31results about How to "Short off time" patented technology

The invention belongs to the technical field of semiconductor power devices, and particularly discloses an IGBT (Insulated Gate Bipolar Transistor) power device. The device comprises: a p-type collector region; an n-type field stop region located on the p-type collector region; an n-type drift region located on the n-type field stop region; a plurality of first grooves, a second groove is arrangedat the lower portion of each first groove; gate structures located in the first grooves and the second grooves; p-type body regions located between adjacent first grooves; n-type emitter regions located in the p-type body regions; and n-type hole charge barrier regions located between the n-type drift region and the p-type body regions. The position of the electric field peak value of the IGBT power device in the reverse bias state can be regulated to allow the IGBT power device to have the smaller forward conduction voltage drop and the shorter turn-off time under the same breakdown voltage.

The invention discloses a novel low end metal oxide semiconductor field effect transistor (MOSFET) / insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and a control method thereof which belong to the field of power electronic driving. The driving circuit comprises a negative pressure clamping driving unit and a BOOST unit which are in circuit connection. The control method includes the following steps: (1) controlling S1 and S4 to be in connection state and S2 and S3 to be in disconnection state; (2) controlling the S1, the S2, the S3 and the S4 to be in the disconnection state and maintaining voltage on a Q gate source electrode at U3; (3) controlling the S2 and the S3 to be in the connection state and the S1 and the S4 to be in the disconnection state, enabling voltage on the Q gate source electrode to be clamped on the voltage U4 and enabling the Q to be disconnected instantaneously; and (4) controlling the S1, the S2, the S3 and the S4 to be in the connection state and maintaining voltage on the Q gate source electrode at U4. The S1, the S2, the S3 and the S4 stand for different MOSFET switch tubes. The driving circuit and the control method improve anti-jamming capability and can effectively prevent error connection of switch devices.

The invention discloses a liquid crystal molecule having a five member ring, wherein the liquid crystal molecule in prior art is modified to be the liquid crystal molecule with a five member ring. By using the properties of the five member ring, the rotational viscosity of the liquid molecule in a liquid crystal panel is reduced, enabling the liquid crystal molecule with the five member ring to have a rapid off-time relative to the liquid crystal molecule. Through modifying the five member ring of the liquid crystal molecule, the rotational viscosity of the liquid molecule in a liquid crystal panel is reduced, and furthermore the cross-talk phenomenon in liquid crystal screen caused by the switch from a two-dimensional mode to a three-dimensional mode.

An embodiment of the invention relates to a power semiconductor device with a charge balance design. A semiconductor body having first and second vertically spaced apart surfaces is formed. A gate trench that vertically extends from the first surface of the semiconductor body towards the second surface is formed. A gate electrode and a gate dielectric are formed in the gate trench. The gate dielectric electrically insulates the gate electrode from adjacent semiconductor material. A doped superjunction region vertically extending from a bottom of the gate trench towards the second surface of the semiconductor body is formed. The doped superjunction region includes first, second, and third doped pillars vertically extending from the first surface of the first semiconductor layer and directly adjoining one another. The second pillar is laterally centered between the first and third pillars and has an opposite conductivity type as the first and third pillars.

A drift diffusion layer of a low concentration is formed so as to surround a collector buffer layer having a relatively high concentration including a high-concentration collector diffusion layer in a plane structure. Thereby, current crowding in corner portions of the high-concentration collector diffusion layer is suppressed while maintaining a short turnoff time, and the improvement of breakdown voltage at on-time is realized.

A fast turn-off silicon-on-insulator lateral insulated gate bipolar transistor device, the semiconductor has: a buried oxygen on a P-type substrate, an N-type drift region on the buried layer, a P-type well region and a N-type buffer area, in the N-type buffer area, there is a heavily doped P-type collector region, in the P-type well region, there are heavily doped P-type emitter regions and N-type emitter regions, in the P-type well region There is a gate oxide layer on the surface, and a polysilicon layer on it. In the heavily doped P-type emitter region, there is a first vertical groove that is as deep as the buried oxygen. A lateral trench extending to the drift region, a second vertical trench is provided in the heavily doped P-type collector region and its depth is as deep as buried oxygen, and the above-mentioned trench partially expands inward to form second transverse trenches with equal spacing The groove extends to the drift region, and all the above grooves are filled with polysilicon wrapped with a pressure-resistant medium, and the filler located in the drift region is a pressure-resistant medium.

