34results about How to "Increased output voltage swing" patented technology

Adaptive rail power amplifier technology processes an audio signal by feeding the audio signal to the power amplifier to produce an output signal, applying positive and negative power supply voltages centered with respect to the audio signal to the positive and negative power supply rails of the power amplifier, comparing the output signal with the positive and negative power supply rail voltages to produce dynamically varying positive and negative control signals, feeding the positive and negative control signals to positive and negative high current charge pumps and adding supplemental positive and negative voltages from the positive and negative charge pumps to the positive and negative power supply rails to produce a linear adaptive rail voltage which tracks the output signal.

The invention discloses a radio-frequency power amplifier with a stack structure. The radio-frequency power amplifier comprises an input matching circuit, an output broadband matching circuit, a biasing circuit A, a biasing circuit B and a power amplification circuit, and the power amplification circuit is formed by stacking of at least two transistors with drains and sources connected. A radio-frequency signal source is connected with a grid electrode of the bottom transistor of the power amplification circuit through the input matching circuit, the biasing circuit B is connected with the grid electrode of the bottom transistor, and the source of the bottom transistor is grounded. The drain of the top transistor of the power amplification circuit is connected with a load through the output broadband matching circuit. Integral linearity, output voltage swing, operation bandwidth, power efficiency, power gain and maximum output power of the radio-frequency power amplifier are increased, and excellent second harmonic inhibition effects are achieved.

Voltage controlled oscillator (VCO) has been widely used in radio frequency communication systems. In a typical VCO implementation, a pair of directly cross-coupled MOS transistors is used as a switching device and an LC resonant circuit is used to tune the desired frequency. The direct cross coupling of the MOS transistor pair will result in limited output voltage swing since a large swing may cause the MOS transistors into a linear region to increase phase noise. The VCO system to increase the output voltage swing according to one embodiment of the present invention includes DC-blocking capacitors to avoid direct cross coupling of the MOS pair. The VCO further includes circuit to provide bias for the gate voltage of the MOS pair. A method for increasing the output voltage swing is disclosed for a VCO system having LC resonant circuit. The method includes providing DC-blocked cross coupling from the drains of the cross-coupled transistor pair to the gates of the cross-coupled transistor pair. The method also includes providing an offset voltage to the gates of the cross-coupled transistor pair to reduce the maximum gate-to-drain voltage of a cross-coupled NMOS transistor pair or maximum drain-to-gate voltage of a cross-coupled PMOS transistor pair so that the cross-coupled transistor pair will work in a saturation region when the output voltage swing is increased.

The invention discloses a radio frequency power amplifier in a two-stage stack structure, comprising an input matching circuit, an output bandwidth matching circuit, and a two-stage amplifier circuit formed by cascading interstage matching circuits. A preceding stage of the two-stage amplifier circuit is a driving stage, and a following stage thereof is a power stage; a radio frequency signal source is connected with a gate electrode of a transistor in the bottommost layer of the driving stage through the input matching circuit, a drain electrode of a transistor in the uppermost layer of the driving stage is connected with one end of the corresponding interstage matching circuit, the other end of this interstage matching circuit is connected with a gate electrode of a transistor in the bottommost layer of the power stage, and a drain electrode of a transistor in the uppermost layer of the power stage is connected with a load through the output bandwidth matching circuit. This circuit enables improvements in the voltage withstand capacity, output voltage swing, operation bandwidth, power efficiency, power gain and maximum output power of the power amplifier and provides better harmonic suppression effect.

A ring oscillator stage includes two differential transistor pairs configured to add an adjustable amount of delay to a differential input signal. Each differential pair is biased with a bias current transistor; the bias current transistor is “protected” by a voltage-clamping transistor that limits the drain voltage of the bias current transistor. The voltage-clamping transistors enable use of a power supply voltage (VDD) that would otherwise exceed the reliability breakdown voltage limit of the bias current transistors.

