133 results about "Garnet crystals" patented technology

A phosphor (A) comprising a host material composed of a compound having a garnet crystal structure represented by the general formula (I):M1aM2bM3cOd  (I)(wherein M1 is a divalent metal element, M2 is a trivalent metal element, M3 is a tetravalent metal element containing at least Si, a is the number of 2.7 to 3.3, b is the number of 1.8 to 2.2, c is the number of 2.7 to 3.3, and d is the number of 11.0 to 13.0), and a luminescent center ion incorporated in the host material; a light emitting device (B) comprising the phosphor as a wavelength conversion material and a semiconductor light emitting element capable of emitting a light in the range of from ultraviolet light to visible light; and a display (C) and a lighting system (D) using the light emitting device (B) as a light source. The above phosphor can be readily produced, and can provide a light emitting device having a high color rendering property.

A material capable of producing a sintered body of cubic system garnet type Li7La3Zr2O12 as a solid electrolyte having specified ion conductivity by firing at relatively low temperature in short time. The material for the solid electrolyte is an oxide containing Li, La, Zr and Bi, and the oxide has a cubic system garnet crystal structure where La sites are partly or entirely substituted by Bi.

Scintillator compositions having a garnet crystal structure useful for the detection of high-energy radiation, such as X, beta, and gamma radiation, contain (1) at least one of terbium and lutetium; (2) at least one rare earth metal; and (3) at least one of Al, Ga, and In. Terbium or lutetium may be partially substituted with Y, La, Gd, and Yb. In particular, the scintillator composition contains both terbium and lutetium. The scintillators are characterized by high light output, reduced afterglow, short decay time, and high X-ray stopping power.

A temperature-gradient device for growing crystals with large area and a method of growing crystals. The device comprises a bell-like vacuum resistance oven, cone crucible and a heater in the oven, the crucible at the center of the oven, the heater comprising main cylinder heater of graphite and auxiliary cone heater with an irregular shape, vacuum system, UPS regulated power supply, two sets of controllable silicon trigger circuits, two sets of temperature controllers. The device could adjust automatically temperature gradient in growing crystals.The invention could grow complete nonsplitingcrystals with the size of more than 5 inch.

A method of depositing a coating is disclosed, which method calls for providing a substrate, and thermally spraying a ceramic powder thereon to form a coating. The ceramic powder has a garnet crystal structure phase, and the thermal spraying in turn forms a coating on the substrate that includes a garnet crystal structure phase.

A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.

The invention provides a synthetic melting body method of growing crystal, using pulling method to seed, shrink neck, and extend shoulder, as the growth at equal diameter, adopting soaking method and / or temperature gradient method. It can grow large-sized high-quality crystals, especially oxide crystals like sapphire substrate crystal, doped or undoped aluminum oxide crystal, aluminate crystal, etc. It has the advantages of adopting pulling, soaking and temperature gradient methods: able to grow large-sized crystals, a little pollution, and able to observe the liquid surface and the growing situation of crystal; able to use the original pulling devices; the crystal quality is good, and has low dislocation density and good integrity and optical uniformity, easy to industrialize.

The invention relates to a Czochralski growth method of a terbium gallium garnet (TGG) magneto-optical crystal, comprising the following steps: preparing a Tb3Ga5-xMxO12 polycrystal by liquid-phase coprecipitation and letting the TGG magneto-optical crystal grow by using a Czochralski method, wherein M represents one or two elements selected from Al or Fe. The method combines the advantages of the TGG crystal and a TAG crystal, lets an Al-doped TGG (Tb3Ga5-xAlxO12, x=0-0.5) magneto-optical crystal, an Fe-doped TGG (Tb3Ga5-xFexO12, x=0-0.5) magneto-optical crystal or a TGG double doped with Al and Fe (Tb3Ga5-x-yAlxFeyO12, x+y=0-0.5) magneto-optical crystal grow by using the Czochralski method, the growth process is simple and easy to industrialize, the Verdet constant of the TGG magneto-optical crystal is 10-20 % higher than that of the TGG crystal, the crystal size of the TGG magneto-optical crystal is several times higher than that of the TAG crystal, and the TGG magneto-optical crystal is an optical isolator material having excellent performance.

