31results about How to "Short off time" patented technology

The invention discloses a battery replacement system for secondary side equipment of a power system, which comprises a casing, a battery carrying part and an execution part; The groove, the battery bearing part is installed in the cylindrical groove; the casing is provided with a cavity connecting the inside of the cylindrical groove and the outside of the casing; the actuator is arranged in the cavity. The present invention is a battery replacement system for the secondary side equipment of the power system. By setting the above-mentioned components, when the lead-acid battery is replaced in the power system, the shutdown time is extremely short, which greatly improves the safety of the power system operation and reduces the human and material costs.

The present invention provides a control circuit and a control method for a switch circuit and a switching-mode power supply circuit. The control method comprises following steps: detecting an output voltage or an output current, and adjusting an upper limit value and a lower limit value of an inductor current according to a result of comparing the output voltage or the output current with the corresponding reference; and sampling the inductor current, and controlling a main switch transistor in the circuit to be switched off when a sampling current rises to the upper limit value, and controlling the main switch transistor to be switched on when the sampling current drops to the lower limit value. In the present invention, the inductor current is fast in response without overshoot, the output voltage drops very little, there is no overshoot in a process of voltage recovery, and circuit transient response is fast.

The invention relates to an automatic explosion-preventing device installed on a gas conveying pipeline, which includes a pipeline blocking valve, an actuator is arranged on a bracket in the valve body, and two ends of the actuator are respectively provided with an air inlet pipe and a Outlet pipe, the piston rod of the actuator is connected with the valve core, and the valve core is concentric with the valve sealing surface set on the outlet edge of the valve body. It is characterized in that: a gas generator is set outside the valve body and communicates with the intake pipe; The sensor device is set on the gas transmission pipeline, 40-60m away from the pipeline blocking valve, and its front end extends into the pipeline; a controller is connected with the sensor device and the gas generator. It has the following advantages: it utilizes the characteristics of rapid gas production of the gas generator, and can shut down the gas transmission pipeline in a very short time, effectively preventing the mine gas combustion and explosion disasters from occurring.

A rapid turning-off silicon-on-insulator-lateral insulated gate bipolar transistor (SOI-LIGBT) comprises a buried oxide layer on a P-type substrate, an N-type drift region on the buried layer, a P-type well region and N-type buffer region on the N-type drift region, heavily doped P-type collector region in the N-type buffer region, a heavily doped P-type emitter electrode region and an N-type emitter electrode region in the P-type well region, a gate oxide layer on the surface of the P-type well region, a polysilicon layer on the gate oxide layer, and a first vertical groove which is deep and embedded with oxygen and is arranged in the heavily doped P-type emitter electrode region. The groove is partially extended inward to form first lateral grooves with equal intervals and extending to the drift region. A second vertical groove which is deep and embedded with oxygen is arranged in the heavily doped P-type collector region, and the groove is partially extended inward to form second lateral grooves with equal intervals and extending to the drift region. The grooves are filled with filler which is polysilicon wrapped with an overpressure resistant media. The filler in the drift region is overpressure resistant media.

The invention provides a field stop buffer layer which is formed in an IGBT (Insulated Gate Bipolar Transistor) device. The field stop buffer layer comprises an N type substrate and a P type buried layer formed in the N type substrate. The invention also provides an IGBT device with the field stop buffer region. The IGBT device comprises the field stop buffer layer, an N-epitaxial layer, an IGBT front structure, an anode cavity emission region and a back anode collector electrode, wherein the field stop buffer layer comprises the N type substrate and the P type buried layer formed in the N type substrate; the N-epitaxial layer is formed on the surface of the N type substrate; the IGBT front structure is formed on the surface of the N-epitaxial layer; the anode cavity emission region is formed on the back surface, which is far away from the N-epitaxial layer, of the N type substrate; and the back anode collector electrode is formed on the anode cavity emission region. The invention also provides a manufacture method of the IGBT device with the field stop buffer layer. Through increasing the thickness of the field stop buffer layer and regulating the concentration and the thickness between the P type buried layer and the N type substrate, the current density of the IGBT device is increased, and the conduction loss is reduced.

The invention discloses a novel low end metal oxide semiconductor field effect transistor (MOSFET) / insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and a control method thereof which belong to the field of power electronic driving. The driving circuit comprises a negative pressure clamping driving unit and a BOOST unit which are in circuit connection. The control method includes the following steps: (1) controlling S1 and S4 to be in connection state and S2 and S3 to be in disconnection state; (2) controlling the S1, the S2, the S3 and the S4 to be in the disconnection state and maintaining voltage on a Q gate source electrode at U3; (3) controlling the S2 and the S3 to be in the connection state and the S1 and the S4 to be in the disconnection state, enabling voltage on the Q gate source electrode to be clamped on the voltage U4 and enabling the Q to be disconnected instantaneously; and (4) controlling the S1, the S2, the S3 and the S4 to be in the connection state and maintaining voltage on the Q gate source electrode at U4. The S1, the S2, the S3 and the S4 stand for different MOSFET switch tubes. The driving circuit and the control method improve anti-jamming capability and can effectively prevent error connection of switch devices.

An insulated gate bipolar transistor structure comprises collector metal, a P-type collector region and an N-type base region. The surface of the N-type base region is provided with an N-type carrier storage layer and a groove gates. The groove gates divide the N-type carrier storage layer into strips. The surface of the strip-shaped N-type carrier storage layer is uniformly provided with block-shaped P-type body regions. The block-shaped carrier storage layer is provided with a second-type gate oxide layer connected to a first-type gate oxide layer. The second-type gate oxide layer is provided with a second polysilicon gate connected to a first polysilicon gate. The surfaces of the block-shaped P-type body regions are provided with P-type source regions and N-type source regions and are connected to emitter metal. The structure is characterized in that the surface of the block-shaped carrier storage layer is provided with light-doped shallow P-wells connected to the block-shaped P-type body regions. When the device in conduction, a grid electrode applies a positive grid voltage which is completely exhausted by the light-doped shallow P-wells to realize an injection efficiency enhance effect and enable the device to have a relatively small conduction pressure drop. When the device is turned off, the light-doped shallow P-wells are not completely exhausted, and conductive channels form to accelerate the device turn-off speed.

Embodiments of the present disclosure relate to power semiconductor devices with charge balancing designs. A semiconductor body is formed having vertically spaced apart first and second surfaces. A gate trench extending vertically from the first surface to the second surface of the semiconductor body is formed. A gate electrode and a gate dielectric are formed in the gate trench. A gate dielectric electrically insulates the gate electrode from adjacent semiconductor material. A doped super junction region extending vertically from the bottom of the gate trench to the second surface of the semiconductor body is formed. The doped super junction region includes a first doped pillar region, a second doped pillar region and a third doped pillar region extending vertically from the first surface of the first semiconductor layer and directly adjoining each other. The second stud region is intermediate the first stud region and the third stud region in the lateral direction and has a conductivity type opposite to that of the first and third stud regions.