obtain a metal grating coupling layer, and bonding the prepared microfluid layer and the metal grating coupling layer to obtain a target product. According to the invention, the laser hologram photoetching process is applied in the SPR detection chip, and in a grating manufacturing process, rapid and large-area exposure is available to obtain periodic striped patterns, i.e. one-dimensional gratings, so the process time and cost are greatly reduced, which is conductive to industrialized mass production.

The invention provides a sensing element and a device thereof for determining the value of gas refractive index, and the sensing element is characterized by comprising a laser, an optical fiber, a detection cavity, a metal grating and a spectrum analyzer. A light source emitted from the laser is coupled in the optical fiber, is led in the detection cavity, and is subjected to beam expansion by a beam expander to reach the metal grating via an optical path, and then reflects on the metal grating surface; and the reflecting light is coupled in the optical fiber by a coupler and is led into the spectrum analyzer. The gas sensing device designed by the invention is characterized by high measurement precision, safe application, real-time detection and remote transmission, small volume of sensing parts, integratability and no need of power supply.

There is set forth herein in one embodiment, a structure including a metallic grating having a grating pattern, the metallic grating including a critical dimension. The metallic grating can output a spectral profile when exposed to electromagnetic radiation, the spectral profile having a feature. The grating pattern can be configured so that a change of the critical dimension produces a shift in a value of the feature of the spectral profile. A method can include propagating input electromagnetic radiation onto a metallic grating having a two dimensional periodic grating pattern and measuring a critical dimension of the metallic grating using output electromagnetic radiation from the metallic grating.

The invention relates to the technical field of terahertz, in particular to a closed periodic metal grating SSP terahertz filter and a tuning method. The terahertz filter comprises a metal cover plateand a periodic metal grating of a rectangular structure, wherein the metal cover plate is a flat plate with constant thickness and is arranged right above the periodic metal grating in parallel at aninterval, and the height of the metal cover plate can be flexibly set according to the central frequency and the bandwidth of a stop band of the terahertz filter. Compared with the prior art, the closed periodic metal grating SSP terahertz filter provided by the invention can realize tuning of SSP mode transmission characteristics on the surface of the periodic metal grating only by changing theheight of the metal cover plate, and has the advantages of simple and compact structure and dynamic tunability.

The invention belongs to the technical field of photoelectric sensing and provides an embedded grating structure-based narrow-band near-infrared thermo-electronic photoelectric detector. The inventionaims to solve the problem of the low responsivity of a photoelectric detector in the prior art. The embedded grating structure-based narrow-band near-infrared thermo-electronic photoelectric detectorcomprises a silicon substrate and a metal grating, a titanium film is arranged between the metal grating and the silicon substrate so as to serve as an adhesive layer; the metal grating is connectedto a top conductive electrode; and a bottom conductive electrode is arranged on a silicon back surface. The metal grating is embedded into the silicon substrate, so that the light absorption efficiency of metal and the generation rate of hot electrons are improved, and the thermalization loss of the hot electrons is reduced; a Schottky interface on the side surface of the grating is additionally adopted, so that the collection efficiency of the hot electrons transferred into silicon is improved, and therefore, the responsivity of the photoelectric detector is improved; and the response wavelength of the detector can be changed by adjusting the period of the metal grating, so that the wavelength-adjustable near-infrared photoelectric detector is achieved.

The present invention relates to a strong distributed feedback semiconductor laser. More specifically, the invention implements a top optical waveguide (2) for semiconductor lasers having a surface metallic grating (5) making it possible to obtain a stable and controlled distributed feedback, using a simple and robust technology. In the inventive laser, which comprises an active area (1) having an effective refractive index (neff) in which a light wave is propagated with a wavelength (λ), the top waveguide (2) is made of a weakly-doped material and the periodic grating (5) depth (p) is[λ4×neff]plus or minus 50%, the low precision needed being one of the advantages of the inventive laser.