For use in professional audio amplifier applications, high current charge pump circuits including charge circuits and dynamic release circuits are connected between respective storage capacitors and the audio power amplifier output. The charge circuits charge their storage capacitors when an output signal swing of the power amplifier is below a corresponding predetermined positive and negative threshold. The dynamic release circuits release power from their charged storage capacitors to dynamically vary the voltage levels of their positive and negative power supply rails in direct relation to the output signal swing of the power amplifier, preferably at unity gain. Multiple positive and negative power supply rails at different voltage levels can be used with cascaded multi-stage dynamic release circuits to maximize system efficiency. The charge and dynamic release circuits can be connected between their storage capacitors and a buffer amplifier which also receives the power amplifier audio input.

A current mirror includes a serially connected diode-connected transistor of a first conductivity type, a saturated (fully-on) transistor of a second conductivity type, and a current source for providing a reference current. A gate voltage generated by the diode-connected transistor in response to the reference current is provided to the gate of a matching transistor. This causes the matching transistor to mirror the reference current. Meanwhile, an output transistor cascoded with the matching transistor is gate-coupled to the junction between the saturated transistor and the current source. This allows the output transistor to provide an output voltage swing from one supply voltage to two saturation voltage drops from the second supply voltage. Meanwhile, the cascode configuration gives the current mirror a high output impedance.

The invention discloses a CMOS low-gain wide-tuning-range fully integrated Ka-band millimeter wave quadrature voltage-controlled oscillator. A MOS variable capacitor tube array directly controlled by high and low levels is added into an oscillator resonant cavity to switch access capacitance so as to achieve multi-subband tuning for obtaining low-tuning gain, a wide regulating range, and good phase noise performance. In addition, a coplanar waveguide linear inductor used in the voltage-controlled oscillator has a high quality factor in order to achieve better phase noise performance. A circuit directly outputs a differential orthogonal signal with a high orthogonal precision (less than 1 degree). The phase noise of the voltage-controlled oscillator may reach -107.3dBc / Hz and -129.6dBc / Hz at the frequency offset 1MHz and 10MHz at the center frequency 30GHz, respectively. The voltage-controlled oscillator has total power consumption of 80mW, and can be used as a local oscillation signal source in a Ka-band wireless communication system or a voltage-controlled oscillator in a frequency synthesizer.

Adaptive rail power amplifier technology processes an audio signal by feeding the audio signal to the power amplifier to produce an output signal, applying positive and negative power supply voltages centered with respect to the audio signal to the positive and negative power supply rails of the power amplifier, comparing the output signal with the positive and negative power supply rail voltages to produce dynamically varying positive and negative control signals, feeding the positive and negative control signals to positive and negative high current charge pumps and adding supplemental positive and negative voltages from the positive and negative charge pumps to the positive and negative power supply rails to produce a linear adaptive rail voltage which tracks the output signal.

The invention belongs to the field of high-frequency millimeter wave equipment and technologies, and particularly relates to a novel millimeter wave broadband high-gain power amplifier. The power amplifier mainly comprises a differential common-source amplifier and two LC resonance circuits connected to the gate and drain ends of the differential common-source amplifier in a crossed mode. According to the amplifier, the resonance circuit is connected to the gate and drain ends of the differential common source circuit in a crossed mode, a double-peak Gmax curve is obtained through the resonance circuit and the equivalent neutralization capacitance effect of the resonance circuit at high frequency, the bandwidth of the amplifier is greatly expanded, and the high-frequency gain is improved;as the resonance circuit formed by connecting the inductor and the capacitor in parallel replaces three sections of transmission lines in the traditional structure, the circuit structure is greatly simplified, and the design complexity is reduced; meanwhile, a traditional single-ended structure is expanded into a differential structure, and the output voltage swing is increased, so the output power is improved; therefore, the power amplifier with the structure is more beneficial to practical application in engineering.

A current mirror includes a serially connected diode-connected transistor of a first conductivity type, a saturated (fully-on) transistor of a second conductivity type, and a current source for providing a reference current. A gate voltage generated by the diode-connected transistor in response to the reference current is provided to the gate of a matching transistor. This causes the matching transistor to mirror the reference current. Meanwhile, an output transistor cascoded with the matching transistor is gate-coupled to the junction between the saturated transistor and the current source. This allows the output transistor to provide an output voltage swing from one supply voltage to two saturation voltage drops from the second supply voltage. Meanwhile, the cascode configuration gives the current mirror a high output impedance.

