60 results about "Electron density distribution" patented technology

A method and apparatus for producing soft x-ray laser radiation. A low pressure plasma column is created by electric discharge or by laser excitation inside a rotating containment tube. Rotation of the plasma is induced by viscous drag caused by rotation of the tube, or by magnetically driven rotation of the plasma as it is created in a plasma gun in the presence of an axial magnetic field, or both. A high power electrical discharge is then passed axially through the rotating plasma column to produce a rapidly rising axial current, resulting in z-pinch compression of the rotating plasma column, with resultant stimulated emission of soft x-ray radiation in the axial direction. A rotating containment tube used in combination with magnetically driven rotation of the plasma column results in a concave electron density profile that results in reduced wall ablation and also reduced refraction losses of the soft x-rays.

A method for encoding information that is encoded in spatial variations of the intensity of light characterized by a first wavelength in light characterized by a second wavelength, the method comprising: transmitting the first wavelength light through a photo-conducting material in which electron-hole pairs are generated by absorbing photons from the first wavelength light to generate a first density distribution of electrons homologous with the spatial variations in intensity of the first wavelength light; trapping electrons from the first electron density distributions in a trapping region to generate an electric field homologous with the density distribution in a material that modulates a characteristic of light that passes therethrough responsive to an electric field therein; transmitting a pulse of light having sufficient energy to generate electron-hole pairs in the photo-conducting material through the modulating material and thereafter through the photo-conducting layer to generate a second additional electron density homologous with the first electron density distribution; trapping electrons from the second electron density distribution in the trapping region; and transmitting the second wavelength light through the modulating material thereby modulating the second wavelength light in response to the electric field and encoding it with the information.

Object of the invention is to reduce the on resistance between source and drain of a nitride semiconductor device. Between a nitride semiconductor layer lying between source and drain regions and a nitride semiconductor layer serving as an underlying layer, formed is a material having an electron affinity greater than that of these nitride semiconductor layers and having a lattice constant greater than that of the nitride semiconductor layer serving as an underlying layer. As a result, an electron density distribution of a channel formed below a gate insulating film and that of a two-dimensional electron gas formed in a region other than the gate portion, when a gate voltage is applied, can be made closer in the depth direction, leading to reduction in on resistance.

The invention relates to a method for determining a four-dimensional ionosphere model of an electron distribution in the Earth's atmosphere, which is used to correct runtime measurements of signals emitted by satellites, for position determinations by means of signal receivers, comprising at least the following steps: a) defining at least one distribution function based on at least one function parameter which is suitable to describe a distribution of electrons over the height of the Earth's atmosphere, b) receiving data from a plurality of runtime measurements by means of a plurality of movable dual-frequency signal receivers, in order to determine parameters that are representative for a total quantity of electrons along a signal transmission path from a satellite to a dual-frequency signal receiver, c) determining location-dependent and time-dependent function parameters for the distribution function at least by means of the parameters, d) providing the function parameters determined in step c) as a four-dimensional ionosphere model.

A method of evaluating a semiconductor storage device of a floating gate type has calculating an electron density distribution of a tunnel insulating film of a memory cell by multiplying a change rate of a threshold voltage Vt of the memory cell of the semiconductor storage device with respect to the change of the logarithm of a time with ε*Cr*2k / Tox / q (where ε is the permittivity of the tunnel insulating film of the memory cell, Cr indicates a coupling ratio of the memory cell, Tox indicates the thickness of the tunnel insulating film, k indicates an attenuation rate of the existence probability when the charges are detrapped and is represented as k=(2mE / (h / 2π)2)0.5, m indicates the mass of the electron, E indicates an energy level of the trap of the tunnel insulating film, h indicates a Planck's constant, and π indicates a circumference ratio).