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Highly Integrated Transformer-Coupled RF Power Amplifier with Wide Adjustment Range

A power amplifier and transformer coupling technology, applied in the field of radio frequency front-end, can solve the problems such as difficulty in adapting to the needs of chip single-chip and high efficiency, limited range of transmission power adjustment, and difficulty in meeting the needs, so as to reduce sensitivity, increase transmission power, The effect of increasing the output voltage swing

Active Publication Date: 2018-10-19
SOUTH CHINA UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These features are difficult to adapt to the current demand for chip singulation and high efficiency
[0005] In order to solve the above problems, U.S. patents US9214901 and US7889009, as well as the journal "Fully Integrated CMOS Power Amplifier With Efficiency Enhancement at Power Back-Off" all use an equal-section series topology transformer structure for energy coupling, but the transmission power adjustment range achieved by it is limited , it is difficult to meet the growing demand

Method used

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  • Highly Integrated Transformer-Coupled RF Power Amplifier with Wide Adjustment Range
  • Highly Integrated Transformer-Coupled RF Power Amplifier with Wide Adjustment Range
  • Highly Integrated Transformer-Coupled RF Power Amplifier with Wide Adjustment Range

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Embodiment Construction

[0025] refer to figure 1 and figure 2 , the present invention has a wide adjustment range and a highly integrated transformer-coupled radio frequency power amplifier, including a single-slip circuit 3, a driving power amplifier circuit 5, an interstage matching network circuit 8, a power amplifier circuit array 11 and a non-equal series power coupling transformer unit 12 The differential output terminal of the single-slip circuit 3 is connected to the differential input terminal of the non-equal series power coupling transformer unit 12 through the drive power amplifier circuit 5, the interstage matching network circuit 8 and the power amplifier circuit array 11 in sequence.

[0026] Preferably, the single-slip circuit 3 is used to convert single-ended signals to differential signals within a wide frequency range, and provides differential signals to the subsequent drive power amplifier circuit; the drive power amplifier circuit 5 is used to convert the differential power Th...

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Abstract

The invention discloses a transformer coupling radio frequency power amplifier with a wide adjustment range and a high integration level. The amplifier comprises a single-end to differential circuit, a driving power amplifier circuit, a stage matching network circuit, a power amplifier circuit array and a non-equant serial power coupling transformer unit, wherein the differential output end of the single-end to differential circuit is connected with the differential input end of the non-equant serial power coupling transformer unit via the driving power amplifier circuit, the stage matching network circuit and the power amplifier circuit array in sequence. The transformer coupling radio frequency power amplifier adopts the working mode of adjusting the power amplifier circuit array, thus achieving the wide adjustment range of the transmitting power while ensuring high efficiency of the system, and has the characteristics of wide working frequency band, simple matching circuit and high integration level. The transformer coupling radio frequency power amplifier can be widely applied to the field of radio-frequency technologies.

Description

technical field [0001] The invention relates to the technical field of radio frequency front ends of intelligent mobile terminals, in particular to a transformer-coupled radio frequency power amplifier with a wide adjustment range and high integration. Background technique [0002] The rapid development of the field of intelligent mobile terminals has promoted the evolution of RF front-end integrated circuits in the direction of low cost, high integration, high speed and high compatibility. [0003] The RF front-end industry needs new technologies and architectures to meet the applications of high linearity, high efficiency and high power density. Realizing the full integration of the RF front-end of the silicon-based process is very beneficial to promoting product miniaturization, improving compatibility, and reducing costs. As the most important part of the RF front-end chip, the power amplifier is responsible for amplifying the power signal of the last stage, and its are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/24H03F3/195H03F3/21H03F3/60H03F1/02
CPCH03F1/02H03F3/195H03F3/211H03F3/245H03F3/602H03F2200/09H03F2200/216H03F2200/225
Inventor 吴海岗李斌吴朝晖赵明剑
Owner SOUTH CHINA UNIV OF TECH
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