The invention belongs to the field of power semiconductors, and specifically provides a SiC power device, including a SiC MOSFET and a SiC IGBT; wherein: for a SiC MOSFET device integrated with a PN junction body diode, the reverse recovery charge of the body diode and related losses can be greatly reduced , Reduce the reverse recovery peak current, reduce EMI noise; for SiC MOSFET devices with integrated N-type Schottky diodes or integrated heterojunction diodes, it can reduce the voltage drop when the MOSFET is reversed, eliminate the minority carrier injection effect, thereby reducing the diode Conduction loss and reverse recovery loss; for reverse-conducting SiC IGBT devices with integrated PN junction body diodes, it can greatly reduce the reverse recovery charge of the body diode and related losses, reduce the reverse recovery peak current, and reduce EMI noise; For the reverse conduction SiC IGBT device integrated with N-type Schottky diode or heterojunction diode, it can reduce the voltage drop when the reverse conduction IGBT conducts in reverse, eliminate the minority carrier injection effect, and reduce the diode conduction loss and reverse recovery loss.