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39results about How to "Reduce the possibility of electric leakage" patented technology

Grid drive circuit and array substrate and display panel thereof

The invention relates to a grid drive circuit and an array substrate and a display panel of the grid drive circuit. The grid drive circuit comprises multi-stage grid drive units, each stage of grid drive unit comprises a starting unit, an energy storage unit, a pulling-up unit, a first pulling-down unit and a second pulling-down unit, wherein the second pulling-down unit is coupled with the energy storage unit and a grid line and used for generating second control signals intermittently according to a driving voltage, a time pulse signal and a second reference voltage so that the driving voltage and a grid signal on the grid line can be pulled down to the second reference voltage. Besides, in order to prevent the problem because a leakage current exists between a first reference voltage and the second reference voltage, a chip responsible for providing the reference voltages is burnt, transistors which are located between the first reference voltage and the second reference voltage and the leakage current may flow through are further changed to a plurality of transistors in series connection so that the electric leakage probability is reduced. The grid drive circuit and the array substrate of the grid drive circuit are enhanced in reliability, the service life is long, and the grid drive circuit can be applied to various display panels.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD

Lens module group

The invention relates to a lens module group, which comprises a housing, a lens holder used for containing lenses and a driving part which are arranged in the housing; wherein the driving part comprises a magnet fixed either in the housing or in the lens holder and a coil fixed either in the housing or in the lens holder; the lens module group also comprises an eccentrically pressed leaf spring which comprises at least three separating parts; power is supplied to the coil by two separating parts; each separating part comprises an attaching part attached to the lens holder, a fixing part fixedto the housing and an elastic part connected between the attaching part and the fixing part. As only two parts of the eccentrically pressed leaf springs are electrified, the lens module group greatlyreduces the possibility of electric leakage.
Owner:JOHNSON ELECTRIC SHENZHEN

Geological temperature sensitive material capable of simulating weak bedding plane, making method and temperature control system thereof

The invention relates to the field of geomechanics, in particular to a geomechanical temperature sensitive material capable of simulating a weak bedding plane, and a making method and a temperature control system thereof. The material comprises the following components by weight: 45-55 parts of barite powder, 1.8-2.5 parts of cement, 1-4 parts of water, 1-5 parts of 46# waste hydraulic oil, 2-6 parts of paraffin, and 0.5-2 parts of rubber powder. The making method of the material consists of: mixing barite powder, rubber powder and cement uniformly, adding paraffin, 46# waste hydraulic oil and water into the obtained material 1, stirring the materials evenly and conducting molding. The material provided by the invention can be used in a temperature control system for temperature control experiment, and the system includes carbon fiber heating wires, a high precision temperature controller, non-wire breakage T type wiring terminals, a first group of lead, an air switch and a power supply. Multiple groups of the carbon fiber heating wires are placed in the geomechanical temperature sensitive material capable of simulating a weak bedding plane, and is connected to the first group of lead by a parallel connection mode. The geomechanical temperature sensitive material provided by the invention can simulate mechanical testing of the weak bedding plane.
Owner:CHINA THREE GORGES UNIV

Method of manufacturing micro LED chip with flip structure

The invention provides a method of manufacturing a micro LED chip with a flip structure. The method comprises the following steps: (1) single side polishing is selected to be carried out on a sapphire substrate to grow GaN epitaxy, an ITO film layer then grows, and Mesa photoetching first and then Isolation photoetching or Isolation photoetching first and then Mesa photoetching are carried out; (2) on a substrate after Mesa photoetching and Isolation photoetching are carried out in step (1), an N-contact pattern and a Passivation pattern are made in an N area; (3) photoetching is carried out on the substrate in the former step, a PN-contact pattern is made in a P area and the N area, vacuum evaporation is carried out on a metal electrode, the thickness is 1 to 3 mum, and a photoresist is removed; (4) an ITO film layer grows on the substrate in the former step, the thickness is 0.5 to 2 mum, photoetching is carried out, a specified pattern is etched, and the photoresist is removed; and (5) back grinding and polishing are carried out on the above substrate, the thickness range is 300 to 500 mum, and manufacturing is completed. The chip maximally utilizes the light emitting surface, and the chip with the same size can have higher brightness and lower energy consumption; and insulation protection is carried out on a possible electric leakage channel, and the electric leakage possibility generated to the chip due to a back process can be reduced.
Owner:合肥彩虹蓝光科技有限公司