A polycrystalline scintillator for detecting soft X-rays, which comprises Ce as a light-emitting element and at least Y, Gd, Al, Ga and O, and has a garnet crystal structure, and a composition represented by the general formula of (Y1−x−zGdxCez)3+a(Al1−uGau)5−aO12, wherein 0≦a≦0.1, 0.15≦x≦0.3, 0.002≦z≦0.015, and 0.35≦u≦0.55, with 0.05-1 ppm by mass of Fe and 0.5-10 ppm by mass of Si by outer percentage, a ratio μ50 / μ100 of 3 or more, wherein μ50 is an absorption coefficient of X-rays at 50 keV, and μ100 is an absorption coefficient of X-rays at 100 keV, and afterglow of 800 ppm or less after 3 ms from the termination of X-ray irradiation.

A phosphor (A) comprising a host material composed of a compound having a garnet crystal structure represented by the general formula (I):M1aM2bM3cOd  (I)(wherein M1 is a divalent metal element, M2 is a trivalent metal element, M3 is a tetravalent metal element containing at least Si, a is the number of 2.7 to 3.3, b is the number of 1.8 to 2.2, c is the number of 2.7 to 3.3, and d is the number of 11.0 to 13.0), and a luminescent center ion incorporated in the host material; a light emitting device (B) comprising the phosphor as a wavelength conversion material and a semiconductor light emitting element capable of emitting a light in the range of from ultraviolet light to visible light; and a display (C) and a lighting system (D) using the light emitting device (B) as a light source. The above phosphor can be readily produced, and can provide a light emitting device having a high color rendering property.

The invention discloses the crystallization technology domain, a kind of pure static state double heating temperature gradient method crystal growth installment, including the bell glass type perfect vacuum unit crystal stove, in has 4 electrodes, 2 pays the plate, the double heating element, provides the double power source, double controls the warm heating system. The heating element constitutes by the rectangular undulation plank auxiliary heating element. Advocates auxiliary heating element on, underneath and all around is equipped with the good heat preservation effect on hot back plate, gets down the hot back plate and the side shield establishment, advocates in space which the auxiliary heating element surrounds, by has seed crystal the trough round the cone-shape crucible constitution crystal growth room. The invention crystal growth installment, the airtight performance good, the hot field is stable. Suits to grows the large diameter center, the high temperature crystal, like sapphire crystal, yttrium aluminum garnet crystal, aluminum ytrium crystal, as well as calcium fluoride and so on crystal and so on.

The invention provides a preparation method for transforming yttrium aluminum garnet doped ceramic into a single crystal. The method aims at providing a solid-state crystal growth method with strong controllability and uniform yttrium aluminum garnet doped crystal components. The method is realized through the following technical scheme: at least one of silicon dioxide, magnesium oxide and lithium fluoride is added in nanometer yttrium aluminum garnet doped ceramic powder according to 0.2% to 1% of powder weight to serve as a sintering additive and then the sintering additive takes alcohol as a medium ball mill with an agate ball; heating is carried out under flow oxygen atmosphere at a temperature of 600 to 800 DEG C, the powder is placed into a stainless steel grinding tool again to form a ceramic biscuit in a dry-pressed manner, furthermore, cold isostatic pressing is carried out on the ceramic biscuit, and heat preservation is implemented under the vacuum degree higher than 10-3 Pa and the temperature being greater than 1550 DEG C to obtain the doped yttrium aluminum garnet ceramic; a yttrium aluminum garnet crystal and the doped yttrium aluminum garnet ceramic are in a light glue combination to form a complex, and an argon treatment is carried out for 20 hours at the temperature higher than 1600 DEG C and the high pressure of 0 to 300 MPa; the heat preservation is carried out on a yttrium aluminum garnet doped single crystal for 100 hours under hydrogen, oxygen or air atmosphere at a temperature higher than 1200 DEG C.

A growth process of cerium dosed Y-Al garnet crystal is carried out by dosing Sc2O3 or Lu2O3 at mol. ratio of Al2O3 : Y2O3 : CeO2+A2O3 = 5:3 (1-x-y) :6x:3y, wherein, 0.1% <= x <= 10%, 0.1x <= y<=x, A2O3 = Sc2O3 or Lu2O3. The process can reduce poor placement in crystal and increase flash of crystal by improvement of radial match between Ce and Y ions.