The invention discloses a multi-octave ultra-broadband amplifier circuit, which comprises a cascode structure stacked by three transistors, an active-passive hybrid bias circuit and a power supply VDD, wherein the three transistors in the cascode structure are a transistor M1, a transistor M2 and a transistor M3 respectively, wherein the grids of the transistor M1, the transistor M2 and the transistor M3 and the active-passive hybrid bias circuit are all connected to the power supply VDD; the source of the transistor M1 is connected to the ground; the grid of the transistor M2 is connected tothe ground through a capacitor C2; and the grid of the transistor M3 is connected to the ground through a capacitor C3. The source of the transistor M2 is connected to the drain of the transistor M1,the drain of the transistor M2 is connected to the source of the transistor M3, and the drain of the transistor M3 is connected to the active-passive hybrid bias circuit. According to the multi-octaveultra-broadband amplifier circuit, the working frequency covers megahertz (MHz) to gigahertz (GHz), the bandwidth is equivalent to a distributed amplifier, and the unit circuit gain performance, thepower consumption and the chip area are better than a distributed structure.

The invention discloses a wide-band active feedback transimpedance amplifier for low voltage operation. The amplifier is composed of a common-grid main amplifier composed of a resistor R1, a resistorRs and a MOS transistor M1, and a common-source active feedback circuit composed of a MOS transistor M2. A bias voltage is added to the gate of the MOS transistor M1 of the transimpedance amplifier, thereby replacing the gate bias of the common gate input transistor of the regulating cascode structure and reducing the voltage redundancy consumption; The transimpedance amplifier uses a common-gateinput terminal with common-source active feedback to achieve an input impedance similar to that of a regulated cascode structure, thereby isolating the effect of input parasitic capacitance on the bandwidth. A capacitive degradation circuitry is added to the transimpedance amplifier to produce zero points that cancel poles, extending bandwidth while increasing the gain of the voltage. The invention can realize the monolithic integration of the analog front end and the digital signal processing back end of the optical receiver with high performance on the same chip, reduce the cost and enhancethe function.

The invention claims a fast response charge pump circuit for a phase-locked loop, comprising a self-biasing cascode bias circuit, a DN differential fractional-mode conversion circuit, a replica circuit, a charge-discharge circuit and a UP differential fractional-mode conversion circuit, wherein the charge-discharge circuit comprises a self-biasing cascode bias circuit, a DN differential fractional-mode conversion circuit and a UP differential fractional-mode conversion circuit. A self-biasing cascode bias circuit is used to provide current bias for the core circuit of the charge pump. The channel length modulation effect of a single MOS transistor is effectively overcome, and the matching accuracy of the charge current and the discharge current of the charge pump is improved. Compared withthe traditional cascode bias circuit, the output voltage swing of the charge pump circuit is improved, and the power supply voltage is reduced. The charge / discharge current is supplied by the upper and lower current sources, which restrains the change of charge / discharge current with the output voltage and improves the matching range of charge / discharge current of the charge pump. Using the sameswitch tube as the charge pump switch, the inherent mismatch between different switch tubes can be avoided effectively. Positive feedback mechanism is adopted to improve the response speed of the switch.

The invention discloses a high-linearity stacked-structure radio frequency power amplifier. The high-linearity stacked-structure radio frequency power amplifier comprises an input matching circuit, an output broadband matching circuit, a bias circuit A, a bias circuit B, and a power amplification circuit at least formed by two connected and stacked transistor drains and sources, wherein a signal source is connected with a grid of a transistor at the bottom of the power amplification circuit through the input matching circuit, and the bias circuit B is also connected with the grid; the bias circuit A is connected with grids of other transistors of the power amplification circuit, the grids are grounded by connecting a grid capacitor, and sources are grounded by connecting LC series circuit; a drain of a transistor at the top of the power amplification circuit is connected with a load through the output broadband matching circuit. According to the circuit structure of the high-linearity stacked-structure radio frequency power amplifier, the linearity and voltage endurance capability of the radio frequency power amplifier are improved; besides, output voltage swing, operating bandwidth, power efficiency, power gain and maximum output power of the radio frequency power amplifier can be also improved, and a greater secondary harmonic suppression effect is also achieved.

