101 results about "Diazonaphthoquinone" patented technology

In the manufacturing method of a GOLD structured TFT having a gate electrode of double-layered structure, in which, compared to a second layer gate electrode, the first layer gate electrode is thinner in film thickness and longer in dimension of the channel direction, by controlling the density of the photo-absorbent contained in a positive type resist, which contains a photo-absorbent of diazonaphthoquinone (DNQ)-novolac resin series, the taper angle of the side wall is controlled to a desired angle range so that the angle thereof becomes smaller. Owing to this, it is possible to control the retreat amount of the resist when carrying out dry etching and the dimension of Lov area to a desired dimensional range so that the dimension thereof becomes larger.

A photosensitive resin composition comprises a base resin (e.g., novolak resins, polyvinylphenol-series polymers), a first photoactive ingredient (e.g., diazobenzoquinone derivatives, diazonaphthoquinone derivatives) and a second photoactive ingredient (e.g., mixtures with azide compounds) each having an absorption range at wavelength lambd1 or lambd2, the wavelengths thereof being different from each other. Between the first and second photoactive ingredients, at least one photoactive ingredient is substantially inert at the absorption wavelength of the other. After exposing the photosensitive resin composition to a light to form a pattern, the whole surface of the photosensitive layer is exposed to a light of the other wavelength to make the surface hardly soluble (in the case a positive pattern is formed) or readily soluble (in the case a negative pattern is formed) in a developer, and developed, thereby forming a pattern of high resolution. Utilizing an existing exposure system, there can be obtained photosensitive resin compositions (especially, resists for semiconductor production) having improved sensitivity and resolution.

Provided are a polyimide and a light-sensitive resin composition comprising the same, which are employed in the buffer coatings of semiconductors. The polyimide is a polyimide polymer represented by Formula 1. Further, provided is a light-sensitive resin composition which comprises: 1) a soluble BDA series polyimide having an i-ray transmittance of at least 70%; 2) poly(amic acid) having a percentage elongation of at least 40%; 3) a novolac resin; and 4) a diazonaphthoquinone-based light-sensitive substance, and which has a high degree of resolution, high sensitivity, outstanding film characteristics and mechanical properties which are characteristics required of the buffer coatings of semiconductors.

A photosensitive resin composition comprising 100 parts by mass of polycondensate (A) having a structure resulting from dehydration condensation between one or two or more tetracarboxylic acid dianhydride and one or two or more aromatic diamines having mutually ortho-positioned amino and phenolic hydroxyl groups and 1 to 100 parts by mass of photosensitive diazonaphthoquinone compound (B), wherein the polycondensate (A) has a weight average molecular weight of 3000 to 70,000.

A photosensitive resin composition comprises a base resin (e.g., novolak resins, polyvinylphenol-series polymers), a first photoactive ingredient (e.g., diazobenzoquinone derivatives, diazonaphthoquinone derivatives) and a second photoactive ingredient (e.g., mixtures with azide compounds) each having an absorption range at wavelength lambd1 or lambd2, the wavelengths thereof being different from each other. Between the first and second photoactive ingredients, at least one photoactive ingredient is substantially inert at the absorption wavelength of the other. After exposing the photosensitive resin composition to a light to form a pattern, the whole surface of the photosensitive layer is exposed to a light of the other wavelength to make the surface hardly soluble (in the case a positive pattern is formed) or readily soluble (in the case a negative pattern is formed) in a developer, and developed, thereby forming a pattern of high resolution. Utilizing an existing exposure system, there can be obtained photosensitive resin compositions (especially, resists for semiconductor production) having improved sensitivity and resolution.

A positive photosensitive siloxane composition containing: a polysiloxane (Ia), which is obtained by hydrolyzing and condensing the silane compound represented by RSi(OR1)3 in general formula (1) and the silane compound represented by Si(OR1)4 in general formula (2) in the presence of a basic catalyst, and a pre-baked film of which has a dissolution rate of 1,000 Å / second or less in a 5 wt % TMAH aqueous solution; a polysiloxane (Ib), which is obtained by hydrolyzing and condensing at least the silane compound represented by general formula (1) in the presence of an acid or basic catalyst, and a pre-baked film of which has a dissolution rate of 100 Å / second or more in a 2.38 wt % TMAH aqueous solution; and a diazonaphthoquinone derivative and solvent. (In the formula: R represents a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, in which any methylene may be replaced by oxygen, or represents an aryl group having 6 to 20 carbon atoms, in which any hydrogen may be replaced by fluorine; and R1 is an alkyl group having 1 to 5 carbon atoms.)

