The invention discloses a high-
linearity stacked-structure
radio frequency power
amplifier. The high-
linearity stacked-structure
radio frequency power
amplifier comprises an input matching circuit, an output
broadband matching circuit, a bias circuit A, a bias circuit B, and a power amplification circuit at least formed by two connected and stacked
transistor drains and sources, wherein a
signal source is connected with a grid of a
transistor at the bottom of the power amplification circuit through the input matching circuit, and the bias circuit B is also connected with the grid; the bias circuit A is connected with grids of other transistors of the power amplification circuit, the grids are grounded by connecting a grid
capacitor, and sources are grounded by connecting LC series circuit; a drain of a
transistor at the top of the power amplification circuit is connected with a load through the output
broadband matching circuit. According to the circuit structure of the high-
linearity stacked-structure
radio frequency power
amplifier, the linearity and
voltage endurance capability of the radio frequency power amplifier are improved; besides, output
voltage swing, operating bandwidth, power efficiency,
power gain and maximum output power of the radio frequency power amplifier can be also improved, and a greater secondary
harmonic suppression effect is also achieved.