The invention discloses a gadolinium yttrium scandium gallium garnet crystal (GYSGG) and a crystal growth method by a melt method thereof. The molecular formula of the crystal can be expressed as Gd3xY3(1-x)Sc2Ga3(1+delta)O12 (the x is equal to between 0 and 1 or between -0.2 and 0.2); Gd2O3, Y2O3, Sc2O3 and Ga2O3, or corresponding other compounds of gadolinium, yttrium, scandium, and gallium canbe used to perform the material mixing, and the premise is that the Gd3xY3(1-x)Sc2Ga3(1+delta)O12 is produced; prepared raw materials are subject to the perfect mixing, press forming and high temperature sintering, and then become an initial raw material of crystal growth; the initial raw material of the growth is placed into a crucible, is heated to fully melt down, and then becomes an initial melt of the growth by the melt method, and then melt methods such as a pulling method, a crucible descending method or a temperature gradient method as well as other melt methods can be used for the growth; for the melt method which needs seed crystals to directionally grow, the seed crystals are GYSGG monocrystals or yttrium scandium gallium garnet (YSGG) monocrystals or gadolinium scandium gallium garnet (GSGG) monocrystals. The GYSGG monocrystals can be used as a substrate material of a Bi3+-doped yttrium iron garnet epitaxial film.

The invention relates to a method for growing a terbium-aluminum garnet crystal by using a guide die pulling method, comprising the following steps of: placing a guide die internally provided with a longitudinal gap into a crucible; adding a polycrystal raw material into the crucible; heating the crucible to melt the polycrystal raw material; immersing a molten mass of the polycrystal raw material into a gap at the lower part of the guide die so as to raise the molten mass of the polycrystal raw material to an upper surface of the guide die under the action of capillary effect along the longitudinal gap of the guide die; and then pulling a lower seed crystal into a single crystal consistent with the shape of the guide die. By the invention, a large-size terbium-aluminum garnet single crystal can be prepared, post processing procedures can be simultaneously simplified and the cost for preparing the crystal can be reduced; in addition, the growth speed of the crystal is high, the optical homogeneity of the prepared crystal is favorable and the problem that a large-size body single crystal is not difficult to prepare by adopting a pulling method can be solved.

The invention discloses an Yb-Ca-Li-Nb garnet crystal in the laser crystal and instrument domain, which possesses Yb: Ca3LixNb15+xGa3.5-2xO12 as general formula with Yb: CLNGG in short, wherein the X is 0-0.75; the Yb doping density is less than 30at.%; the Yb: CLNGG can be continuous and pulse laser instrument to prepare end surface pump, which forms laser instrument with acoustic-optic modulation Q, electrooptical modulation Q, negative modulation Q and lock mould.

The invention discloses a doping gadolinium yttrium scandium gallium garnet, a gadolinium yttrium scandium gallium aluminium garnet and a method of the fused mass normal crystal for preparing the gadolinium yttrium scandium gallium garnet and the gadolinium yttrium scandium gallium aluminium garnet crystal or other corresponding compound for preparing; mixing the prepared raw material fully and pressing forming, and becoming initial raw material for crystal growth after high temperature calcination or non high temperature calcination; adding the growth initial raw material into a pot for heating fully to melt and becoming an initial melt of crystal growth with melt method, the obtained crystal can be used as a solid laser working substance.

A Faraday rotator in which the isolation function based on a temperature rise is not deteriorated even when the Faraday rotator is used for a high output laser of not smaller than 1W output at a wavelength of not larger than 1.1 μm includes sapphire crystals or rutile crystals bonded as radiation substrates to the incident side and outgoing side of a bismuth substituted type rare earth metal iron garnet crystal (RIG) film, the thickness of the RIG film being not smaller than 130 μm and not larger than 200 μm.

The invention discloses an yttrium aluminum garnet crystal doped growth device, a crystal growth furnace and a preparation method thereof, and belongs to the field of laser crystal preparation. The growth device includes a crucible, a thermal insulation cylinder arranged outside the crucible, a copper crucible induction arranged outside the thermal insulation cylinder and a seed crystal rod passing though the thermal insulation cylinder and extending into the crucible. The bottom of the thermal insulation cylinder is provided with a through hole for introducing nitrogen to the bottom of the crucible; the crucible is tungsten crucible or molybdenum crucible; and the thermal insulation cylinder is made of carbon doped boron nitride ceramics. Through the use of tungsten or molybdenum crucible, production cost is lowered; the carbon doped boron nitride ceramic thermal insulation cylinder carries out heat preservation on the crucible to prevent oxidation of tungsten or molybdenum at high temperature, so as to further reduce the production cost; and the through hole arranged at the bottom of the crucible and the thermal insulation cylinder is used to introduce flowing cooling high pure nitrogen into the bottom of the crucible in the cooling process, and air cooling is used to form an undercooling area at the bottom of the crucible, so as to improve the service life of the crucible and reduce the growth cycle.

