51results about How to "Increased mechanical sensitivity" patented technology

An optomechanical force sensor includes a substrate, a cantilevered beam anchored to the substrate, and a probe tip positioned near an end of the cantilevered beam distal to the substrate. A suspended waveguide is disposed on the cantilevered beam and is optically continuous with an input / output waveguiding structure. An optical cavity is defined within the suspended waveguide.

The invention relates to an optical fiber sensing probe and a preparation method. The optical fiber sensing probe comprises a glass body, wherein a groove is formed in one side of the glass body; a boron-silicon sensitive thin film is arranged at a groove opening of the groove; a reflecting film is arranged between the boron-silicon sensitive thin film and the glass body; the boron-silicon sensitive thin film and the reflecting film are integrally molded; the groove is sealed by the reflecting film; a vacuum cavity is formed in the glass body. Compared with the prior art, the optical fiber sensing probe has the advantages of high mechanical sensitivity, high reflecting rate, high temperature resistance and small temperature effect and is suitable for pressure measurement under different temperature environments; large-scale and integrated production can be realized, so that the production efficiency of sensor chips is improved and the cost is reduced.

The invention discloses an energy capturing and energy storing integrated micro-nano battery based on a multilayer structure. The battery mainly comprises an upper energy capturing structure and a lower energy storing structure. The energy capturing structure is formed by repeatedly folding two long strip shape electrodes; one long strip shape electrode is a bottom electrode and has a copper / industrialized liquid crystal polymer / copper three layer composite structure; and the other flexible electrode is a counter electrode and has an electret / copper / industrialized liquid crystal polymer / copper / electret five layer composite structure. The work principle is electrostatic induction: charges are implanted into an electret polymer film in advance to generate a bias voltage, when external vibration causes two electrodes to move relative to each other, due to the capacitance change, charges of two electrodes are recombined, the external mechanical energy is converted into electrical energy,and at the same time, through a two dimensional planar energy storing structure formed on a flexible substrate, in-situ energy storage is realized. The battery has the characteristics of good output performance, simple structure, small volume, light weight, durability, and flexibility.

The invention provides an MEMS gyro automatic modal matching control device based on a negative stiffness effect, and adopts external calibrating signal input, so as to obtain a required modal matching control quantity. The external calibration signal is formed by superposition of two groups of sinusoidal signals a and b with different frequencies, the frequency of one group is higher than the center frequency of a driving mode, the frequency of the other group is lower than the center frequency of the driving mode, frequency difference between the frequencies of the two groups and the center frequency of the driving mode is equal, thus automatic modal matching is realized, and no extra reference quantity is needed. The device suppresses signal coupling and interference in a modal matching process. Two paths of calibrating signals having the same frequency difference with a driving signal are used, a reference signal of a PI controller is set to be 0, and open-loop search for a reference point is not needed. In the device, the calibrating signals are loaded on a detection mechanism in the form of force feedback, the detection mechanism is put in a feedback loop, detection of the amplitude-frequency characteristic of a mode is brought into full play, and output amplitude of the calibrating signal passing the detection mechanism is relatively large.

A three-layer self-healing flexible strain sensor includes: a self-healing sensitive layer, wherein a self-healing encapsulating layer is respectively placed on an upper surface and a lower surface of the self-healing sensitive layer. The self-healing sensitive layer comprises a doped carbon material or a conductive composite. The three self-healing layers of the self-healing strain sensor can quickly repair the internal and external damage caused by the layered structure in a short period of time after the external damage, and does not require external stimulation. The three-layer self-healing structure strain sensor is simple in preparation without using a repair agent, which can achieve rapid self-repair at the room temperature, and can be repeatedly repair. The three-layer self-healing structure increases the strength and modulus of the strain sensor as well as increases the ability of the strain sensor to resist external damage.

The invention discloses a metal mesh transparent electrode with a modified PEDOT:PSS protective layer and a preparation method thereof and belongs to the technical field of metal mesh transparent electrodes. The preparation method comprises neutralizing a PEDOT:PSS aqueous solution with a pH of 7.0-7.5 through a strongly basic solution containing NH2+ and NH3+ groups to a pH of 7.0-7.5; doping thePEDOT:PSS aqueous solution with the pH of 7.0-7.5 to obtain a modified PEDOT:PSS aqueous solution, then applying the modified PEDOT:PSS aqueous solution onto a metal mesh transparent electrode, and performing drying treatment to form a uniform modified PEDOT:PSS film on the metal mesh transparent electrode as the protective layer. By adding the modified PEDOT:PSS protective layer onto the metal mesh transparent electrode, the long-term application stability of the metal mesh transparent electrode can be enhanced. The preparation method of the metal mesh transparent electrode with the modifiedPEDOT:PSS protective layer is applied to processing metal mesh transparent electrodes.