Component used for supporting photovoltaic solar module

The invention discloses a component used for supporting and / or protecting a photovoltaic solar module. The component comprises fibers and plastic, wherein the fibers axially penetrate through the component, the plastic serves as a base material, the fibers comprise glass fibers, carbon fibers, metal fibers and a mixture of any of the glass fibers, the carbon fibers and the metal fibers, the plastic is polyurethane, and the weight of the fibers is 30-95% of the total weight of the component. The component used for supporting the photovoltaic solar module has the strength and rigidity which are similar to those of an aluminum frame, excellent electrical insulation property, and corrosion resistance and can be machined with the thermal expansion property of other materials, such as glass, in the photovoltaic module.
Owner:COVESTRO DEUTSCHLAND AG

Automatic anti-collision protecting device in drone formation and application method of automatic anti-collision protecting device

The invention discloses an automatic anti-collision protecting device in drone formation and belongs to the field of drones. The automatic anti-collision protecting device comprises a drone body and is characterized in that a control panel and a catapult column, the catapult column is located at the center of the control panel, a catapult is mounted at the bottom end in the catapult column, a parachute is connected to the upper end of the catapult and located on the inner side of the catapult column, an attitude sensor is mounted at the upper end of the control panel, four mounting slots and grooves are formed in the periphery of the drone body, and graphene sensors are mounted at the inner ends of the mounting slots. The automatic anti-collision protecting device has the advantages that an intelligent transformable material is arranged on the periphery of the drone body, the drone body can be protected through the shape change of the intelligent transformable material after collision,the drone body can keep balance as much as possible after the collision under certain conditions, and the parachute can protect the drone body after the drone body loses control after the collision to allow the drone body to land safely.
Owner:芜湖翼讯飞行智能装备有限公司

Platinum doping method of fast recovery diode

The invention discloses a platinum doping method of a fast recovery diode in the technical field of semiconductor power devices. The platinum doping method comprises the following steps: growing an oxide layer on the front surface of an N-type silicon substrate; forming a doping window on the oxide layer and injecting boron ions to form a P-type doping region, then performing annealing treatment, and forming a thin oxide layer on the surface of the P-type doping region after annealing; forming a contact hole of a front electrode on the thin oxide layer; depositing polycrystalline silicon on the front surface of the oxide layer to form a polycrystalline silicon layer, wherein the polycrystalline silicon is in contact with the P-type doped region through a contact hole; and sputtering or evaporating a platinum metal layer on the back surface of the N-type silicon substrate. The diode chip prepared by the method has shorter turn-off time, smaller reverse overshoot current and higher softness; meanwhile, the electric leakage possibility of the chip is reduced, and the reliability of the chip is improved.
Owner:YANGZHOU GUOYU ELECTRONICS

P-type high-concentration doped silicon and technology for preparing P-channel MOS (Metal Oxide Semiconductor) pipe of BCD (Bipolar, Complementary Metal-Oxide-Semiconductor and Double-Diffusion Metal-Oxide-Semiconductor) products

