30results about How to "Increase the rate of temperature change" patented technology

The invention provides a device applied to gradient temperature control, which is composed of a first temperature control module, a second temperature control module, a control module, a transmission device or a rotating device, a controlled target and a detection module. The method and device of the present invention have scalability, different temperature control modules can be used alternately at different time points, and the temperature control module in the non-working state can use the idle time to achieve the next target temperature value without sudden changes, prolonging its Service life; the temperature control module in the working state does not have a process of heating and cooling, which increases the rate of heating and cooling of the sample module to avoid overshooting, and does not require complex control algorithms. The temperature control is more flexible, it can shorten the effective temperature control time of the controlled target, increase the temperature change rate of the controlled target, and can be applied in gradient temperature control. Using a small number of temperature control modules, using the "time-division multiplexing" idea to use different temperature control modules to control the controlled target temperature in different time periods, so as to achieve multiple target gradient temperatures.

The present invention discloses a communicating type drum water-level sampling and measuring device and physical dimension determination method of said device. It includes steam communicating pipe, water communicating pipe, measuring barrel and blowdown flushing pipe. The closed measuring barrel interior includes a metering section on which a water-level detection sensing device is mounted, and the upper portion and lower portion of said metering section are respectively communicated with steam measuring hole connecting pipe and water measuring hole connecting pipe by means of steam communicating pipe and water communicating pipe, the blowdown flushing pipe is set in the lower portion of measuring barrel, and over the measuring barrel an additional steam chamber for conveying condensate into measuring section is set.

The invention discloses a method for extremely fast nucleic acid amplification detection. The nucleic acid amplification reaction tube is repeatedly placed in an ultra-high temperature zone and an ultra-low temperature zone for a short time. A temperature point between 10°C-40°C; such 30-45 cycles, complete the nucleic acid amplification detection process within 8-15 minutes. The invention also discloses a reactor for extremely fast nucleic acid amplification, which includes an ultra-high temperature reaction zone with a fixed temperature in the adjustment range of 100°C-150°C and a fixed temperature in the adjustment range of 10°C-40°C Ultra-low temperature reaction zone. The invention also discloses an operating software system and equipment for the above-mentioned extremely fast nucleic acid amplification.

The invention provides a heat storage heating body and a preparation method thereof. The heat storage heating body includes: a heat storage brick, a cavity is arranged in the middle of the heat storage brick; a heating plate is arranged in the cavity, and the heating plate and the heat storage brick The heat storage bricks are integrally sintered. The heat storage heating element provided by the present invention includes: heat storage bricks and heating plates. The heat storage bricks are integrally sintered and have an integrated structure without too many connecting mechanisms. The structure is simple and easy to operate; further, the heat storage bricks There is a cavity inside, and the heating plate is placed in the cavity, the heating plate and the heat storage brick are closely bonded, the contact area is increased, the utilization rate of heat is ensured, and the working efficiency of the heat storage heating element is improved. In the case of heat generation, the temperature of the heating plate does not need to be too high, which is beneficial to prolong its service life.

The present invention provides a process chamber and semiconductor processing equipment. The process chamber includes a chamber body, a shielding disk library and a shielding disk communicated with the inside of the chamber body, wherein a base and a second shielding disk are arranged in the chamber body. An thimble mechanism; also includes a transmission mechanism, the transmission mechanism includes a transmission arm and a temperature control device, wherein the transmission arm can move between the chamber main body and the shielding disk library, and can support the shielding disk; the temperature control device is arranged on the transmission arm and when the transfer arm moves to the inside of the chamber main body and is located at a position opposite to the processed workpiece carried by the first ejector mechanism, it is used to control the temperature of the processed workpiece. The process chamber provided by the invention can improve the temperature control efficiency and temperature control uniformity, and will not bring adverse effects to other parts in the chamber.