The invention provides silicate fluorescent ceramic with a full-spectrum emission effect. The chemical formula of the silicate fluorescent ceramic is shown as following: Ca3-x-y-z-mCexPryMnzNamSc2Si3O12 (I), wherein x is greater than or equal to 0.001 and less than or equal to 0.2, y is greater than or equal to 0 and less than or equal to 0.1, z is greater than or equal to 0.03 and less than or equal to 0.4, and m is greater than or equal to 0 and less than or equal to 0.3. The silicate fluorescent ceramic adopts a garnet crystal structure, belongs to a cubic crystal system, and has a space group of Ia3d. The silicate fluorescent ceramic provided by the invention is stable in physicochemical property; under the effective excitation of blue light, the emission wavelength scope of the silicate fluorescent ceramic is broad; blue-green light, yellow light, red light and deep-red light are covered in the spectrum; a low-color-temperature high-color-rendering white-light LED can be manufactured by using such single fluorescent ceramic, namely the silicate fluorescent ceramic; the problem about reabsorption caused by the mixing of multi-color fluorescent powder can be solved; the silicate fluorescent ceramic can be applied to high-power blue-light LEDs or LD pumping white-light LEDs; and the high-end display and illumination requirements can be met.

The invention discloses an ytterbium and erbium-doped yttrium scandium gallium garnet crystal. The crystal has the chemical composition of YbaErbY3-a-bSc2Ga3O12, wherein a is greater than 0 and is less than or equal to 2; and b is equal to 0.9. The invention also discloses a preparation method of the ytterbium and erbium-doped yttrium scandium gallium garnet crystal. Through the ytterbium and erbium-doped yttrium scandium gallium garnet crystal obtained by the invention, high-efficiency dioxide pumping laser output can be realized.

The invention relates to a raw material synthesizing method for growing terbium gallium garnet crystal by a pulling method, which comprises the following steps: a. dissolving Ga2O3 into nitric acid solution to obtain gallium nitrate solution; b. dissolving Tb4O7 into the nitric acid solution to obtain terbium nitrate solution; c. fully mixing the two solutions according to the molar ratio of Ga:Tb=3:5 to obtain a mixing solution A; d. preparing ammonia solution with certain concentration of 2.5 mol / L; e. adding the mixing solution A and the ammonia solution dropwise into a bigger container, and keeping the pH value of the solution between 9 and 11 till the solution is completely deposited; d. keeping the sediments static for a certain period of time and then sequentially washing, filtering and depositing; e. drying and pressing the deposited terbium gallium garnet precursor; and f. sintering the pressed terbium gallium garnet at high temperature for a proper period of time. A terbium gallium garnet raw material can be used for growing a single crystal by a pulling method, the obtained crystal has high quality and no obvious cracking, scattering, stripes and black spots, and the processing finished product rate of the terbium gallium garnet crystal is high.

The invention discloses a preparation method of yttrium aluminum garnet crystal film doped with metal ions. The preparation method comprises the following steps: pressing raw material powders of yttrium aluminum garnets doped with metal ions into a green body used for a deposition coating film according to proportion, adopting electron beam evaporation-deposition process, focusing and injecting electron beams generated by an electron gun into the green body, controlling the electron beams to automatically scan and uniformly heat the pre-melted green body, primarily sintering the green body for crystallizing so as to obtain porcelain, then increasing the power of the electron gun so as to further heat the green body, thus melting, evaporating and depositing the green body on a lining substrate so as to form a film, then annealing the film under vacuum or protection atmosphere, and finally obtaining the yttrium aluminum garnet crystal film doped with metal ions, which is crystallized effectively. The method can realize the high-quality, low-cost and large-area batch production of the yttrium aluminum garnet crystal film doped with metal ions, the prepared yttrium aluminum garnet crystal film doped with metal ions can be used as novel light wave guide materials, laser work medium and functional film materials.

