92results about How to "Simplify the solution steps" patented technology

A method for manufacturing a resonator of the present invention includes the steps of (a) forming a resonator film including a piezoelectric film made of piezoelectric material and (b) preparing a resonator substrate for supporting the resonator film. The method further comprises the step of (c) bonding the resonator film formed in the step (a) and the resonator substrate prepared in the step (b).

A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.

The invention relates to a revocable key external package decryption method based on content attributes. For a trusted authority, 1, initialization is carried out, and system parameters are output; 2, a random number generation algorithm operates; 3, a collision-resistant Hash function is selected, and the Hash value is calculated; 4, a public key and a main key are calculated; 5, the random number is selected, and exponentiation calculation and multiplication are carried out; 6, the collision-resistant Hash function operates, the exponentiation operation is carried out, and a decryption key is obtained. For a data holder, 7, AES data encryption is carried out; 8, an access control matrix is generated; 9, a random number is selected, and an inner product is calculated; 10, multiplication, exponentiation and exclusive-or operation is operated, and ciphertexts are obtained. For a decryption operator, 11, a decryption request and a transformation key are sent. For a mobile storage serve provider, 12, CT2 is sent to an external package decryption agency. For the external package decryption agency, 13, the transformation key is utilized, and the transformation ciphertext is calculated. For the decryption operator, 14, a conversation key is obtained through calculation; 15, AES data decryption is carried out.

An optical waveguide isolator for use in an optical communication system is disclosed. The optical waveguide isolator comprises a semiconductive light amplifier structure including a semiconductor substrate of first conductivity type having a surface of a layer to be formed thereon, a first cladding layer of first conductivity type formed on the substrate, an active layer formed on the first cladding layer, a second cladding layer of the second conductivity type opposite to first conductivity type, formed on active layer, a first electrode formed on the surface of the semiconductor substrate opposite to the surface to be formed as a layer, and a second electrode formed on the second cladding layer; the first and the second cladding layers and the active layer form an optical waveguide in which the light wave propagates. The semiconductive light amplifier structure further comprises a light absorptive magnetic material layer having light absorption function for the light wave propagating through the optical waveguide. The magnetic material layer is magnetized so as to have the magnetic-field component in the direction which corresponds to the direction where a magnetic vector of the light wave vibrates, the waveguide structure body has a nonreciprocity optical characteristic that effective refractive index changes into the light wave to which the optical waveguide is propagated according to the magnet-optical effect of the light absorptive magnetic material layer according to the direction of propagation, by the effective refractive index change in the nonreciprocity, the attenuation of the first light wave that the optical waveguide is propagated in the first direction caused when the said waveguide is propagated, becomes small more than the attenuation of the second light wave propagated in the second direction opposite to the first direction caused when the said waveguide is propagated.

An improvement to the chloride process of making titanium dioxide. By recycling some of the cyclone dust, the yield in the chlorination of titanium-containing raw materials can be increased. In order to prevent silica accumulation in the fluidized bed, the cyclone dust is divided into two fractions. An economic solution is described of a single-stage separation of the cyclone dust in a hydrocyclone, the majority of the titanium dioxide occurring in the hydrocyclone underflow, although the separation is not sharp. By grinding and drying the solids from the hydrocyclone underflow, the titanium dioxide particles returned to the lower region of the fluidized-bed reactor are rapidly chlorinated, while the quartz and coke particles are rapidly discharged again from the fluid bed, so that no silica contamination occurs.

In a laminated ceramic electronic component including a ceramic element body including a plurality of effective sections, each of which constitutes a circuit element such as a laminated capacitor unit, bumps generated between the effective portions and a gap interposed between the effective portions can be made minimized. Specifically, the ceramic element body includes a first effective section including a first circuit element and a second effective section including a second circuit element. A gap is provided between the first and second effective section. Floating internal conductors are arranged in the gap at least in one of first and second external layer sections, the first external section being interposed between a first main surface and the first and second effective sections, and the second external layer section being interposed between a second main surface and the first and second effective sections.

