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Super-absorption structure based on black phosphorus nano-strip arrays and metal grating slit

A metal grating and nano-stripe technology, applied in the field of ions, can solve the problems of few researchers, and achieve the effect of high flexibility, wide application area and enhanced absorption capacity

Active Publication Date: 2020-05-01
XIDIAN UNIV
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Problems solved by technology

But in the mid-infrared band (10-30μm), its absorption rate basically does not exceed 50%, and few researchers have carried out further research on improvement

Method used

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  • Super-absorption structure based on black phosphorus nano-strip arrays and metal grating slit
  • Super-absorption structure based on black phosphorus nano-strip arrays and metal grating slit
  • Super-absorption structure based on black phosphorus nano-strip arrays and metal grating slit

Examples

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Embodiment

[0029] Example: Fabrication of a superabsorbent structure based on black phosphorus nanobar arrays and metal grating slits.

[0030] refer to image 3 , the implementation steps of this example are as follows:

[0031] Step 1: Deposit Al metal layer

[0032] Using plasma-enhanced chemical vapor deposition process, with solid Al (99.99% purity) as the evaporation source, the dielectric substrate was heated to 380°C for vacuum degassing for 3 hours, and the air flow was maintained for 15 to 90 minutes during ventilation, and the pressure was between 0.4 and 2.4 milliliters. Between bars, the plasma is formed by 13.6MHz radio frequency power, and finally the dielectric substrate is etched away to form a 300nm thick Al metal reflective layer 1, such as image 3 (a).

[0033] Step 2: Growing SiO 2 Dielectric layer

[0034] Then use the thermal oxidation process, the method of combining dry and wet oxygen, and grow SiO at a temperature of 900 degrees. 2 Oxide dielectric layer ...

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Abstract

The invention discloses a super-absorption structure based on black phosphorus nano-strip arrays and a metal grating slit. The super-absorption structure comprises a metal reflecting layer, a dielectric layer, black phosphorus nano-strip arrays and a metal grating slit structure. The metal reflecting layer is made of an Al material; the dielectric layer is made of a SiO2 material; the black phosphorus nano-strip arrays are distributed on the dielectric layer at intervals, and the number of black phosphorus layers is a single number; a metal grating slit structure is formed by the distance between a left metal grating and a right metal grating, and the metal gratings are made of a Au material. Surface plasmon polariton waves can be restrained by modulating an absorption curve through structural parameters, and the light absorption of black phosphorus under a mid-infrared band is enhanced through a light transmission enhancement effect generated by the metal grating slit structure and alocal surface plasmon resonance (LSPR) effect generated by the black phosphorus nanostrip arrays. Therefore, the application of BP-based plasmon in photoelectric detection and sensing in a mid-infrared region is paved.

Description

technical field [0001] The invention belongs to the field of plasma technology and realizes a compact high-absorption structure of plasmons at mid-infrared frequencies. Background technique [0002] In recent years, plasmons have attracted a great deal of interest due to their potential to overcome the diffraction limit and manipulate light at subwavelength scales. Localized surface plasmon resonances (LSPRs) occurring at optical frequencies are highly confined to dielectric-dielectric interfaces and are widely used in on-chip optical integrated circuits, data storage, and biosensing applications. In recent years, strong light-matter interactions have been discovered in two-dimensional layered materials, including studies on plasmons. However, many two-dimensional materials cannot be used as materials for studying plasmonic devices due to the limitations of various characteristics. For example, graphene can offer unprecedented flexibility for the study of surface plasmon p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/00B81B7/04B81C1/00
CPCB81B7/04B81C1/00031G02B5/003G02B5/008
Inventor 刘艳黄炎韩根全郝跃
Owner XIDIAN UNIV
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