The invention relates to alkali metal doped garnet type lithium lanthanum zirconium oxide powder and a preparation method thereof. The chemical formula of the powder is Li<7+2a>La<3-a>MZr2O12, a islarger than 0 and smaller than or equal to 0.2, the crystal structure is a cubic phase, and the alkali metal M is one of potassium, rubidium and cesium. The alkali metal doped garnet type lithium lanthanum zirconium oxide powder provided by the invention is high in purity, small in grain size, narrow in grain size distribution and good in dispersity, and can be better applied to composite solid electrolyte. Besides, the preparation method provided by the invention is simple in process, good in repeatability, low in sintering temperature (the solid-phase sintering temperature of a standard cubic-phase garnet crystal is generally 1100-1300 DEG C), more energy-saving and environment-friendly, and easy for industrial production.

In conventional optical isolators, an optical signal is dispersed by polarization or the characteristics are varied by heat generation in a garnet crystal. According to the invention, the crystal optical axis (3c) of rutile crystal (3) is oriented so that the separation directions of the ordinary ray (O) and the extraordinary ray (E) are perpendicular to the plane including the optical axes of optical fibers (10, 11). Furthermore, the focusing central optical axis (6c) of a focusing rod lens (6) is arranged parallel with optical axes of the optical fibers (10, 11) and at a substantially equal distance from the four rays, i.e. the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (10) and the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (11). An air gap (7) of about 200 [μm] is provided, as a heat insulating means, between the focusing rod lens (6) and a magnetized garnet crystal (8).

The invention provides a luminescent material. The luminescent material has a garnet crystal structure and a chemical composition molecular formula is (Ybx,Rey,Az,Gd3-x-y-z)(Gaw,Al5-w)O12, wherein Re comprises an Er element and A is one or a combination of two or more of elements Y, Lu, B, Tb and Sc; x, y, z and w are mol content of the corresponding elements; the x is more than 0.01 and less than 1.2, the y is more than 0.01 and less than 1.2, the z is more than 0 and less than 1.5 and the w is more than 2 and less than 3. The luminescent material provided by the invention can be used for converting an infrared spectrum with the wavelength of being close to 980nm into visible light for emitting, so that a light spectrum modification material is applied to silicon-based solar cells and the light spectrum responding matching property between a light spectrum and the silicon-based solar cells is better, and furthermore, the energy conversion efficiency of the silicon-based solar cells is improved.

The invention provides a solar-pumped composite crystal with high absorption efficiency and radiating performance and preparation thereof; the composite crystal includes a neodymiumx yttrium aluminum garnet doped crystal layer and a neodymiumx yttrium aluminum garnet crystal layer; the neodymiumx yttrium aluminum garnet crystal layer is located at the outside of the neodymiumx yttrium aluminum garnet doped crystal layer. The preparation method is to bond the neodymiumx yttrium aluminum garnet crystal layer with the neodymiumx yttrium aluminum garnet doped crystal layer. By using the high heat conductivity of non-doped YAG crystal, the radiating performance of a laser crystal is promoted; the radiating area of the laser working crystal is enlarged by a composite structure; the surface radiating balance degree of the Nd: YAG crystal is improved by bonding the solid material; meanwhile, the utilization efficiency of the pumped light is effectively improved. The composite crystal can be applied to the solar pump, in particular to the laser system design of the solar pump; the radiating ability of the solar pump system and the pump light utilization efficiency are improved; the temperature balance function can further improve the light beam quality of the output laser, and expand the using scale of the light pump laser.

The invention relates to an annealing method for improving luminous efficiency of a cerium-doped yttrium aluminum garnet crystal, which is characterized by performing low temperature oxygen annealing or high temperature hydrogen annealing on the cerium-doped yttrium aluminum garnet (Ce:YAG) crystal grown by a graphite heater method. The method comprises the following steps: cleaning the crystal with acetone or alcohol first; placing the Ce:YAG crystal on a white stone or a pure YAG crystal substrate in a hearth; raising the temperature; annealing at a constant temperature; reducing the temperature to room temperature; and taking the Ce:YAG crystal out of the hearth. The annealing method can effectively eliminate the carbon-related defect in the crystal and improve the permeability of the crystal; and Ce<2+> ions formed in the growth process in the crystal are oxidized, thus the concentration of Ce<3+> ions needs to be increased and Ce<4+> ions are inhibited as much as possible at the same time to avoid quenching effect caused by the Ce<4+> ions so that the luminous intensity of the Ce:YAG crystal is improved to the utmost extent.