mems diaphragm and mems sensor chip

Abstract

The invention provides an MEMS diaphragm and an MEMS sensor chip. The MEMS diaphragm comprises a sensing part and a peripheral part surrounding the periphery of the sensing part. A plurality of outergrooves and a plurality of inner grooves are formed between the peripheral part and the sensing part; the outer grooves are annularly distributed in the inner edge of the peripheral part, the tail ends of the outer grooves extend towards the inner side, the inner grooves are annularly distributed in the outer edge of the sensing part, the tail ends of the inner grooves extend towards the inner side, and the portion, corresponding to the tail ends of every two adjacent outer grooves, of each inner groove is sunken inwards to form an inwards-concave section.

Description

technical field [0001] The invention relates to the technical field of micro-electromechanical systems (MEMS, Micro-Electro-Mechanical System), in particular to a MEMS diaphragm and a MEMS sensor chip. Background technique [0002] Micro-electromechanical sensors have been widely used in various acoustic receivers or force sensors. Their small size, low power consumption, and high sensitivity have become design goals. According to the results of theoretical simulations, the influence of residual stress on The mechanical sensitivity of the vibrating membrane in acoustic sensors has a major influence. [0003] The capacitive sensor structure included in the MEMS device is generally a sensing film and a back electrode, forming a two-parallel capacitive plate structure to sense vibration or pressure change. Among them, the material properties of the sensing film determine the sensitivity performance of the component, but the thermal residual stress generated in the semiconducto...

AI Technical Summary

Problems solved by technology

Among them, the material properties of the sensing film determine the sensitivity performance of the component, but the thermal residual stress generated in the semiconductor processing process cannot be avoided

However, the existing process technology is still unable to accurately control the film stress, and the sensitivity of the MEMS device is low or the sensitivity varies.

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