The present invention provides an electromagnetic wave shielding material including a three dimensionally knitted base material and a conductive metal layer formed on the three dimensionally knitted base material, which shielding material is characterized in that it comprises: a heat-fusing thread used at at least a portion of the three dimensionally knitted base material; and a portion in which connection thread is not present, wherein the amount of cutting debris generated at the time of cutting is decreased. According to the present invention, an electromagnetic wave shielding material, which is used for an electromagnetic wave shielding gasket for shielding electromagnetic wave, exhibits good workability if the thickness of the product is relatively thin, suppresses the metal separation and reduces the amount of cutting debris generated at the time of cutting, is obtained.

The present invention provides a cosmetic exhibiting superior feeling to the touch and a superior uniformity using a novel organopolysiloxane. The cosmetic contains a liquid organopolysiloxane having fluidity at 25° C. and having a crosslinked three-dimensional network structure. The aforementioned liquid organopolysiloxane has a loss factor, tan δ, at a shear frequency of 10 Hz, which is 1 or more.

Miniaturized circuit housing to encapsulate and provide external contacts for at least one integrated circuit, in particular of the flip-chip or wafer-level-package type, with a housing floor, the lower surface of which bears housing contact elements for making external contact and the upper surface of which is electrically connected to circuit contact elements on the lower surface of the circuit, wherein a housing lid is provided, in particular opposite the housing floor, which presses the circuit with the circuit contact element resiliently against the upper surface of the housing floor, and between the circuit contact elements and the housing floor there is no connection that fixes their materials permanently together.

An integrated circuit mounting a DRAM which can realize high integration without complicated manufacturing steps. The integrated circuit according to the invention comprises a DRAM in which a plurality of memory cells each having a thin film transistor are disposed. The thin film transistor comprises an active layer including a channel forming region, and first and second electrodes overlapping with each other with the channel forming region interposed therebetween. By controlling a drain voltage of the thin film transistor according to data, it is determined whether to accumulate holes in the channel forming region or not, and data is read out by confirming whether or not holes are accumulated.

The invention discloses a migration sparse coding image classification method based on dictionary domain adaptation, belonging to the machine learning field. This method introduces dictionary alignment mechanism based on traditional sparse coding model and constructs feature transfer classification model to solve the problem of image cross-domain classification. When the samples in source domain and target domain obey different distributions, the traditional sparse-coded image classification algorithm can not learn from the samples in source domain to obtain the dictionary which can encode thesamples in target domain effectively, so the classification performance is degraded. At first, that dictionary alignment mechanism is introduce into a sparse coding model, then the constraint term ofthe dictionary are converted into an unconstrained optimization problem by L2 regularization, and the knowledge transfer performance of the model is improved by adopting an inter-domain dictionary approximation as a regularization term. The invention can effectively extract cross-domain image sparse feature representation and obtain higher classification accuracy.

A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.

The invention relates to a wind power installed capacity technology, in particular to a wind power proportion limit value analytical calculation method considering frequency constraints, which comprises the following steps of: modeling a conventional unit of a system to obtain a detailed frequency response model reflecting each physical process; performing equivalent processing on the system to obtain a power system frequency response SFR single-machine equivalent reduced-order model; calculating a wind power ratio according to the fan access capacity and the original capacity of the system, and further calculating system parameters after fan grid connection; substituting into the original single-machine equivalent reduced-order model to obtain a power system frequency response model afterfan grid connection, obtaining a frequency domain expression after system frequency deviation per unit, and calculating an expression of system frequency steady-state deviation; respectively considering the steady-state frequency deviation constraint boundary and the angular frequency change rate constraint boundary of the system to solve a wind power ratio limit value, and taking the smaller value of the two boundaries to obtain an actual wind power ratio limit value. The method is simple in solving step, reduces the calculation complexity, and has certain calculation universality.

In the present invention, a gas flow restraining ring facing corner portions of the front face of a substrate horizontally held on a substrate holding unit and movable up and down, is set to a predetermined height in accordance with a coating treatment. Then, a coating solution containing a coating film forming component and a solvent is applied to the front face of the substrate and spread into a thin film state by a so-called spin coating method, and thereafter the substrate is rotated at a high speed so that the coating solution is dried. In this case, it is possible to control fresh gas flow from above the substrate to decrease the difference in evaporation rate of the solvent between the coating solution on the corner portions of the substrate and the coating solution inside them, thus enabling the coating treatment uniform within a plane on the substrate.