For use in professional audio amplifier applications, high current charge pump circuits including charge circuits and dynamic release circuits are connected between respective storage capacitors and the audio power amplifier output. The charge circuits charge their storage capacitors when an output signal swing of the power amplifier is below a corresponding predetermined positive and negative threshold. The dynamic release circuits release power from their charged storage capacitors to dynamically vary the voltage levels of their positive and negative power supply rails in direct relation to the output signal swing of the power amplifier, preferably at unity gain. Multiple positive and negative power supply rails at different voltage levels can be used with cascaded multi-stage dynamic release circuits to maximize system efficiency. The charge and dynamic release circuits can be connected between their storage capacitors and a buffer amplifier which also receives the power amplifier audio input.

The invention discloses an ultra-low voltage cold start oscillator delay unit based on a deep trap MOS tube. The delay unit comprises PMOS (P-channel Metal Oxide Semiconductor) tubes M1, M3 and M5 andNMOS (N-channel Metal Oxide Semiconductor) tubes M2, M4 and M6, which are manufactured by adopting a deep trap process, wherein substrates of the M1 and M2, substrates of the M3 and M4 and substratesof the M5 and M6 are respectively connected, and a signal input end Vin of the delay unit is connected to the substrates of the PMOS tubes and the NMOS tubes; the gate electrodes of M1 and M2, the gate electrodes of M3 and M4 and the gate electrodes of M5 and M6 are respectively connected and then connected to a signal input end Vin of the delay unit, a drain electrode of M1 is connected with a drain electrode of M2 and serves as a common drain electrode X port, a source electrode of M1 is connected with a power supply, and a source electrode of M2 is grounded. Under the condition of ensuringlow input power supply voltage, the output voltage swing of the delay unit is improved, the direct-current gain of the delay unit is increased, and oscillation can be generated under lower power supply voltage.

The invention discloses a foldable differential-to-single-ended amplifier capable of increasing the swing amplitude of output voltage of an output end. The amplifier comprises a PMOS pair tube and anNMOS pair tube group; the NMOS pair tube group comprises multiple pairs of NMOS pair tubes sequentially connected in series; one pair of pins of the PMOS pair tube are connected with one pair of pinsof the NMOS pair tube group respectively and then separately grounded through a constant current source, and the other pair of pins of the PMOS pair tube are connected to each other and then connectedto the other pair of pins of the NMOS pair tube group through the constant current source. The swing amplitude of the output voltage of the output end in the differential-to-single-ended amplifier can be increased.

The invention relates to an operational amplifier and an analog-digital converter with inductors and double power supplies. The operational amplifier (10) comprises a preamplifier (11) and a master amplifier circuit (13). The preamplifier (11) comprises a first switch (M1), a second switch (M2), a third switch (M3), a fourth switch (M4), a fifth switch (M5), a first inductor (L1) and a second inductor (L2). The master amplifier circuit (13) comprises a sixth switch (M6), a seventh switch (M7), a eighth switch (M8), a ninth switch (M9), a tenth switch (M10), an eleventh switch (M11), a twelfth switch (M12), a thirteenth switch (M13), a first amplifier (131) and a second amplifier (133). According to the embodiment of invention, a composite cascade structure combining a folding structure and a sleeve pipe structure is used, and at the same time serially connected inductors are introduced in the preamplifier to achieve the goal of high gain, high bandwidth and low energy consumption on the precondition of stable operation. The operational amplifier and analog-digital converter with inductor and double power supplies is applicable to the circuits requiring high speed and high precision in different circumstances.

The present invention claims a fast-response charge pump circuit for a phase-locked loop, including a self-biased cascode bias circuit, a DN differential digital-to-analog conversion circuit, a replica circuit, a charge-discharge circuit, and a UP differential digital-to-analog conversion circuit . The self-biased cascode bias circuit is used to provide current bias for the core circuit of the charge pump, which effectively overcomes the channel length modulation effect of a single MOS tube and improves the matching accuracy of the charging current and discharging current of the charge pump. Compared with the cascode bias circuit, the output voltage swing of the charge pump circuit is improved, and the power supply voltage is reduced at the same time; the upper and lower current sources are used to provide the charge and discharge current, which suppresses the change of the charge / discharge current with the output voltage and improves the charge. The charging / discharging current matching range of the pump; the same type of switching tube is used as the switch of the charge pump, which effectively avoids the inherent mismatch between different switching tubes; the positive feedback mechanism is adopted to improve the response speed of the switching tube.