The invention relates to switching and switchover devices for DC networks which make it possible to realize - particularly in the event of faults - rapid and reliable switching processes in combination with good overvoltage damping and low energy losses during normal operation.

A drift diffusion layer of a low concentration is formed so as to surround a collector buffer layer having a relatively high concentration including a high-concentration collector diffusion layer in a plane structure. Thereby, current crowding in corner portions of the high-concentration collector diffusion layer is suppressed while maintaining a short turnoff time, and the improvement of breakdown voltage at on-time is realized.

The invention discloses a platinum doping method of a fast recovery diode in the technical field of semiconductor power devices. The platinum doping method comprises the following steps: growing an oxide layer on the front surface of an N-type silicon substrate; forming a doping window on the oxide layer and injecting boron ions to form a P-type doping region, then performing annealing treatment, and forming a thin oxide layer on the surface of the P-type doping region after annealing; forming a contact hole of a front electrode on the thin oxide layer; depositing polycrystalline silicon on the front surface of the oxide layer to form a polycrystalline silicon layer, wherein the polycrystalline silicon is in contact with the P-type doped region through a contact hole; and sputtering or evaporating a platinum metal layer on the back surface of the N-type silicon substrate. The diode chip prepared by the method has shorter turn-off time, smaller reverse overshoot current and higher softness; meanwhile, the electric leakage possibility of the chip is reduced, and the reliability of the chip is improved.

An insulated gate bipolar transistor structure comprises collector metal, a P-type collector region and an N-type base region. The surface of the N-type base region is provided with an N-type carrier storage layer and a groove gates. The groove gates divide the N-type carrier storage layer into strips. The surface of the strip-shaped N-type carrier storage layer is uniformly provided with block-shaped P-type body regions. The block-shaped carrier storage layer is provided with a second-type gate oxide layer connected to a first-type gate oxide layer. The second-type gate oxide layer is provided with a second polysilicon gate connected to a first polysilicon gate. The surfaces of the block-shaped P-type body regions are provided with P-type source regions and N-type source regions and are connected to emitter metal. The structure is characterized in that the surface of the block-shaped carrier storage layer is provided with light-doped shallow P-wells connected to the block-shaped P-type body regions. When the device in conduction, a grid electrode applies a positive grid voltage which is completely exhausted by the light-doped shallow P-wells to realize an injection efficiency enhance effect and enable the device to have a relatively small conduction pressure drop. When the device is turned off, the light-doped shallow P-wells are not completely exhausted, and conductive channels form to accelerate the device turn-off speed.

The invention relates to an independent voltage patrol inspecting module of a super capacitor group, which comprises a wire connecting terminal that is used for connecting the super capacitor group, a plurality of analog switches that are supplied with power by the super capacitor group, an operational amplifier, an A / D converter, a single chip and a bus communication module. The independent input and output ends of a plurality of the analog switches are connected with the wire connecting terminal, all the common input and output ends of the analog switches are connected with the input end of the operational amplifier, the output end of the operational amplifier is connected with the input end of the A / D converter, the output end of the A / D converter is connected with the bus communication module by the singlechip, and a digital I / O port of the singlechip is connected with a control pin of the analog switches. Compared with the prior art, the independent voltage patrol inspecting module of the super capacitor group has high precision, small volume, long service life, ultra-low power consumption and wide application range.

The invention provides an all-solid-state DC circuit breaker, and the circuit breaker comprises a switching module which is electrically connected between a converter and a load; a current detection module which is electrically connected between the switch module and the load and is used for detecting the current input into the load; a pulse distribution module, wherein a first input end of the pulse distribution module is electrically connected with an external control system, a second input end of the pulse distribution module is electrically connected with a signal output end of the currentdetection module, and the pulse distribution module is used for outputting a first control signal when receiving an external control signal sent by the external control system, and judging the received current corresponding to the electric signal output by the current detection module so as to output a second control signal when the received current corresponding to the electric signal output bythe current detection module exceeds a preset threshold value; and a driving module which is used for controlling the switch module to act according to the control signal output by the pulse distribution module. The all-solid-state direct-current circuit breaker provided by the invention is compact in structure, short in turn-off time and small in turn-off overvoltage.

