Semiconductor device and manufacturing method thereof

Abstract

An embodiment of the present invention provides a semiconductor device and a manufacturing method thereof. The device includes an epitaxial layer with opposing first and second surfaces, a base regionwhich is formed by extending from the first surface toward the interior of the epitaxial layer, an emission region which is formed by extending from the first surface to the interior of the base region, a blind hole which is formed in the epitaxial layer and is formed by recessing from the second surface toward the interior of the epitaxial layer, a collector region which is around the blind holeand is set in an area of the epitaxial layer corresponding to a side wall and a bottom surface of the blind hole, a second collecting electrode which is set on a surface of the blind hole facing thehollow part of the bind hole, and a first collecting electrode which is set on the second surface and is electrically connected to the first collecting electrode. According to the semiconductor deviceprovided by the embodiment of the invention, the turn-off time can be shortened, the turn-on voltage drop is reduced, and the conductance modulation effect is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) combines the MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) structure and the working mechanism of bipolar transistors. In the field of power semiconductors, the IGBT structure is proposed to achieve the coexistence of high withstand voltage and low loss. , In the current medium and high power applications, especially the applications above 1000V, IGBT has a strong performance advantage. [0003] When the traditional IGBT is turned off, it takes a certain amount of time to extract the minority carriers injected from the collector layer from the drift region, resulting in a significant increase in the turn-off time, thus limiting the operating frequency of the IGBT. In addition, the conduction voltage drop of the IGBT during forward ...

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Problems solved by technology

[0003] When the traditional IGBT is turned off, it takes a certain amount of time to extract the minority carriers that have been injected into the collector layer from the drift region, resulting in a significant increase in the turn-off time, thus limiting the operating frequency of the IGBT

In addition, the conduction voltage drop when the IGBT is in the forward conduction is relatively large

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