The present specification discloses a membrane reactor comprising a reaction region; a permeate region; and a composite membrane disposed at a boundary of the reaction region and the permeate region, wherein the reaction region comprises a bed filled with a catalyst for dehydrogenation reaction, wherein the composite membrane comprises a support layer including a metal with a body-centered-cubic (BCC) crystal structure, and a catalyst layer including a palladium (Pd) or a palladium alloy formed onto the support layer, wherein ammonia (NH3) is supplied to the reaction region, the ammonia is converted into hydrogen (H2) by the dehydrogenation reaction in the presence of the catalyst for dehydrogenation reaction, and the hydrogen permeates the composite membrane and is emitted from the membrane reactor through the permeate region.

A rotary machine comprising a stator 2 composed of a stator iron core 3 having a plurality of slots formed in the direction of the rotation axis and stator windings inserted into the plurality of slots, wherein the stator windings are composed of a plurality of conductors 4 respectively inserted into the plurality of slots in the direction of the rotation axis and the stator 2 has a connection ring 1 having slots 13 into which the plurality of conductors 4 are inserted in the direction of the rotation axis.

Provided is a print system for generating print data and print job data such that they may be restored from a printed matter. PDL-converted layout data that can be obtained by performing PDL conversion of predetermined layout data is symbolized in a predetermined encoding technique, and image data of the obtained symbol is PDL-converted. The resulting data is combined with the PDL-converted layout data and then supplied to a printer as print data. Printing of this print data results in a printed matter PM, in which a symbol SB is added to a substantive image, i.e., the image of contents desired to represent at the time of layout. By a predetermined restore processor with decode means corresponding to the encoding technique, the symbol SB is read and decoded, thereby faithfully restoring the PDL-converted layout data. Once a document is kept as a printed matter, the reuse of layout data is easy to carry out, without retaining electronic data. Alternatively, print job data composed of layout data having a PDL format and print processing conditions necessary for printing are symbolized in a predetermined encoding technique. Image data of the obtained symbol is PDL-converted and combined with the layout data, thereby obtaining print job data. The execution of print processing of the print job data results in a printed matter, in which a symbol is added to a substantive image, i.e., the image of contents desired to represent at the time of layout. By a predetermined restore processor with a decoding technique corresponding to the encoding technique, the symbol SB is read and decoded, thereby faithfully restoring first print job data. Once a document is kept as a printed matter, reprinting based on print job data can be executed easily and reliably, without retaining electronic data.

Two on-chip capacitors including one HV capacitor VPPcap and one LV VCC capacitor VCCcap are built over a NVSRAM memory chip as a back-up second power supplies for each NVSRAM cell, regardless of 1-poly, 2-poly, PMOS or NMOS flash cell structures therein. The on-chip HV and LV capacitors are preferably made from one or more MIM or MIP layers for achieving required capacitance. A simplified VCC power system circuit without a need of a State machine designed for performing only one NVSRAM Program operation without Erase operations is proposed for initiating NVSRAM's Auto-Store operation without using any off-chip Vbat and Vcap. During the Auto-Store operation, all HV pumps and oscillators associated with the two on-chip capacitors are shut off once VCC voltage drop is detected by a VCC detector to be below 80% of regular VDD level.

A quick release device for faucets mainly includes a valve and a quick release unit. The valve is connected to at least two passages through which water flows, at least one passage is formed with a concave joint slot the inner circumference of which is formed with a shift limit slot. The quick release joint unit is oppositely arranged in the joint slot, and a shift limit unit is provided in the quick release joint and may be thereby fixed in the shift limit slot. A pipeline is provided that may be quickly installed on and removed from the quick release joint group. Thus, the installation time may be saved, the complicated installation steps may be reduced, and the area where flowing water contacts the metal may be decreased.

A hub arrangement for a hydrodynamic torque converter includes a first hub component forming a first hub area with a first connection area connectable with a converter housing of the torque converter, a second hub component forming a second hub area with a second connection area connectable with a lockup clutch of the torque converter, and a fluid channel arrangement having at least one fluid channel connecting a radial inner area of the hub arrangement with a radial outer area. The first hub component and the second hub component contact one another at least in some areas in surface regions thereof which are located opposite one another. A recess arrangement is arranged in at least one of the oppositely located surface regions of the first and second hub components for forming the fluid channel arrangement.