The invention discloses an all-solid-state direct current circuit breaker and a control method thereof. The all-solid-state DC circuit breaker comprises a drive control circuit and a power electroniccircuit which are correspondingly connected. The driving control circuit is used for sending a control signal to the power electronic circuit. The power electronic circuit comprises a bidirectional through-flow assembly and an IGBT module assembly which are correspondingly connected. The bidirectional through-flow assembly is used for realizing bidirectional through-flow of the all-solid-state direct-current circuit breaker; and the IGBT module assembly is used for realizing connection and disconnection of the all-solid-state direct-current circuit breaker according to the control signal and controlling the magnitude of current passing through the all-solid-state direct-current circuit breaker during connection. The all-solid-state direct-current circuit breaker can effectively solve the problems that arc discharge and arc extinction are difficult when the circuit breaker is switched off, and the through-current capacity of an existing all-solid-state direct-current circuit breaker isnot high, and the all-solid-state direct-current circuit breaker is simple in structure, compact in design, low in cost and convenient to install and maintain.

A fast turn-off silicon-on-insulator lateral insulated gate bipolar transistor, with buried oxygen on a P-type substrate, an N-type drift region on the buried oxygen, an N-type buffer zone and a P-type body on it In the N-type buffer area, there is a P-type collector area, which is connected to the collector metal, and an N-type emitter area is set in the P-type body area, and a P-type emitter area is set on the right side of it. The emitter metal is connected to the electrode area, a field oxygen layer is provided above the N-type drift area, and a longitudinal groove is provided on the left side of the N-type emitter area, and a silicon dioxide or other pressure-resistant medium is arranged inside. The polysilicon layer is connected with a gate metal, and a P-type emitter block is provided on the left side of the vertical groove, and an emitter metal is connected thereon, and a vertical groove is arranged between the field oxygen layer and the P-type emitter region. A groove, in which a polysilicon layer wrapped by silicon dioxide or other pressure-resistant medium is provided, on which a gate metal is connected, and an oxide layer is provided between the gate metal and the emitter metal.

A battery replacement system for secondary side equipment of a power system includes a shell, a battery carrier and an actuator. The battery carrier is cylindrical, a cylindrical groove matched with the battery carrier is arranged on the shell, and the battery carrier is mounted in the cylindrical groove; The shell is provided with a cavity connecting the inside of the cylindrical groove and the outside of the shell; and the actuator is arranged in the cavity. According to the battery replacement system for secondary side equipment of a power system, through the abovementioned components, theeffect is achieved that in replacement ofa lead-acid battery of the power system, the turn-off time is very short, the safety of power system operation is greatly improved, and the cost of manpower and material resources is reduced.

An embodiment of the present invention provides a semiconductor device and a manufacturing method thereof. The device includes an epitaxial layer with opposing first and second surfaces, a base regionwhich is formed by extending from the first surface toward the interior of the epitaxial layer, an emission region which is formed by extending from the first surface to the interior of the base region, a blind hole which is formed in the epitaxial layer and is formed by recessing from the second surface toward the interior of the epitaxial layer, a collector region which is around the blind holeand is set in an area of the epitaxial layer corresponding to a side wall and a bottom surface of the blind hole, a second collecting electrode which is set on a surface of the blind hole facing thehollow part of the bind hole, and a first collecting electrode which is set on the second surface and is electrically connected to the first collecting electrode. According to the semiconductor deviceprovided by the embodiment of the invention, the turn-off time can be shortened, the turn-on voltage drop is reduced, and the conductance modulation effect is improved.

A rapid turning-off silicon-on-insulator-lateral insulated gate bipolar transistor (SOI-LIGBT) comprises a buried oxide layer on a P-type substrate, an N-type drift region on the buried layer, a P-type well region and N-type buffer region on the N-type drift region, heavily doped P-type collector region in the N-type buffer region, a heavily doped P-type emitter electrode region and an N-type emitter electrode region in the P-type well region, a gate oxide layer on the surface of the P-type well region, a polysilicon layer on the gate oxide layer, and a first vertical groove which is deep and embedded with oxygen and is arranged in the heavily doped P-type emitter electrode region. The groove is partially extended inward to form first lateral grooves with equal intervals and extending to the drift region. A second vertical groove which is deep and embedded with oxygen is arranged in the heavily doped P-type collector region, and the groove is partially extended inward to form second lateral grooves with equal intervals and extending to the drift region. The grooves are filled with filler which is polysilicon wrapped with an overpressure resistant media. The filler in the drift region is overpressure resistant media.