The invention discloses a blue light band asymmetric metamaterial polarization modulator. A second metal grating layer is prepared on the top surface of a silicon-based layer through an electron beamevaporation deposition method and an electron beam etching process; a second low-refractive-index dielectric material layer is prepared on the top surface of the second metal grating layer through anelectron beam evaporation deposition method; a graphical high-refractive-index dielectric material polarization conversion layer is prepared on the top surface of the second low-refractive-index dielectric material layer through an electron beam evaporation deposition method and an electron beam etching process; a first low-refractive-index dielectric material layer is formed on the top surface ofthe patterned high-refractive-index dielectric material polarization conversion layer through an electron beam evaporation deposition method, and a first metal grating layer is formed on the top surface of the first low-refractive-index dielectric material layer through the electron beam evaporation deposition method and an electron beam etching process; according to the invention, the problems of low transmissivity and low polarization conversion rate can be solved, and the device can also realize a bidirectional asymmetric transmission function.

The invention discloses a method for preparing metal nano stripes. The method comprises the following steps that a target material is disposed in a way that a target surface of the target material and a surface of a horizontal substrate form an angle theta; the surface of the horizontal substrate is bombarded vertically by ion beams from an ion beam gun in at least one inert gas as working gas; the target material is bombarded by ion beams from ion beam gun in a way that the ion beams and the normal of the target surface of the target material form an angle theta; the substrate is bombarded by ion beams reflected by the target surface in a way that the reflected ion beams and the normal of the substrate form an angle of 180 degree to 2-theta and simultaneously, the substrate moves horizontally; and when the previous step is finished, metal nano stripes are obtained, wherein the target material has a rectangular structure and surfaces of the target material are smooth. The method for preparing self-assembled metal micro-nano stripes has the advantages of low cost, good controllability and feasibility of industrialization, and can be utilized for the fields of productions of metal grating polarizers, nonlinear optical devices, plasma photonic chips, LED luminous efficiency reinforced metal gratings and micro-nano magnetic structures.

A method and a system for the enhancement of the sensitivity in surface plasmon resonance (SPR) sensors based metallic grating by exploiting the conical configuration is presented. We consider the propagation of surface plasmon polaritons (SPPs) excited by light from the visible to infrared spectrum range, incident on a plasmonic grating at different directions by varying both the zenith and azimuthal angles. For specific azimuthal angles, SPPs propagate in the grating plane perpendicular to the incident light momentum. This is the condition that allows increasing the number of different excited SPPs modes largely. We exploit this effect to increase the sensor sensitivity with the change of refractive index of thin film on the plasmonic grating surface. Polarization effects also contribute to a further modes enhancement and increase the sensitivity. A scheme for a lab-on-chip implementation of a system that allows a parallel detection in microfluidic channels has been shown.

The invention discloses a super-absorption structure based on black phosphorus nano-strip arrays and a metal grating slit. The super-absorption structure comprises a metal reflecting layer, a dielectric layer, black phosphorus nano-strip arrays and a metal grating slit structure. The metal reflecting layer is made of an Al material; the dielectric layer is made of a SiO2 material; the black phosphorus nano-strip arrays are distributed on the dielectric layer at intervals, and the number of black phosphorus layers is a single number; a metal grating slit structure is formed by the distance between a left metal grating and a right metal grating, and the metal gratings are made of a Au material. Surface plasmon polariton waves can be restrained by modulating an absorption curve through structural parameters, and the light absorption of black phosphorus under a mid-infrared band is enhanced through a light transmission enhancement effect generated by the metal grating slit structure and alocal surface plasmon resonance (LSPR) effect generated by the black phosphorus nanostrip arrays. Therefore, the application of BP-based plasmon in photoelectric detection and sensing in a mid-infrared region is paved.

The invention belongs to the field of optical devices. In order to improve the modulation depth and bandwidth of the modulator, the invention provides a broadband transmission type infrared light modulator based on graphene plasmas. The infrared light modulator comprises a substrate, the substrate is covered with a graphene modulation layer, the modulation layer is provided with a non-metal grating layer through coating-etching, the non-metal grating layer is provided with a metal grating layer through coating, and the two sides of the substrate are provided with a first electrode and a secondelectrode through coating respectively. Graphene is coupled with a non-metal grating layer; the excellent polarization characteristic of the metal grating and the field constraint capability for further enhancing the graphene local surface plasmon polariton are utilized; the structure has strong reflection on TE linear polarization incident light, transmission modulation with high modulation depth in a broadband range can be realized on TM linear polarization incident light, and the characteristic can realize a modulation function with high modulation depth and wide modulation bandwidth on transmission light when natural light is incident.