The invention relates to an SET / CMOS latch based on negative differential resistance characteristics. The SET / CMOS latch based on the negative differential resistance characteristics comprises a double-grid single electron transistor, a PMOS tube and an NMOS tube. The SET / CMOS latch based on the negative differential resistance characteristics is characterized in that the source electrode of the PMOS tube is connected with a power source voltage Vdd, the grid electrode of the PMOS tube is used as the input end of the latch, the drain electrode of the PMOS tube is used as the output end of the latch and connected with the drain electrode of the NMOS tube and one grid electrode of the double-grid single electron transistor, the other grid electrode of the double-grid single electron transistor is connected with a control voltage Vctrl, and the source electrode of the double-grid single electron transistor is connected with the ground. Compared with a traditional CMOS latch, the latch has the advantages of being low in power consumption, simple in circuit structure, high in integration degree and the like. Compared with a single electronic latch, the latch is quite high in working voltage and large in output voltage swing, and reduces transmission delay of a circuit.

The invention discloses a CMOS low-gain wide-tuning-range fully integrated Ka-band millimeter wave quadrature voltage-controlled oscillator. A MOS variable capacitor tube array directly controlled by high and low levels is added into an oscillator resonant cavity to switch access capacitance so as to achieve multi-subband tuning for obtaining low-tuning gain, a wide regulating range, and good phase noise performance. In addition, a coplanar waveguide linear inductor used in the voltage-controlled oscillator has a high quality factor in order to achieve better phase noise performance. A circuit directly outputs a differential orthogonal signal with a high orthogonal precision (less than 1 degree). The phase noise of the voltage-controlled oscillator may reach -107.3dBc / Hz and -129.6dBc / Hz at the frequency offset 1MHz and 10MHz at the center frequency 30GHz, respectively. The voltage-controlled oscillator has total power consumption of 80mW, and can be used as a local oscillation signal source in a Ka-band wireless communication system or a voltage-controlled oscillator in a frequency synthesizer.

The invention discloses a neural signal monoamplifier capable of simultaneously achieving low power consumption and low noise. The neural signal monoamplifier comprises a cascade C-type inverter composed of PMOS devices M1 and M3 and NMOS devices M2 and M4; a capacitance feedback circuit composed of two capacitor pairs C1 and C1f, and used for keeping gain of the amplifier stable due to a feedback effect; pseudo resistors PR1 and PR2 composed of two PMOS devices and provided with great equivalent resistance, wherein the PR1 is connected with the grid of a PMOS device M5 of a reference circuit and the grid of the PMOS device M1 of the inverter circuit to provide direct current biasing at the grid of the PMOS device M1, and the PR2 is connected with the output VOUT of the inverter and the grid of the NMOS device M2 of the inverter circuit to provide the direct current biasing at the grid of the NMOS device M2; and a substrate biasing circuit composed of devices M6-M9, used for reducing substrate biasing voltage of the PMOS device M5 of the reference circuit so as to reduce a threshold voltage of the same, and at last enhancing the grid voltage of the M5 to counteract a voltage difference between two ends of the pseudo resistor PR1 under a deep submicron technology, thus achieving a better current mirror image effect.

The invention provides a terahertz oscillator based on negative resistance enhancement, which comprises a plurality of groups of single-core oscillator circuits for outputting oscillation signals, the plurality of groups of single-core oscillator circuits are connected to the same common endpoint A, and the common endpoint A is connected with an output port through a capacitor C and is connected with a power supply voltage through a transmission line TL1; the multiple groups of single-core oscillator circuits are distributed in an annular shape, and the single-core oscillator circuits are connected through transmission lines TL2 and used for power synthesis, so that the phase noise and the output power of the oscillator are improved. According to the terahertz oscillator based on negative resistance enhancement, the transistor is adopted to replace a source electrode degeneration capacitor, stray capacitance is reduced, the oscillator can generate signals of a terahertz frequency band, meanwhile, the effect of enhancing negative resistance is achieved, and it is ensured that the oscillator can be normally started.