The invention provides a temperature control system and an optical console having the same temperature control system. The temperature control system comprises a refrigeration unit, a temperature controller and a switching power supply. The temperature controller controls the switching power supply to drive the refrigeration unit to carry out refrigeration or heating. The refrigeration unit comprises a copper heat radiation support plate, a first refrigeration sheet, a first heat insulation pad, an annular heat spacer, a temperature control copper block, a second refrigeration sheet, a second heat insulation pad and a heat radiation block. The two refrigeration sheets and the copper heat radiation support plate are used to cooperatively buffer temperature control, the conventional technical problem that the accumulated heat is high and the refrigeration is hard is solved, the temperature changing rate is greatly improved, the testing time is saved, the usage is convenient, and the low temperature refrigeration effect is good.

The invention relates to a temperature control method for equipment on a satellite in a system level thermal vacuum test. The method mainly includes a temperature range determining method for the equipment on the satellite, a high temperature determining method for the equipment on the satellite, an infrared heating cage manufacturing method before the test, a method for modifying the on-off state and the working state of the equipment on the satellite in the test process and an active temperature control heating loop starting / stopping threshold on the satellite, and a loop controlling method. According to the method, when the infrared heating cage is used for simulation based on external heat stream, temperature control of the equipment on the satellite is reasonable and effective, the temperature changing rate of the equipment on the satellite is increased, it is guaranteed that the temperature of the equipment does not exceed the checking and accepting level temperature range, and not only is the safety of the equipment on the satellite guaranteed, but also the purpose of eliminating potential early-stage defects of the satellite is effectively achieved.

The invention discloses a solar capillary temperature gradient box, and relates to the technical field of solar heat collection. The temperature gradient box comprises a solar heat collector, a temperature control water tank, a low temperature water tank, a test box and a controller, wherein a heating coil pipe and a cooling coil pipe are arranged in the temperature control water tank. The test box comprises a heat preservation barrel body and an upper cover, wherein an annular wall type capillary heat exchanger and a metal inner barrel are coaxially arranged in the heat preservation barrel body from outside to inside, the annular wall type capillary heat exchanger comprises an upper ring tube, a lower ring tube and a capillary tube used for communicating the upper ring tube and the lowerring tube, and a water outlet tube and a water inlet tube are respectively arranged on the upper ring tube and the lower ring tube. The solar heat collector is connected with the heating coil pipe toform a first circulation loop; and the low temperature water tank and the cooling coil pipe form a fourth circulation loop, and the temperature control water tank is connected with the annular wall type capillary heat exchanger to form a third circulation loop. The annular wall type capillary heat exchanger is used for heat exchange, the solar capillary temperature gradient box has the characteristics of a large heat exchange area and a small heat exchange temperature difference, and the rapid temperature change and uniform temperature distribution in the box can be realized.

The invention discloses a semiconductor epitaxial wafer substrate-bearing disk, a supporting device thereof and a metal organic chemical vapor deposition (MOCAD) reaction chamber. A substrate-bearing cavity which is used for bearing a substrate is arranged on the upper surface of the substrate-bearing disk of a semiconductor epitaxial wafer; an annular structure which is coupled with the upper end face of a supporting shaft is arranged at a position of the lower surface of the substrate-bearing disk, which is close to the outer surface of the substrate-bearing disk; the supporting device comprises the supporting shaft which is connected with the substrate-bearing disk in a coupling mode and the supporting shaft is a hollow shaft; the MOCAD reaction chamber comprises an annular reaction chamber wall, the supporting shaft which is located on the inner side of the reaction chamber wall and the substrate-bearing disk which is installed at the top end of the supporting shaft; and a spraying nozzle is arranged on the upper portion of the substrate-bearing disk. The structure of the MOCAD reaction chamber is characterized in that the substrate-bearing disk is the substrate-bearing disk of the semiconductor epitaxial wafer, the supporting shaft is the hollow shaft, a fixing shaft is arranged inside the hollow shaft, and a heater is arranged on the lower portion of the substrate-bearing disk. Accordingly, the substrate-bearing disk has a simple structure, the production process of the substrate-bearing disk is simplified, simultaneously, the thickness of the substrate-bearing disk can be thinner on the premise that the requirement for strength is met, materials are saved and the temperature change rate of the substrate-bearing disk is improved.