Dsiclosed is an SGTMOSFET device and a manufacturing method. A bottom
oxide layer and source
polycrystalline silicon of a grid structure are located at the bottom of a grid groove, the thickness of the bottom
oxide layer meets the requirement for
voltage resistance of 150V or above, the top of the grid groove is filled with a top
oxide layer completely formed through CVD deposition, a
polycrystalline silicon grid is formed in a top sub-groove formed by
etching the top oxide layer, the width of the top sub-groove meets the requirement for filling the
polycrystalline silicon grid, and when the depths of the two side faces of the top sub-groove are the same, the depths of the two side faces of the polycrystalline
silicon grid are the same. The invention further provides a manufacturing method of an SGTMOSFET device. According to the invention, under the condition of ensuring that the bottom oxide layer realizes the withstand
voltage of more than 150V, the polycrystalline
silicon grid with a left-right structure is adopted, so that the width of the polycrystalline
silicon grid can realize good and low-difficulty filling of the polycrystalline silicon grid, and the depths of the two side surfaces of the polycrystalline silicon grid can be ensured to be consistent; therefore, the increase of input
capacitance can be avoided and the reliability of the device can be improved under the condition of meeting the coverage length of a channel region.