The invention discloses P-type high-concentration doped silicon and a technology for preparing a P-channel MOS (Metal Oxide Semiconductor) pipe of a BCD (Bipolar, Complementary Metal-Oxide-Semiconductor and Double-Diffusion Metal-Oxide-Semiconductor ) products, aiming at solving the problem of electricity leakage resulting from a lattice defect of the P-type high-concentration doped silicon manufactured with the prior art. A realization method of the technology of the P-type high-concentration doped silicon comprises the steps of conducting low-pressure deposition to form a silicon oxide dielectric layer, photoetching a substrate, defining an injection area, injecting boron ions in the defined injection area and conducting high-temperature annealing on the injected boron ions. According to the embodiment of the invention, before the P-type high-concentration doped silicon is prepared, the impact of the injection of the boron ions onto the surface of the silicon can be relieved by the low pressure deposition of the silicon oxide dielectric layer; the boron ions are injected when iron injection is conducted; as the molecular weight of the boron ions is smaller, the injected energy is smaller and the impact to the surface of the silicon is reduced; and in addition, as the injected impurities do not contain fluorine atoms, the defect problems caused by the fluorine atoms are avoided, and thus, the risk of generating the lattice defect is reduced and the probability of electricity leakage is lowered.
Owner:FOUNDER MICROELECTRONICS INT

Flowerpot for street

The present invention relates to a flowerpot for landscaping streets, which may be freely relocated and provide more attractive streetscapes through a self light emission function using sunlight. Specifically, the present invention provides a flowerpot for street including a body providing a vegetation part for planting; a driving means that is installed in the body to generate power using sunlight; and a light emission means that is installed in the body to externally emit light using the power. Consequently, the flowerpot for street according to the present invention does not require separate power lines and thus possibility of short circuits and power leakage may be reduced and unnecessary installation procedures such as embedding power lines may be significantly simplified. Further continuous maintenance fees such as electric charges may be saved. Moreover, since the flowerpot is free to be relocated, there is no limitation in selecting and changing the installation site.
Owner:SUPURO

Shore power cable management device

The invention relates to a shore power cable management device. The shore power cable management device comprises a mounting frame, a coiling block, a driving motor and a paying-off power-assisting mechanism, the coiling block is rotationally assembled on the mounting frame, and the driving motor is used for driving the coiling block to rotate; the paying-off power-assisting mechanism comprises adriving roller and a driven roller which are parallelly arranged in a spaced mode, and a clamping space used for clamping a cable is arranged between the driving roller and the driven roller; the driving roller is in transmission connection with the coiling block, a engaging and disengaging device is arranged on a transmission path of the driving roller and the coiling block, and the engaging anddisengaging device is disengaged during taking-up of the coiling block and engaged during paying-off of the coiling block; and during paying-off, the cable passes through the clamping space between the driving roller and the driven roller and is clamped by the driving roller and the driven roller for paying-off, the clamping paying-off speed of the driving roller and the driven roller is greater than the paying-off speed of the coiling block, and thus the cable between the coiling block and the paying-off power-assisting mechanism is kept to be tensioned. The shore power cable management device is used for solving the problem that an existing shore power cable management system has potential safety hazards during using.
Owner:XJ POWER CO LTD +2

High-thermal-conductivity insulating cooling fin for new energy battery and preparation method of high-thermal-conductivity insulating cooling fin

The invention relates to a high-thermal-conductivity insulating cooling fin for a new energy battery and a preparation method thereof.The high-thermal-conductivity insulating cooling fin comprises a heat conduction layer and a heat conduction insulating layer connected with the heat conduction layer, the heat conduction layer is a graphene heat conduction cooling film, the heat conduction insulating layer is formed by coating an insulating heat conduction coating, and the graphene heat conduction cooling film is prepared from, by weight, 4, 4, 5, 6-tetramethyl-3, 5-pentanediol monoisobutyrate, the graphene composite material is prepared from the following components in parts by weight: 35 to 45 parts of 4, 4 '-oxydiphthalic anhydride, 32 to 43 parts of 4, 4'-diaminodiphenyl ether, 120 to 130 parts of N-methyl-2-pyrrolidone, 5 to 8 parts of hexagonal boron nitride, 20 to 30 parts of graphene and 1 to 2 parts of coupling agent. The insulating heat-conducting coating is prepared from the following raw materials in parts by weight: 20-30 parts of an insulating heat-conducting agent, 1-1.5 parts of an ethylene-ethyl acrylate copolymer and 30-40 parts of a diluent; the insulating heat-conducting agent is prepared from methyl phenyl silicone oil and insulating heat-conducting filler. The cooling fin has the advantages of being good in insulation performance and heat dissipation effect.
Owner:DONGGUAN HONGYI THERMAL CONDUCTMTY MATERIAL CO LTD

