43results about How to "Reduced Diffusion Effects" patented technology

An optical element, includes: a diffractive functional layer which diffracts at least part of incident light; and a grid formed on a first surface of the diffractive functional layer, the grid including a plurality of fine wires and having a polarization separation function; wherein the optical element reflects a part of the incident light while transmitting another part of the incident light, the first surface of the diffractive functional layer including: a plurality of first regions; a plurality of second regions, a height thereof relative to a second surface of the diffractive functional layer being different from that of the first regions, the second surface being an opposite surface to the first surface; and a step provided at a border between the first regions and the second regions.

Provided are an immunochromatography kit that is highly sensitive and capable of multicoloration, and organic colored microparticles that are ideal as an element of the immunochromatography kit. Organic colored microparticles having an average grain size between 10 and 1,000 nm and a color intensity between 1.0 and 5.0 are prepared using cellulose as the starting material. When the organic colored microparticles are used as a label in an immunochromatography kit, the immunochromatography kit is of a high sensitivity than conventional technology. The immunochromatography kit is also capable of multicoloration and is useful for rapid diagnosis.

The invention discloses a gate structure of a separation gate power device. A silicon substrate is provided with a trench. The side walls and the bottom of the trench are each provided with an oxide layer in an attachment mode. The lower portion in the trench is provided with a separation gate. The upper portion of the separation gate is covered with a silicon oxide layer as well. The silicon oxide layer on the separation gate and the silicon oxide layers on the side walls and at the bottom of the trench encircle the separation gate. The upper portion of the trench is a gate. The surface of the silicon substrate is an insulating layer. A metal lead penetrates through a contact hole of the insulating layer and leads the gate out. The gate is a polycrystalline silicon thin gate of a U-shaped structure and filled with metal tungsten, and the contact hole is connected with the filled metal tungsten to lead the gate out. The invention further discloses a process method of the gate structure of the separation gate power device.

A side-gusset bag has front and back face panels each having two longitudinally extending side edges. Two folded side panels are each joined to the face panels at the side edges and each having a center longitudinally extending crease between the respective side edges. A handle assembly consists of a pair of substantially identical handle halves each formed by two longitudinally spaced ends fixed to one of the side folds to a respective side of the crease thereof and a middle section extending between the respective ends and formed unitarily therewith of plastic film. The middle sections are transversely spaced and form an open longitudinally extending gap at least 2 mm wide and aligned with the respective crease. The middle sections extend transversely over less than 80% of a transverse width of the one side fold and have outer edges space at least 5 mm from the respective side edges.

An agitation method for mixing a solution and a solvent to precipitate a solid substance from the solution. The method includes preparing an agitation mixer including an agitation vessel, an impeller rotated in the agitation vessel, and a feed pipe connected to the agitation vessel and having a multiple pipe structure including an outer pipe and an inner pipe arranged in the outer pipe. A shearing clearance is formed in the agitation vessel between the impeller and the feed pipe. The method further includes shearing the solution and the solvent by rotating the impeller to precipitate the solid substance while feeding the solution and the solvent into the shearing clearance from the outer pipe and the inner pipe.

The present invention discloses a preparation process of woven nano carbon fiber macro particle containing high activity nickel catalyst for industrial application. The preparation process includes the following steps: preparing nitrate solution with Ni, Cu and Al ions of 0.4-1 M concentration; heating the solution to 55-65 deg.c and dropping 1 M concentration Na2CO3 solution; filtering and washing the precipitate with deionized water in 55-65 deg.c for 2-8 times; drying the precipitate at 120 deg.c for 5 hr; crushing the precipitate, incinerating at 350-550 deg.c and reduction in reactor; introducing methane for reaction at 450-750 deg.c. The particle thus obtained has high mechanical strength, high conducting capacity and excellent antioxidant ability.

Provided are an immunochromatography kit that is highly sensitive and capable of multicoloration, and organic colored microparticles that are ideal as an element of the immunochromatography kit. Organic colored microparticles having an average grain size between 10 and 1,000 nm and a color intensity between 1.0 and 5.0 are prepared using cellulose as the starting material. When the organic colored microparticles are used as a label in an immunochromatography kit, the immunochromatography kit is of a high sensitivity than conventional technology. The immunochromatography kit is also capable of multicoloration and is useful for rapid diagnosis.