The invention relates to a micromechanical gyroscope, in particular to a micromechanical gyroscope bandwidth expanding method based on a dipole compensation method. The method solves the problem that when the micromechanical gyroscope is used, consideration can not be given to the mechanical sensitivity and the bandwidth. The micromechanical gyroscope bandwidth expanding method based on the dipole compensation method comprises the following implementation steps that 1, resonance angular frequency of a drive mode and a detection mode of the micromechanical gyroscope is determined in a frequency scanning mode; 2, according to the result of a frequency scanning test of the drive mode and the detection mode of the micromechanical gyroscope, quality factors of the drive mode and the detection mode of the micromechanical gyroscope are calculated; 3, a dipole compensating controller is additionally arranged in a detection loop of the micromechanical gyroscope; the dipole compensating controller comprises a zero pole generating link and a proportional link. The method is suitable for the micromechanical gyroscope.

A fiber optic F-P sound pressure sensor based on metal film belongs to the technical field of the sound pressure sensor. The sound pressure sensor comprises a metal corrugated film, a cavity casing, a ferrule and an optical fiber. The metal corrugated film is used as a sound pressure sensitive element, and is bonded with one end face of the cavity sleeve with a cured adhesive, and a ferrule with the inner wall of the cavity casing is inserted from the other end face of the cavity sleeve, and the center of the ferrule is inserted with an end-polished fiber. The cavity sleeve, the ferrule and the fiber set co-axially, and a cure adhesive is used to fix the cavity sleeve and the ferrule, and the cure adhesive is also used to fix the ferrule and the fiber. The fiber optic F-P sound pressure sensor based on metal film is capable of solving the technical problems caused by the diaphragm material or the diaphragm shape.

The present invention discloses an obliquity rod suspension type gravity gradient former. The former comprises a probe, an upper quality inspection, an upper obliquity rod, a cross bar, a lower obliquity rod, a reed, a rotary table, a capacitive displacement sensing module, an electrostatic feedback module and an analog-digital conversion circuit. The reed is in rigid connection with the middle portion of the cross bar, one end of the upper obliquity rod is in rigid connection with one end of the cross bar, one end of the lower obliquity rod is in rigid connection with the other end of the cross bar; the other end of the upper obliquity rod, is connected with the upper quality inspection; the other end of the lower obliquity rod, is connected with the upper quality inspection in the probe; and the upper obliquity rod and the lower obliquity rod are arranged in parallel, and the control end of the probe is connected with the output end of the electrostatic feedback module. The obliquity rod suspension type gravity gradient former only needs an apparatus to complete the measurement of the gravity gradient changing, the entirety of obliquity rod is a central symmetry structure and is insensitive for the ground vibration, the two sides, opposite to the polar plate, of the upper obliquity rod, the lower obliquity rod and the upper quality inspection, the two sides corresponding to the upper quality inspection, the left polar plate and the right polar plate are mutually parallel so as to improve the machinery sensitivity; and through changing of the angle of the obliquity rods and the cross bar the obliquity rod suspension type gravity gradient former can measure the diagonal tensor and the full tensor of the gravity gradient.

The invention relates to a silicon-based micro-machined vibratory gyroscope with an I-shaped structure, which is a measuring instrument used for measuring the angular rate perpendicular to a base, and comprises a top monocrystalline silicon, a middle monocrystalline silicon, and a bottom monocrystalline silicon; the top monocrystalline silicon being arranged with signal input and output lines is the silicon micro gyroscope packaged cover plate; the middle monocrystalline silicon is where the gyroscope mechanical structures are fabricated; the bottom monocrystalline silicon is a gyroscope substrate with fixed pedestals; the middle monocrystalline silicon layer is sealed in a closed cavity formed by top and bottom monocrystalline silicon layers. The invented gyroscope has properties of small error, high mechanical sensitivity, low vibration sensitivity, and low temperature sensitivity, and can implement motion decoupling of a driving mode and a detection mode, large amplitude vibration, and detection output decoupling.