The invention discloses a battery replacement device for secondary side equipment in a power system, which comprises a casing, a battery carrying part and an execution part; The groove, the battery bearing part is installed in the cylindrical groove; the casing is provided with a cavity connecting the inside of the cylindrical groove and the outside of the casing; the actuator is arranged in the cavity. The invention is a battery replacement device for secondary side equipment in a power system. By setting the above-mentioned components, the shutdown time is extremely short when the lead-acid battery is replaced in the power system, which greatly improves the safety of the power system operation and reduces the human and material costs.

The invention provides a field stop buffer layer which is formed in an IGBT (Insulated Gate Bipolar Transistor) device. The field stop buffer layer comprises an N type substrate and a P type buried layer formed in the N type substrate. The invention also provides an IGBT device with the field stop buffer region. The IGBT device comprises the field stop buffer layer, an N-epitaxial layer, an IGBT front structure, an anode cavity emission region and a back anode collector electrode, wherein the field stop buffer layer comprises the N type substrate and the P type buried layer formed in the N type substrate; the N-epitaxial layer is formed on the surface of the N type substrate; the IGBT front structure is formed on the surface of the N-epitaxial layer; the anode cavity emission region is formed on the back surface, which is far away from the N-epitaxial layer, of the N type substrate; and the back anode collector electrode is formed on the anode cavity emission region. The invention also provides a manufacture method of the IGBT device with the field stop buffer layer. Through increasing the thickness of the field stop buffer layer and regulating the concentration and the thickness between the P type buried layer and the N type substrate, the current density of the IGBT device is increased, and the conduction loss is reduced.

The embodiment of the invention discloses an insulated gate bipolar transistor and a manufacturing method thereof. The insulated gate bipolar transistor comprises a collector region, a buffer region and a drift region; the collector region comprises a first type doped region and a second type doped region; the doping concentration of the first type doped region is greater than that of the second type doped region; the buffer region is located above the first type doped region; the doping type of the buffer region is different from the doping type of the first type doped region; the drift region is located above the buffer region and the second type doped region; the doping concentration of the drift region is smaller than that of the buffer region.

The invention discloses a novel low end metal oxide semiconductor field effect transistor (MOSFET) / insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and a control method thereof which belong to the field of power electronic driving. The driving circuit comprises a negative pressure clamping driving unit and a BOOST unit which are in circuit connection. The control method includes the following steps: (1) controlling S1 and S4 to be in connection state and S2 and S3 to be in disconnection state; (2) controlling the S1, the S2, the S3 and the S4 to be in the disconnection state and maintaining voltage on a Q gate source electrode at U3; (3) controlling the S2 and the S3 to be in the connection state and the S1 and the S4 to be in the disconnection state, enabling voltage on the Q gate source electrode to be clamped on the voltage U4 and enabling the Q to be disconnected instantaneously; and (4) controlling the S1, the S2, the S3 and the S4 to be in the connection state and maintaining voltage on the Q gate source electrode at U4. The S1, the S2, the S3 and the S4 stand for different MOSFET switch tubes. The driving circuit and the control method improve anti-jamming capability and can effectively prevent error connection of switch devices.

The invention provides a stable platform servo control system, and aims to solve the technical problems that a traditional motor servo control system cannot meet the control precision requirement of the system, mechanical resonance is difficult to restrain, and the size and the weight are large. The stable platform servo control systemincludes a DC / DC, an azimuth motor arranged on an azimuth shaft, an azimuth fiber-optic gyroscope, an azimuth encoder arranged on an output shaft of the azimuth motor, an azimuth shaft control assembly, a pitching motor arranged on a pitching shaft, a pitching fiber-optic gyroscope, a pitching encoder arranged on an output shaft of the pitching motor, and a pitching shaft control assembly. The control assembly comprises an FPGA, a DSP, a three-phase bridge, a PWM drive circuit, a current acquisition circuit, an AD conversion circuit and a communication circuit. The DSP comprises a position loop controller, a speed loop controller, a current loop controller, a digital wave trap and a PWM generator, and is used for realizing an SVPWM control algorithm or an SPWM control algorithm and a current, speed and position three-closed-loop control algorithm of an azimuth axis.