A nano-imprinting process is described, comprising: providing a substrate including an imprinting material layer covering a surface of the substrate; providing a mold including protruding features set on a surface of the mold covered with an anti-adhesion layer; forming a transferring material layer on a top surface of each protruding feature; embedding the transferring material layer into a first portion of the imprinting material layer; removing the mold and separating the mold and the transferring material layer simultaneously to transfer the transferring material layer into the first portion of the imprinting material layer and to expose a second portion of the imprinting material layer; using the transferring material layer as a mask to remove the second portion of the imprinting material layer and a portion of the substrate; and removing the first portion of the imprinting material layer and the transferring material layer.

A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n- junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.

In the present invention, a gas flow restraining ring facing corner portions of the front face of a substrate horizontally held on a substrate holding unit and movable up and down, is set to a predetermined height in accordance with a coating treatment. Then, a coating solution containing a coating film forming component and a solvent is applied to the front face of the substrate and spread into a thin film state by a so-called spin coating method, and thereafter the substrate is rotated at a high speed so that the coating solution is dried. In this case, it is possible to control fresh gas flow from above the substrate to decrease the difference in evaporation rate of the solvent between the coating solution on the corner portions of the substrate and the coating solution inside them, thus enabling the coating treatment uniform within a plane on the substrate.

The invention discloses a mine ventilation system building method based on DIMINE software. According to the method, a mine ventilation system three-dimensional model is built through the DIMINE software; the DIMINE file format of the built ventilation system three-dimensional model is converted into a file format compatible with 3DVent software; according to the ventilation network resolution technology requirements, the mine ventilation network resolution work is completed through combining the actual conditions of a mine; according to the ventilation network resolution result, the mine ventilation system design and modification scheme optimization work is completed; according to the ventilation network resolution result, the three-dimensional visualization and air flow animation simulation software realization technology study of the ventilation network resolution result is developed; and the real three-dimensional visualization and air flow animation simulation of the mine ventilation network resolution result is realized. The method has the advantages that the resolution step is simplified; the work efficiency and the accuracy are improved; the electric energy can be saved; the ventilation cost is reduced; the underground microclimate conditions are improved; and a good operation environment is created for underground workers.

A rotary machine having a stator composed of a stator iron core having a plurality of slots formed in the direction of the rotation axis and stator windings inserted into the plurality of slots, wherein the stator windings are composed of a plurality of conductors respectively inserted into the plurality of slots in the direction of the rotation axis and the stator has a connection ring having slots into which the plurality of conductors are inserted in the direction of the rotation axis.

An etchant for copper or copper alloy, which contains water as a main component and comprises (1) 1 to 20 mass % of iron (III) chloride and (2) 5 to 100 mass %, based on the iron chloride, of oxalic acid, and an etching method using the above etchant are provided, and the etching method includes pretreatment to be carried out with an aqueous solution containing at least one component selected from a component that dissolves copper or copper alloy and an acid, whereby well yields can be materialized.

The liquid jet head (1) includes: a piezoelectric substrate (4) including a plurality of grooves (5) which are formed therein from a front end (FE) to a rear end (RE) of a surface of the substrate and separated from one another by side walls (3), the piezoelectric substrate having lead-out electrodes (8) formed on top surfaces of the side walls (3); a cover plate (11) which includes a manifold (9) and is bonded to the surface of the piezoelectric substrate (4); and a sealing material (14) for blocking, of channels formed by the cover plate (11) and the grooves (5), openings of rear channels (10) formed on the rear end (RE) side with respect to the manifold (9).

A semiconductor device includes an n+ type silicon carbide substrate, and in the substrate an active region where primary current flows and an edge termination area surrounding the active region. The semiconductor device has a first p-type region and a second p-type region in the edge termination area, and the first p-type region includes therein a plurality of third p-type regions, and the second p-type region includes therein a plurality of fourth p-type regions. The widths between the respective plurality of third p-type regions and the widths between the respective plurality of fourth p-type regions become greater further away from the active region.