PTC heater

The invention discloses a PTC heater. The PTC heater comprises a PTC heater body (1), and the PTC heater body (1) comprises a heat conducting body (2), a PTC heating unit (5), an end cover (6), a water inlet coupler (7) and a water outlet coupler (8), wherein the heat conducting body (2) is internally provided with at least one pipeline (3) and at least two liquid circulating channels (4); the pipeline (3) at least is arranged between two adjacent liquid circulating channels (4), and the liquid circulating channels (4) are provided with water inlets and water outlets; and the PTC heating unit(5) is arranged in the pipeline (3), and the end cover (6) is arranged on the end part of the heat conducting body (2), and is used for being connected with the water inlets and the water outlets of the adjacent liquid circulating channels (4).
Owner:ORIENTAL RECREATIONAL PRODS (SHANGHAI) CO LTD

Low-dielectric high-thermal-conductivity composite film and preparation method thereof

The invention relates to the technical field of composite films, in particular to a low-dielectric high-thermal-conductivity composite film and a preparation method thereof. Comprising the following raw materials in parts by weight: 50-70 parts of waterborne polyurethane, 5-8 parts of acrylic acid, 12-18 parts of heat-conducting filler, 0.3-0.5 part of a dispersing agent, 0.2-0.3 part of a defoaming agent, 0.05-0.1 part of a curing agent and 20-30 parts of water. The composite film has a good heat conduction effect and is low in dielectric.
Owner:GUANGDONG SUQUN NEW MATERIAL CO LTD

Intelligent community security robot and security method thereof

The invention discloses an intelligent community security robot and a security method thereof, and belongs to the technical field of community security management. According to the scheme, a patrol robot is remotely controlled to patrol in a community through a remote controller, and the patrol robot is controlled to move to the vicinity of a charging pile when the electric quantity of the patrolrobot is insufficient; a charging end is promoted to be inserted into a charging groove in the patrol robot, and an induced draft fan is started to generate airflow blowing leftwards, so that on one hand, the charging end can be protected, and the possibility of electric leakage of the charging end when the charging end is not used is reduced; and on the other hand, the possibility that rainwateron the patrol robot drips to the surface of an outer protective coating can be reduced by means of airflow, and meanwhile, the air pressure on the outer side of the outer protective coating is reduced, so that an exchange film is promoted to protrude upwards, the airflow speed can be increased by means of the streamline effect of the exchange film, heating particles have dual effects on oxygen andmoisture, and the dehumidification effects is improved.
Owner:广州驰兴通用技术研究有限公司

Engine test bench water temperature control system

The invention relates to the technical field of engine test equipment and more specifically relates to an engine test bench water temperature control system. The system comprises a PLC and a circulation loop. The circulation loop comprises a water pump, a heating device, a heat exchanger and a liquid supplementing pipe. The water pump, the heating device, the heat exchanger and the liquid supplementing pipe are sequentially communicated through pipelines, the circulation loop is further provided with an end A and an end B which are used for being connected with an engine water inlet and an engine water outlet, the end A is located on a water outlet side of the liquid supplementing pipe, and the end B is located on a water inlet side of the water pump. The PLC is electrically connected witheach part of the circulation loop and is controlled in a centralized manner. The circulation loop further comprises temperature control proportional valves used for adjusting the water temperature inreal time, and the temperature control proportional valves are arranged at a water inlet and a water outlet of the engine, water flow sequentially flows through the water pump, the heating device, the heat exchanger and the liquid supplementing pipe, enters the engine from the end A, then flows out from the end B, and enters the water pump again to circularly flow.
Owner:GUANGZHOU AUTOMIBILE GRP MOTOR