Embodiments of the present application provide a dimming method and device for an OLED display screen applied to two-dimensional code scanning. In this method, after the terminal device detects that the two-dimensional code appears on the display interface, it increases the light-on time of all pixels in the area used to display the two-dimensional code, so that the light-off time of each pixel is shortened. When the scanning device scans the QR code displayed by the terminal device, at least all pixels in the area where the QR code is located will maintain a short extinguishing time to ensure that most of the pixels read by the scanning device can be in the In the lighted state, the number and width of black diagonal lines can be reduced, or even eliminated, so that the scanning device can quickly identify the QR code, improving the recognition efficiency and accuracy. In addition, when it is detected that the QR code on the display interface is turned off, the lighting time of the target pixel is restored to the initial lighting time, so that the full-screen brightness of the display screen is restored to adapt to the ambient brightness, and the power consumption of the display screen is reduced.

An insulated gate bipolar transistor structure comprises collector metal, a P-type collector region and an N-type base region. The surface of the N-type base region is provided with an N-type carrier storage layer and a groove gates. The groove gates divide the N-type carrier storage layer into strips. The surface of the strip-shaped N-type carrier storage layer is uniformly provided with block-shaped P-type body regions. The block-shaped carrier storage layer is provided with a second-type gate oxide layer connected to a first-type gate oxide layer. The second-type gate oxide layer is provided with a second polysilicon gate connected to a first polysilicon gate. The surfaces of the block-shaped P-type body regions are provided with P-type source regions and N-type source regions and are connected to emitter metal. The structure is characterized in that the surface of the block-shaped carrier storage layer is provided with light-doped shallow P-wells connected to the block-shaped P-type body regions. When the device in conduction, a grid electrode applies a positive grid voltage which is completely exhausted by the light-doped shallow P-wells to realize an injection efficiency enhance effect and enable the device to have a relatively small conduction pressure drop. When the device is turned off, the light-doped shallow P-wells are not completely exhausted, and conductive channels form to accelerate the device turn-off speed.

The embodiment of the invention discloses an optical heterodyne cavity ring-down spectrum measurement device and method. The measuring device includes a laser light source for generating a laser beam, a modulation optical path mechanism, a passive resonant cavity for receiving the laser beam modulated by the modulation optical path mechanism and interferentially superimposing the laser beam, and for receiving the interferometric superposition A laser beam and an optical heterodyne detection mechanism that generates an electrical signal, a data processing mechanism that receives the electrical signal and judges the relationship between the electrical signal and a preset threshold, if the electrical signal is greater than the preset threshold, the data processing mechanism An instruction to turn off the laser light source is issued, and the data collection circuit collects, draws the ring-down curve and calculates the concentration of the trace substance to be measured. The measuring device and method can improve the measuring precision, have simple operation and low cost.

The invention relates to an independent voltage patrol inspecting module of a super capacitor group, which comprises a wire connecting terminal that is used for connecting the super capacitor group, a plurality of analog switches that are supplied with power by the super capacitor group, an operational amplifier, an A / D converter, a single chip and a bus communication module. The independent input and output ends of a plurality of the analog switches are connected with the wire connecting terminal, all the common input and output ends of the analog switches are connected with the input end ofthe operational amplifier, the output end of the operational amplifier is connected with the input end of the A / D converter, the output end of the A / D converter is connected with the bus communication module by the singlechip, and a digital I / O port of the singlechip is connected with a control pin of the analog switches. Compared with the prior art, the independent voltage patrol inspecting module of the super capacitor group has high precision, small volume, long service life, ultra-low power consumption and wide application range.

Embodiments of the present disclosure relate to power semiconductor devices with charge balancing designs. A semiconductor body is formed having vertically spaced apart first and second surfaces. A gate trench extending vertically from the first surface to the second surface of the semiconductor body is formed. A gate electrode and a gate dielectric are formed in the gate trench. A gate dielectric electrically insulates the gate electrode from adjacent semiconductor material. A doped super junction region extending vertically from the bottom of the gate trench to the second surface of the semiconductor body is formed. The doped super junction region includes a first doped pillar region, a second doped pillar region and a third doped pillar region extending vertically from the first surface of the first semiconductor layer and directly adjoining each other. The second stud region is intermediate the first stud region and the third stud region in the lateral direction and has a conductivity type opposite to that of the first and third stud regions.