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Synthesizing method for growing terbium gallium garnet crystal by pulling method

A technology of terbium gallium garnet and synthesis method, which is applied in the field of synthesis of terbium gallium garnet crystals grown by pulling method, and can solve the problems of blackened crystals, easy cracking and streaks of TGG crystals, etc.

Inactive Publication Date: 2010-02-17
UNIONLIGHT TECH
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  • Abstract
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Problems solved by technology

[0008] The purpose of the present invention is to solve the problems of easy cracking, streaks, and blackening of the TGG crystal grown by the pulling method, and to provide a raw material synthesis method suitable for growing TGG by the pulling method and rare earth ion-doped TGG crystal

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  • Synthesizing method for growing terbium gallium garnet crystal by pulling method

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Embodiment 1

[0035] Embodiment 1 (Tb 3 Ga 5 o 12 liquid phase synthesis):

[0036] Ga with a purity of 99.99% 2 o 3 Completely dissolved in concentrated nitric acid solution to obtain Ga(NO 3 ) 3 solution. Will Tb 4 o 7 Completely dissolved in concentrated nitric acid solution to obtain Tb(NO 3 ) 4 solution. Prepare a certain amount of 2.5mol / L ammonia solution B. Ga(NO 3 ) 3 solution and Tb(NO 3 ) 4The solutions were fully mixed according to the molar ratio of 3:5 to obtain the mixed solution A. Prepare a certain amount of 2.5mol / L ammonia solution B. The above-mentioned mixed solution A and ammonia solution B, according to the synthesis route method of the accompanying drawings, flow the A and B solutions into a large container at the same flow rate, and stir for a long time so that the pH value is controlled at about 10. At this time The resulting white precipitate is the terbium gallium garnet precursor. The above-mentioned reactant was aged for 12-24 hours, and the ...

Embodiment 2

[0037] Embodiment 2 (liquid phase synthesis of Ce-doped TGG):

[0038] Ga with a purity of 99.99% 2 o 3 and CeO 2 (the molar percentage of Ce is 1%) completely dissolved in concentrated nitric acid solution to obtain Ga(NO 3 ) 3 solution. Will Tb 4 o 7 Completely dissolved in concentrated nitric acid solution to obtain Tb(NO 3 ) 4 solution. Prepare a certain amount of 2.5mol / L ammonia solution B. Ga(NO 3 ) 3 solution and Tb(NO 3 ) 4 The solutions were fully mixed according to the molar ratio of 3:5 to obtain the mixed solution A. Prepare a certain amount of 2.5mol / L ammonia solution B. The above-mentioned mixed solution A and ammonia solution B, according to the synthesis route method of the accompanying drawings, flow the A and B solutions into a large container at the same flow rate, and stir for a long time so that the pH value is controlled at about 10. At this time The resulting white precipitate is the precursor of cerium-doped terbium gallium garnet (Ce:...

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Abstract

The invention relates to a raw material synthesizing method for growing terbium gallium garnet crystal by a pulling method, which comprises the following steps: a. dissolving Ga2O3 into nitric acid solution to obtain gallium nitrate solution; b. dissolving Tb4O7 into the nitric acid solution to obtain terbium nitrate solution; c. fully mixing the two solutions according to the molar ratio of Ga:Tb=3:5 to obtain a mixing solution A; d. preparing ammonia solution with certain concentration of 2.5 mol / L; e. adding the mixing solution A and the ammonia solution dropwise into a bigger container, and keeping the pH value of the solution between 9 and 11 till the solution is completely deposited; d. keeping the sediments static for a certain period of time and then sequentially washing, filtering and depositing; e. drying and pressing the deposited terbium gallium garnet precursor; and f. sintering the pressed terbium gallium garnet at high temperature for a proper period of time. A terbium gallium garnet raw material can be used for growing a single crystal by a pulling method, the obtained crystal has high quality and no obvious cracking, scattering, stripes and black spots, and the processing finished product rate of the terbium gallium garnet crystal is high.

Description

technical field [0001] The invention relates to a raw material synthesis method for growing terbium gallium garnet and rare earth ion-doped terbium gallium garnet crystal by pulling method. Background technique [0002] From a macro point of view, optical fiber communication mainly includes three parts: optical fiber, optoelectronic devices and optical communication system equipment. Optoelectronic devices include active devices and passive devices. Active devices include light sources (light-emitting diodes, lasers), photodetectors (photodiodes, avalanche photodiodes) and optical amplifiers (fiber amplifiers, semiconductor laser amplifiers, fiber Raman amplifiers) and various modules composed of these devices, etc. . Passive components include connectors, optical couplers, optical attenuators, optical isolators, optical switches, and wavelength division multiplexers. At the same time, there are optoelectronic integrated OEIC and photonic integrated PIC devices. The perf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28
Inventor 柳祝平裴广庆黄小卫王有明
Owner UNIONLIGHT TECH
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