Trench isolation structure and manufacturing method thereof

The invention relates to a trench isolation structure and a manufacturing method thereof. The method comprises: forming a shallow trench with a wide top and a narrow bottom on the surface of a wafer; filling the shallow trench with silicon oxide by depositing; removing a part of the oxide by etching Silicon; form a silicon oxide corner structure at the corner of the top of the shallow trench by thermal oxidation; deposit silicon nitride on the wafer surface to cover the silicon oxide surface and the silicon oxide corner structure surface in the shallow trench; dry etch silicon nitride , removing the silicon nitride on the surface of the silicon oxide in the shallow groove, and forming a silicon nitride residue extending into the groove on the surface of the silicon oxide corner structure; using the silicon nitride residue as a mask, continue to etch downward to form a deep groove; Forming a silicon oxide layer on the sidewall and bottom of the deep trench; depositing polysilicon into the shallow and deep trenches; removing silicon nitride; forming silicon oxide in the shallow trench to cover the polysilicon. The shallow groove of the present invention has a relatively large size, and the formed trench isolation structure can reduce the possibility of electric leakage caused by high-voltage wiring above the trench isolation structure.
Owner:CSMC TECH FAB2 CO LTD

Self-cleaning type anti-condensation distribution box

The invention relates to the technical field of distribution boxes, and particularly relates to a self-cleaning type anti-condensation distribution box. The self-cleaning type anti-condensation distribution box comprises a box body and a box door rotationally connected with the box body, wherein switch equipment parallel to the box door is further vertically mounted on the inner cavity wall of the box body; a cleaning assembly capable of circularly moving in the linear direction is arranged in the inner cavity of the box body; and an air blower is further arranged at the lower end of the box body. According to the self-cleaning type anti-condensation distribution box, a hollow shaft capable of moving in a reciprocating manner is arranged in the inner cavity of the box body, and the hollow shaft can spray air to the outside through a spray head in the moving process, so that dew is prevented from being accumulated on the inner cavity wall of the box body and the switch equipment; and moreover, the hollow shaft further drives two cleaning rollers which abut against the switch equipment and the box door correspondingly to move in the moving process, and the cleaning rollers wipe water stains on the inner walls of the switch equipment and the box door in the moving process, so that the purpose of self-cleaning is achieved, and the possibility of electric leakage of the switch equipment is reduced.
Owner:ANHUI FUHUANG ELECTRIC CONTROL EQUIP

High-voltage discharge plate electrode assembly and high-voltage detoxification apparatus thereof

The invention discloses a high-voltage discharge plate electrode assembly and a high-voltage detoxification apparatus thereof. The high-voltage discharge plate electrode assembly comprises a sealed power box and two electrode covers respectively positioned at two ends of the power box, a high-voltage circuit used for generating high voltage is arranged in the power box, and comprises two output terminals for outputting high voltage; outwardly protruded electrode columns are respectively arranged at two ends of the power box, two electrode columns are connected with two output terminals, through holes are arranged on two electrode covers, the plate electrodes are arranged in two electrode covers, and two electrode columns respectively pass through the through holes of two electrode covers and are connected with the plate electrodes in the corresponding electrode cover. According to the invention, the plate electrodes, the high-voltage circuit and a transmission path between the plate electrode and the high-voltage circuit are protected, electric leakage is prevented, and security is greatly increased.
Owner:珠海市骑健科技有限公司

Vertical water-stop structure and construction method thereof for water conservancy projects

ActiveCN110565584BHigh strengthMeet the purpose of temporarily bearing water pressureDamsDykesWater stopArchitectural engineering
The invention discloses a vertical water-stop structure for water conservancy projects, which comprises a roadbed, a wall body, a base and a blocking plate. The base is located at the bottom of the water and connected to the water side of the roadbed. Rails are welded on the side wall of the body opposite to the column, and the base is also provided with a column; the invention also discloses a construction process of a vertical water-stop structure in a water conservancy project, which includes the following steps: S1: prefabricated concrete slab; S2 : Excavation of foundation pit; S3: Formwork; S4: Binding reinforcement cage; S5: Pouring; S6: Formwork removal; S7: Fixing movable parts. The invention has a novel structure and a simple structure. The blocking plate can automatically rise to a certain height according to the water level. When the water level is higher than the wall, the electric mechanism transmits electric energy through sound waves of a specific frequency, so that the sealing connection between the blocking plate and the track can be quickly realized. Thereby, the height of the vertical waterproof structure is increased, and the purpose of automatic flood prevention without manual operation is realized.
Owner:宁夏晋明建设工程有限公司

