39 results about "Bond rupture" patented technology

The invention discloses a domestic refuse suspension-type combustion carbonization pyrolysis system and a treatment technique thereof. The system is sequentially composed of a refuse conveying platform, a suspension-type pyrolysis combustion integrated furnace, a soda lye washer, a honeycomb plasma flue gas treatment device, a power pulse electrochemical photoelectric ion waste gas treatment device, a peculiar smell advanced treatment device containing high-energy oxygen nano water, a deduster and an induced fan. The treatment technique comprises the following steps: carrying out pyrolysis on domestic refuse, combusting, disacidifying by soda lye washing, carrying out plasma ionization to remove dust and tar, carrying out high-power narrow-pulse electron bombardment to promote bond rupture and recombination of stubborn harmful substances, removing flue gas and peculiar smell by using high-energy oxygen water, filtering through the deduster to remove dust, and discharging through the induced fan. The domestic refuse treatment technique disclosed by the invention has the advantages of high decrement degree and higher exhaust emission quality than national standard. The system using the technique has the advantages of low investment, simple operation, high safety and environment friendliness, low carbon and energy saving, and can comprehensively and basically solve the problem in domestic refuse.

The invention provides a formation method of a semiconductor structure. The formation method of a semiconductor structure comprises the steps: providing a semiconductor substrate, wherein a plurality of grooves are formed in the semiconductor substrate; forming a first oxygen ambient silica layer on the surface of the side wall and the bottom of the grooves and on the surface of the semiconductor structure, wherein part of silicon atoms on the surface of the first oxygen ambient silica layer are connected with ethoxy; performing an inertia plasma processing technology to realize bond rupture between the ethyl and oxygen atoms in the ethoxy on the surface of the first oxygen ambient silica layer to form a silicon oxygen dangling bond; performing a water vapour processing technology to realize combination of the oxygen and the hydrogen in the silicon oxygen dangling bond on the surface of the first oxygen ambient silica layer to form a silicon oxygen hydrogen bond; performing an ultraviolet processing technology to remove the protium in the silicon oxygen hydrogen bond on the surface of the first oxygen ambient silica layer to form a silicon oxygen silicon bond; performing a second high aspect ratio deposition technology to form a second oxygen ambient silica layer on the surface of the first oxygen ambient silica layer; and removing the first oxygen ambient silica layer and the second oxygen ambient silica layer on the semiconductor substrate, and forming a shallow groove isolation structure in the grooves. The formation method of a semiconductor structure can increase the compactness of the shallow groove isolation structure.