The invention relates to an NiO / proton electrolyte combined film electrode structure and a preparation method thereof. A porous material serves as a substrate, and is covered with an oxide ceramic isolation layer and a combined electrode layer successively to make a combined electrode in the form of a film. The isolation layer is additionally arranged to reduce or block element diffusion between the porous substrate and the combined film electrode layer effectively, and the completeness of the electrode layer is ensured. The combined electrode uses powder in the same system with an electrolytelayer, and can be consistent with the subsequent electrode layer, and an interface effect between film layers is reduced. A thinner combined electrode layer can be obtained via a slurry coating method, the diffusion resistance can be reduced, and the working efficiency is improved.

The invention relates to an air hydrostatic bearing of a machine making free piston type reciprocating motion. The air hydrostatic bearing comprises a piston, a cylinder, a discharger, a compressing cavity and an air storage groove, wherein a first orifice, a first annular shallow groove and a first pressure equalizing shallow groove are formed in the outer side of the outer circumference of the outer sleeve of the piston along the circumferential direction; the first pressure equalizing shallow groove is communicated with the first annular shallow groove at two sides of the first orifice; the first orifice is communicated with the first annular shallow groove through the first pressure equalizing shallow groove; double-row second orifices are formed in the outer side of the outer circumference of the inner sleeve of the piston along the circumferential direction; a second annular shallow groove and a second pressure equalizing shallow groove are formed in the inner side of the inner circumference; the second pressure equalizing shallow groove is communicated with the second annular shallow groove at two sides of the second orifices; and the second orifices are communicated with the second annular shallow groove through the second pressure equalizing shallow groove. The bearing capacity and air film rigidity of the air hydrostatic bearing are improved, the service life of the piston is prolonged, the air consumption is lowered and the efficiency of the machine making free piston type reciprocating motion is increased.

A display device includes a display panel, at least one light source, a diffusion plate, an optical member, and a plurality of adhesive layers. The diffusion plate diffuses light from the at least one light source. The optical member is disposed between the diffusion plate and the at least one light source and has at least one transmitting portion that transmits the light from the at least one light source and a reflective portion that reflects the light from the at least one light source. The adhesive layers bond the optical member and the diffusion plate with an air layer therebetween. The adhesive layers are arranged spaced apart from each other in a direction in which the optical member extends. The air layer has the same thickness as the adhesive layers and is located between an adjacent pair of the adhesive layers.

The invention provides a method for preparing a plasma nitrided gate dielectric layer. The method is characterized in that the method includes the steps of providing a substrate, forming a silicon dioxide layer on the substrate and doping nitrogen into a silicon oxide layer under the temperature condition of minus 100 degrees to 0 degree. With the nitrogen doped under the low temperature of minus 100 degrees to 0 degree; diffusion effect of nitrogen ions is reduced; more nitrogen ions gather on the upper surface of the silicon dioxide layer; more bonding between Si-O bond and nitrogen ions is interrupted; nitrogen content on the upper surface of the plasma nitrided gate dielectric layer is increased. Thus, not only is leakage current density reduced but also a high gate capacitance is provided. Furthermore, reliability of the device is improved, and B+ is inhibited from diffusing from gate polysilicon to gate oxide.

A display device includes a display panel, at least one light source, a diffusion plate, an optical member, and a plurality of adhesive layers. The diffusion plate diffuses light from the at least one light source. The optical member is disposed between the diffusion plate and the at least one light source and has at least one transmitting portion that transmits the light from the at least one light source and a reflective portion that reflects the light from the at least one light source. The adhesive layers bond the optical member and the diffusion plate with an air layer therebetween. The adhesive layers are arranged spaced apart from each other in a direction in which the optical member extends. The air layer has the same thickness as the adhesive layers and is located between an adjacent pair of the adhesive layers.

The present invention provides a terahertz modulator based on a silicon-based microstructure on SOI and its preparation method and modulation system. The terahertz modulator includes from bottom to top: the underlying Al 2 o 3 Substrate, SiO 2 Isolation layer, silicon-based microstructure, Al 2 o 3 passivation layer, silicon-based microstructure in SiO 2 Periodically arranged on the isolation layer, each silicon-based microstructure includes two layers of square Si-based step structures, and the modulation system includes: a semiconductor laser, a laser modulator, a terahertz modulator, a terahertz radiation source, and a terahertz detector. The present invention For terahertz waves from 0.4THz to 0.85THz, the reflectivity is below 22%, reaching the lowest 18% at 0.82THz, which can significantly reduce the reflectivity of modulation devices to terahertz waves and improve the utilization of terahertz waves; in power Under the irradiation of 1200mw 808nm laser, the modulation depth reaches 64.5%. Compared with the traditional silicon-based terahertz modulator, the terahertz imaging diffusion area effectively improves the resolution in the imaging system to more than 21.9%.