43results about How to "Reduced Diffusion Effects" patented technology

An optical element, includes: a diffractive functional layer which diffracts at least part of incident light; and a grid formed on a first surface of the diffractive functional layer, the grid including a plurality of fine wires and having a polarization separation function; wherein the optical element reflects a part of the incident light while transmitting another part of the incident light, the first surface of the diffractive functional layer including: a plurality of first regions; a plurality of second regions, a height thereof relative to a second surface of the diffractive functional layer being different from that of the first regions, the second surface being an opposite surface to the first surface; and a step provided at a border between the first regions and the second regions.

An optical element, includes: a diffractive functional layer which diffracts at least part of incident light; and a grid formed on a first surface of the diffractive functional layer, the grid including a plurality of fine wires and having a polarization separation function; wherein the optical element reflects a part of the incident light while transmitting another part of the incident light, the first surface of the diffractive functional layer including a plurality of first regions; a plurality of second regions, a height thereof relative to a second surface of the diffractive functional layer being different from that of the first regions, the second surface being an opposite surface to the first surface; and a step provided at a border between the first regions and the second regions.

The invention relates to an air hydrostatic bearing of a machine making free piston type reciprocating motion. The air hydrostatic bearing comprises a piston, a cylinder, a discharger, a compressing cavity and an air storage groove, wherein a first orifice, a first annular shallow groove and a first pressure equalizing shallow groove are formed in the outer side of the outer circumference of the outer sleeve of the piston along the circumferential direction; the first pressure equalizing shallow groove is communicated with the first annular shallow groove at two sides of the first orifice; the first orifice is communicated with the first annular shallow groove through the first pressure equalizing shallow groove; double-row second orifices are formed in the outer side of the outer circumference of the inner sleeve of the piston along the circumferential direction; a second annular shallow groove and a second pressure equalizing shallow groove are formed in the inner side of the inner circumference; the second pressure equalizing shallow groove is communicated with the second annular shallow groove at two sides of the second orifices; and the second orifices are communicated with the second annular shallow groove through the second pressure equalizing shallow groove. The bearing capacity and air film rigidity of the air hydrostatic bearing are improved, the service life of the piston is prolonged, the air consumption is lowered and the efficiency of the machine making free piston type reciprocating motion is increased.

The invention provides a method for preparing a plasma nitrided gate dielectric layer. The method is characterized in that the method includes the steps of providing a substrate, forming a silicon dioxide layer on the substrate and doping nitrogen into a silicon oxide layer under the temperature condition of minus 100 degrees to 0 degree. With the nitrogen doped under the low temperature of minus 100 degrees to 0 degree; diffusion effect of nitrogen ions is reduced; more nitrogen ions gather on the upper surface of the silicon dioxide layer; more bonding between Si-O bond and nitrogen ions is interrupted; nitrogen content on the upper surface of the plasma nitrided gate dielectric layer is increased. Thus, not only is leakage current density reduced but also a high gate capacitance is provided. Furthermore, reliability of the device is improved, and B+ is inhibited from diffusing from gate polysilicon to gate oxide.