Method for growing terbium-aluminum garnet crystal by using guide die pulling method

Abstract

The invention relates to a method for growing a terbium-aluminum garnet crystal by using a guide die pulling method, comprising the following steps of: placing a guide die internally provided with a longitudinal gap into a crucible; adding a polycrystal raw material into the crucible; heating the crucible to melt the polycrystal raw material; immersing a molten mass of the polycrystal raw material into a gap at the lower part of the guide die so as to raise the molten mass of the polycrystal raw material to an upper surface of the guide die under the action of capillary effect along the longitudinal gap of the guide die; and then pulling a lower seed crystal into a single crystal consistent with the shape of the guide die. By the invention, a large-size terbium-aluminum garnet single crystal can be prepared, post processing procedures can be simultaneously simplified and the cost for preparing the crystal can be reduced; in addition, the growth speed of the crystal is high, the optical homogeneity of the prepared crystal is favorable and the problem that a large-size body single crystal is not difficult to prepare by adopting a pulling method can be solved.

Description

technical field [0001] The invention relates to a method for growing crystals, in particular to a method for growing terbium aluminum garnet crystals by a guided mode pulling method. Background technique [0002] Terbium aluminum garnet (Tb 3 Al 5 o 12 , TAG) crystal is a transparent paramagnetic magneto-optical material, which has a large Verdet constant in the visible and near-infrared bands, and absorbs less in this band. It is a Faraday isolator and laser magneto-optical device in fiber lasers. ideal material. However, terbium aluminum garnet crystals are non-isotropic molten compounds, and it is difficult to grow large-size bulk single crystals by the Czochralski method, while bulk single crystals can theoretically be obtained by the high-temperature solution method, but the crystal growth rate is slow and the period Long and costly. At present, it is reported that Japanese scholars use the laser floating zone (FZ) method to grow terbium aluminum garnet single crys...

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Problems solved by technology

[0003] The object of the present invention is to provide a method for growing terbium aluminum garnet crystals by the edge-defined film-fed growth method, to solve the problems of slow crystal growth rate and large-size bulk single crystals of terbium aluminum garnet prepared by the high-temperature solution method. The problem of long cycle and high cost

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