Anti-scalding welding clamp

The invention provides an anti-scalding welding clamp. The anti-scalding welding clamp comprises an electric conductor, an insulated handle, an insulated heat isolation cushion block, gasket coupling screws and handle coupling screws. At least one first threaded hole is formed in the lower end face of the electric conductor. The insulated handle is arranged on the electric conductor in a sleeving mode and is provided with at least one first through hole. The insulated heat isolation cushion block is provided with second through holes and second threaded holes. The gasket coupling screws penetrate through the second through holes and are connected with the first threaded holes, so that the insulated heat isolation cushion block is fixed to the electric conductor. The handle coupling screws penetrate through the first through holes and are connected with the second threaded holes, so that the insulated handle and the insulated heat isolation cushion block are fixedly connected. The anti-scalding welding clamp has the beneficial effects that a mounting structure among the insulated heat isolation cushion block, the electric conductor and the insulated handle is optimized, and therefore reliability of the welding clamp is improved, the heat insulating property can be improved obviously, and the probability of electric leakage is lowered.
Owner:宁波旭上工具制造有限公司

Pixel circuit with voltage compensation function and driving method thereof and display panel

The invention discloses a pixel circuit with a voltage compensation function and a driving method thereof and a display panel. The pixel circuit comprises a driving transistor, a first switching tube,a second switching tube, a third switching tube, a fourth switching tube, a fifth switching tube, an energy storage unit, a coupling unit and a light emitting diode. One end of the driving transistorreceives a power supply voltage, the control end of the driving transistor is connected with the energy storage unit, the other end of the fifth switching tube and one end of the third switching tube, and the other end of the driving transistor is connected with the other end of the third switching tube and one end of the fourth switching tube; one end of the second switch tube receives the datasignal, and the other end of the second switching tube is connected with one end of the coupling unit and one end of the first switching tube; the other end of the coupling unit is connected with oneend of a fifth switching tube; the other end of the fourth switching tube is connected with the anode of the light emitting diode; the cathode of the light emitting diode and the other end of the first switching tube are grounded. The pixel circuit provided by the invention meets the requirements of high resolution and narrow frame.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI

P-type high-concentration doped silicon and technology for preparing P-channel MOS (Metal Oxide Semiconductor) pipe of BCD products

The invention discloses P-type high-concentration doped silicon and a technology for preparing a P-channel MOS (Metal Oxide Semiconductor) pipe of a BCD (Bipolar, Complementary Metal-Oxide-Semiconductor and Double-Diffusion Metal-Oxide-Semiconductor ) products, aiming at solving the problem of electricity leakage resulting from a lattice defect of the P-type high-concentration doped silicon manufactured with the prior art. A realization method of the technology of the P-type high-concentration doped silicon comprises the steps of conducting low-pressure deposition to form a silicon oxide dielectric layer, photoetching a substrate, defining an injection area, injecting boron ions in the defined injection area and conducting high-temperature annealing on the injected boron ions. According to the embodiment of the invention, before the P-type high-concentration doped silicon is prepared, the impact of the injection of the boron ions onto the surface of the silicon can be relieved by the low pressure deposition of the silicon oxide dielectric layer; the boron ions are injected when iron injection is conducted; as the molecular weight of the boron ions is smaller, the injected energy is smaller and the impact to the surface of the silicon is reduced; and in addition, as the injected impurities do not contain fluorine atoms, the defect problems caused by the fluorine atoms are avoided, and thus, the risk of generating the lattice defect is reduced and the probability of electricity leakage is lowered.
Owner:FOUNDER MICROELECTRONICS INT
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