The invention discloses P-type high-concentration doped
silicon and a technology for preparing a P-channel MOS (
Metal Oxide Semiconductor)
pipe of a BCD (Bipolar, Complementary
Metal-
Oxide-
Semiconductor and Double-
Diffusion Metal-
Oxide-
Semiconductor ) products, aiming at solving the problem of
electricity leakage resulting from a lattice defect of the P-type high-concentration doped
silicon manufactured with the prior art. A realization method of the technology of the P-type high-concentration doped
silicon comprises the steps of conducting low-pressure deposition to form a
silicon oxide dielectric layer, photoetching a substrate, defining an injection area, injecting
boron ions in the defined injection area and conducting high-temperature annealing on the injected
boron ions. According to the embodiment of the invention, before the P-type high-concentration doped silicon is prepared, the
impact of the injection of the
boron ions onto the surface of the silicon can be relieved by the low pressure deposition of the
silicon oxide dielectric layer; the boron ions are injected when
iron injection is conducted; as the molecular weight of the boron ions is smaller, the injected energy is smaller and the
impact to the surface of the silicon is reduced; and in addition, as the injected impurities do not contain
fluorine atoms, the defect problems caused by the
fluorine atoms are avoided, and thus, the risk of generating the lattice defect is reduced and the probability of
electricity leakage is lowered.