The invention relates to an operational amplifier and an analog-to-digital converter powered by dual power supplies with inductance. The operational amplifier (10) includes a preamplifier (11) and a main amplifier stage circuit (13); the preamplifier (11) includes a first switch (M1), a second switch (M2), a third switch ( M3), the fourth switch (M4), the fifth switch (M5), the first inductance (L1) and the second inductance (L2); the main amplifier stage circuit (13) includes the sixth switch (M6), the seventh switch (M7), eighth switch (M8), ninth switch (M9), tenth switch (M10), eleventh switch (M11), twelfth switch (M12), thirteenth switch (M13), The first amplifier (131) and the second amplifier (133). The embodiment of the present invention adopts a composite structure in which a folded structure and a sleeve structure are cascaded, and at the same time introduces a series inductance into the preamplifier to achieve high gain, high bandwidth and low power consumption while ensuring the stability of the operational amplifier, and is suitable for different occasions In circuits with high-speed and high-precision requirements.

The invention discloses a transformer coupling radio frequency power amplifier with a wide adjustment range and a high integration level. The amplifier comprises a single-end to differential circuit, a driving power amplifier circuit, a stage matching network circuit, a power amplifier circuit array and a non-equant serial power coupling transformer unit, wherein the differential output end of the single-end to differential circuit is connected with the differential input end of the non-equant serial power coupling transformer unit via the driving power amplifier circuit, the stage matching network circuit and the power amplifier circuit array in sequence. The transformer coupling radio frequency power amplifier adopts the working mode of adjusting the power amplifier circuit array, thus achieving the wide adjustment range of the transmitting power while ensuring high efficiency of the system, and has the characteristics of wide working frequency band, simple matching circuit and high integration level. The transformer coupling radio frequency power amplifier can be widely applied to the field of radio-frequency technologies.

The invention discloses a DC / DC (direct current to direct current) converter, which is applied to an energy acquiring system; the energy acquiring system comprises a power module and a rectifier; theDC / DC converter comprises an oscillator module and a charge pump module; the oscillator module comprises a first inductor, a second inductor, a third inductor, a fourth inductor, a first capacitor, afirst controllable switch, a second controllable switch; the charge pump module outputs power supply voltage capable of making load work normally according to a clock signal provided by the oscillatormodule. The DC / DC converter is low in oscillation starting voltage and easy to integrate; the energy acquiring cost is saved to some extent. The invention further discloses an energy acquiring system, which has the beneficial effects as above.

The invention discloses a unipolar differential logic static random access memory unit and a random access memory, the random access memory unit comprises a unipolar differential logic phase inverter, the unipolar differential logic phase inverter comprises a main circuit and an auxiliary pull-up path, and cross-coupled pull-down tubes are adopted in the main circuit to form a positive feedback structure so as to reduce static power consumption; a gate control module which comprises a write switch and a read switch, and when the write switch is switched on, the unipolar differential logic static random access memory unit writes and stores data; and when the read switch is switched on, data stored in the unipolar differential logic static random access memory unit is read. The pull-down tube of the unipolar differential logic static random access memory unit adopts a cross coupling connection mode to form a positive feedback structure, so that a closed TFT (Thin Film Transistor) always exists from a power supply to the ground in a stable state, a static direct-current path is eliminated, static power consumption is reduced, and output voltage swing is improved. The invention can be widely applied to static random access memories.

The invention provides a low-voltage and high-linear cascode amplifier, which includes a Cascode amplifier, a DC bias unit, a DC separation unit and a voltage boost unit. The DC bias unit provides a stable DC operating point for the Cascode amplifier unit in the full temperature (-55°C to 125°C) range, avoiding the performance loss caused by the drift of the DC operating point. The DC separation unit ensures that the voltage boost unit does not affect the electrical characteristics of the Cascode amplifier unit, and ensures that the low-voltage and high-linearity cascode amplifier is in a normal working state. Through the voltage boost unit, the NMOS transistor M in the Cascode amplifier unit is improved 1b Drain with NMOS transistor M 2b The potential difference between the sources enhances the output voltage swing and maximum power output capability of the Cascode amplifier unit, thereby effectively improving the linearity of the cascode amplifier.