The invention provides an MEMS diaphragm and an MEMS sensor chip. The MEMS diaphragm comprises a sensing part and a peripheral part surrounding the periphery of the sensing part. A plurality of outergrooves and a plurality of inner grooves are formed between the peripheral part and the sensing part; the plurality of outer grooves are annularly distributed at the inner edge of the peripheral part;a first connecting arm is formed between every two adjacent outer grooves, the multiple inner grooves are annularly distributed in the outer edge of the sensing part, a second connecting arm is formed between every two adjacent inner grooves, and at least one of the first connecting arms and the second connecting arms is provided with a reinforcing rib structure.

The invention discloses a vibrating beam, a manufacturing method of the vibrating beam, and a silicon micro gyroscope. The vibrating beam is characterized in comprising a beam body, wherein one side of the beam body is provided with a groove in a depth direction, and the groove has two sides and is disposed along the length of the beam body. The vibrating beam, the manufacturing method of the vibrating beam, and the silicon micro gyroscope provided by the invention solve the problems in the prior art that the machining error is greatly affected, the machining process is difficult to control and the machining accuracy is difficult to ensure, facilitate machining control while realizing the flexible design of the spindle azimuth angle, and have the advantages of high tolerance capability, high machining quality and good robustness.

The invention discloses a comb tooth capacitive micro-electromechanical accelerometer structure. The structure comprises comb tooth groups, a mass block, flexible beams, flexible beam support rods andcomb tooth support rods, wherein the mass block is a frame structure shaped like a Chinese character Ri; the comb tooth groups are variable-gap comb tooth groups; each comb tooth for forming the combtooth groups is a pentagonal comb tooth with a gradually varied comb tooth width at the overlapped area; the comb tooth groups are crossly distributed in the inner and outer sides of the mass block frame to form a differential capacitor; the movable comb teeth of the comb tooth groups are connected with the mass block and are suspended at two ends of the flexible beam support rods on the two outermost sides of the structure through four flexible beams at four corners of the mass block frame; and the fixed comb teeth of the comb tooth groups are connected with the comb tooth support rods. Thepentagonal comb teeth is capable of increasing the tooth pair number while keeping the tooth clearance ratio, so that benefit is brought to improve the sensitivity of the accelerometer. The crossly distributed comb tooth groups are capable of making up the capacitive differences caused by nonuniform etching process so as to improve the capacitive symmetry, and is also capable of compensating the influences, on the differential capacitor, caused by environment temperature change so as to improve the stability of a calibration factor of the accelerometer.

A MEMS microphone includes a substrate (100), a supporting part (200), an upper polar plate (300) and a lower polar plate (400). The substrate (100) is provided with an opening (120) penetrating the middle thereof; the lower polar plate (400) straddles the opening (120); the supporting part (200) is fixed on the lower polar plate (400); the upper polar plate (300) is affixed to the supporting part (200); an accommodating cavity (500) is formed among the supporting part (200), the upper polar plate (300) and the lower polar plate (400); a recess (600) opposite to the accommodating cavity (500) is arranged in an intermediate region of at least one of the upper polar plate (300) and the lower polar plate (400), and insulation is achieved between the upper polar plate (300) and a lower polar plate (400).

The invention provides a silicon micromachined resonant accelerometer. One end of each force arm of a micro-mechanical lever mechanism, which is far away from a corresponding anchoring body, is fixedon a mass block; the moving components of resonators are connected with the force arms and are driven to move by the force arms; the resonators are symmetrically arranged with respect to the middle line of the mass block; the displacement directions of the moving components of the two resonators which are symmetrical to each other after the moving components bear forces are opposite to each other;the resonators are symmetrically arranged with respect to the center line of the mass block, so that the resonant frequencies of the operating modes of the two resonators are equal; the two resonators are distributed at two ends of the mass block, so that the mutual interference of resonant structures can be greatly reduced, and the noise level of the accelerometer can be decreased; since the resonators are located at the two ends of the mass block, the asymmetric vibration of the resonant structures which is caused by the asymmetry of the machining of the mass block can be greatly reduced; and therefore, drift caused by process error, temperature change and environmental vibration can be greatly reduced, and the interference of environmental factors can be effectively suppressed from thestructure of the accelerometer, and the sensitivity of the accelerometer can be effectively improved.

