Terahertz oscillator based on negative resistance enhancement

A negative resistance enhancement, oscillator technology, applied in power oscillators, electrical components, etc., can solve the problems of device gain decline, low Q value of passive devices, etc., to achieve the effect of improved output power performance, compact area, and easy integration

Pending Publication Date: 2021-12-03
芯灵通天津科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the present invention aims to propose a terahertz oscillator based on negative resistance enhancement to solve the problems of device gain reduction and low Q value of passive devices caused by frequency close to the cut-off frequency of transistors

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  • Terahertz oscillator based on negative resistance enhancement
  • Terahertz oscillator based on negative resistance enhancement
  • Terahertz oscillator based on negative resistance enhancement

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Embodiment Construction

[0026] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0027] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and thus should not be construed as limiting the invention. In addition, the terms "first", "second", etc. are used for descriptive purposes only, and should not be understood ...

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Abstract

The invention provides a terahertz oscillator based on negative resistance enhancement, which comprises a plurality of groups of single-core oscillator circuits for outputting oscillation signals, the plurality of groups of single-core oscillator circuits are connected to the same common endpoint A, and the common endpoint A is connected with an output port through a capacitor C and is connected with a power supply voltage through a transmission line TL1; the multiple groups of single-core oscillator circuits are distributed in an annular shape, and the single-core oscillator circuits are connected through transmission lines TL2 and used for power synthesis, so that the phase noise and the output power of the oscillator are improved. According to the terahertz oscillator based on negative resistance enhancement, the transistor is adopted to replace a source electrode degeneration capacitor, stray capacitance is reduced, the oscillator can generate signals of a terahertz frequency band, meanwhile, the effect of enhancing negative resistance is achieved, and it is ensured that the oscillator can be normally started.

Description

technical field [0001] The invention belongs to the technical field of terahertz oscillators, in particular to a terahertz oscillator based on negative resistance enhancement. Background technique [0002] Terahertz waves have great application potential in the fields of basic research, astrophysics, materials, biomedicine, and modern communication technology, especially in the field of terahertz communications. The characteristics of large amount of information and good directionality make it have obvious technical advantages in the field of wireless communication. In the entire communication system, the frequency source circuit is used to generate terahertz carrier waves. It is one of the most important circuit modules in terahertz communication systems and is also a key component of terahertz systems such as radar, communication, and electronic countermeasures. [0003] There are mainly three ways to generate signals in the terahertz frequency band: one method is based o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03B5/12H03B5/06
CPCH03B5/1228H03B5/06
Inventor 宋琦马宗琳傅海鹏
Owner 芯灵通天津科技有限公司
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