The invention discloses a harmonic oscillator structure of a laser gyroscope. The harmonic oscillator structure comprises a center body, a resonant ring, spokes, vibration transmission beams and vibration transmission sheets, wherein a center hole is formed in the center of the center body; the resonant ring sleeves the center body; the outer wall of the center body is connected with the inner wall of the resonant ring through a plurality of the spokes; the spokes are annularly and symmetrically distributed around the center hole; a piezoelectric element is bonded to at least one side of eachof the spokes; the center body is further connected with the vibration transmission sheets through the vibration transmission beams; and the outer walls of the vibration transmission sheets are matched with the inner walls of containing holes formed in an optical cavity of the laser gyroscope. The harmonic oscillator structure has the remarkable effects that the structure is simple, the manufacturing is simple, the mechanical sensitivity is higher than that of a traditional structure, the lock area of the optical laser gyroscope is well reduced or even eliminated, and the performance and the precision of a laser gyroscope product are effectively improved.

The invention discloses a semiconductor device, which is prepared on a substrate and comprises a diaphragm structure, a back plate structure and a back cavity. The diaphragm structure is characterizedin that the diaphragm structure comprises an intermediate diaphragm and a peripheral diaphragm, and a slit composed of the intermediate diaphragm and the peripheral diaphragm; The intermediate diaphragm is fixed on the substrate by a plurality of discrete anchors, and the peripheral diaphragm is fixed on the substrate by a membrane ring. The elatively sealed diaphragm can improve the low frequency performance of the device. The invention also discloses a preparation method of the semiconductor device and an electronic device comprising the semiconductor device.

The invention provides an MEMS diaphragm and an MEMS sensor chip. The MEMS diaphragm comprises a sensing part and a peripheral part surrounding the periphery of the sensing part. A plurality of outergrooves and a plurality of inner grooves are formed between the peripheral part and the sensing part; the outer grooves are annularly distributed in the inner edge of the peripheral part, the tail ends of the outer grooves extend towards the inner side, the inner grooves are annularly distributed in the outer edge of the sensing part, the tail ends of the inner grooves extend towards the inner side, and the portion, corresponding to the tail ends of every two adjacent outer grooves, of each inner groove is sunken inwards to form an inwards-concave section.

The invention discloses an MEMS chip and electronic equipment. The MEMS chip comprises a substrate, a vibrating diaphragm and a back polar plate which are sequentially arranged in a stacked mode. The MEMS chip further comprises a first supporting part arranged between the substrate and the vibrating diaphragm and a second supporting part arranged between the vibrating diaphragm and the back pole plate, and the projection of the first supporting part on the vibrating diaphragm and the projection of the second supporting part on the vibrating diaphragm are arranged in a staggered mode. According to the invention, the vibrating diaphragm is supported on the substrate through the first supporting part, so that the periphery of the vibrating diaphragm and the substrate are relatively fixed; and the back pole plate is supported on the vibrating diaphragm through the second supporting part, so that the back pole plate and the vibrating diaphragm are separated to form a vibration gap, thereby facilitating vibration of the vibrating diaphragm. The first supporting part and the second supporting part are arranged at the two opposite ends of the vibrating diaphragm, and the projection of the first supporting part on the vibrating diaphragm and the projection of the second supporting part on the vibrating diaphragm are staggered, so that the stress at the anchor point of the vibrating diaphragm can be reduced, the compliance of the vibrating diaphragm can be improved, and the mechanical sensitivity of the MEMS chip can be improved.

The invention discloses an out-of-plane axial detection MEMS capacitive accelerometer with low cross-axis sensitivity, and belongs to the field of MEMS inertial devices. The accelerometer comprises astructural layer, a substrate layer and a silicon cover plate; the sensitive structure of the accelerometer comprises four sets of orthogonally distributed sensitive mass units and an unbalanced massblock. and each set of sensitive mass unit is connected with the central mass block through two connecting beams. the center of each detection mass block comprises two anchor points, and each anchor point is connected to the detection mass block through two elastic torsion beams. According to the Z-axis MEMS accelerometer with low cross-axis sensitivity, the sensitive structure with the large massblocks is adopted, common-mode interference is reduced through the multiple differential mass blocks, and low cross-axis sensitivity is achieved through the orthogonally-distributed sensitive mass units.