A positive-type photosensitive siloxane composition which comprises (I) two or more polysiloxanes that differ in the rate of dissolution in aqueous tetramethylammonium hydroxide (TMAH) solutions, (II) a polysiloxane that gives a film which after prebaking has a rate of dissolution in 2.38 wt-% aqueous TMAH solution of 50-1,000 Å / sec and that has a group soluble in aqueous TMAH solution, other than silanol, (III) a diazonaphthoquinone derivative, and (IV) a solvent.

A photosensitive resin composition comprising parts by mass of polycondensate (A) having a structure resulting from dehydration condensation between one or two or more tetracarboxylic acid dianhydride and one or two or more armatic diamines having mutually ortho-positioned amino and phenolic hydroxyl groups and 1 to 100 parts by mass of photosensitive diazonaphthoquinone compound (B), wherein the polycondensate (A) has a weight average molecular weight of 3000 to 70,000.

In a resist pattern forming method in which bake processing is performed at a temperature not lower than a glass transition temperature in order to obtain the desired sidewall angle, resist removable is difficult. Accordingly, in the resist pattern forming method of performing bake processing at a temperature not lower than a glass transition temperature, a process margin for resist removability cannot be ensured, so that there is the problem that it is impossible to compatibly realize both the formation of a resist pattern having the desired sidewall angle and the resist removability of the resist pattern. The invention aims to solve the problem. A resist pattern including a diazonaphthoquinone (DNQ)-novolac resin type of positive resist is formed, and the resist pattern is irradiated with light within the range of photosensitive wavelengths of a DNQ photosensitizer to perform bake processing on the resist pattern at a temperature not lower than the glass transition temperature of the resist pattern.

The invention provides a method for simulating three-dimensional light intensity distribution in thick resist ultraviolet (UV) shifting mask lithography. The method comprises the following steps of pushing forward a three-dimensional light intensity calculation model suitable for a diazonaphthoquinone (DNQ) resist UV shifting mask lithography process by utilizing the paraxial approximation technology of incident UV to treat a Fresnel-Kirchhoff diffraction integral equation based on the optical scalar diffraction theory and shifting the upper and lower limits of the Fresnel integral horizontally; comprehensively considering the reflection and refraction effects on an air / DNQ resist interface and the reflection effect on an DNQ resist / substrate interface in the UV propagation process as well as the UV absorption factors of DNQ resist to highly accurately simulate three-dimensional light intensity distribution in the DNQ resist UV shifting mask lithography process; in the three-dimensional light intensity calculation model of UV in photoresist, embedding the position function of shifting of a mask plate with time into the light intensity distribution function to obtain light intensity distribution changing with time and exposure doses in different positions of photoresist in the whole exposure process. The problem that three-dimensional light intensity distribution in the DNQ resist UV shifting mask lithography process can not be simulated by the traditional light intensity distribution simulation methods based on the scalar diffraction theory is solved.

The invention discloses a positive photosensitive polyimide containing a silicon-amine chain structure and a preparation method thereof, which pertains to the technical field of material and relates to a high polymer material with high heat resistance and a sensitization function. The positive photosensitive polyimide containing the silicon-amine chain structure is an organic fiber-shaped polymer material of which the main material is composed of polyamic acid with lateral chains of different polymerization degrees containing photosensitive groups. tetracarboxylic dianhydride and diamine are taken as raw materials, dissolved with an organic solvent, and reacts at room temperature with stirring; reagent is filtered, washed and dried to obtain the polyamic acid; the polyamic acid and chlorosilane amido diazonaphthoquinone are dissolved in an organic solvent and reacts at room temperature with stirring, reagent is filtered, washed and dried to obtain the positive photosensitive polyimide containing the silicon-amine chain structure. The positive photosensitive polyimide containing a silicon-amine chain structure has strong adhesion, good film forming ability, and high resolution ratio and heat resistance. The positive photosensitive polyimide can be used in photolithographic processes of optical devices, optoelectronic devices, microelectronic devices and other devices.

The present invention provides polyimide applied to the buffer coating of semiconductors and a photosensitive resin composition including the same. The polyimide is a polyimide polymer represented by Chemical Formula 1 below. Further, the present invention provides a photosensitive resin composition, including 1) BDA-series soluble polyimide having an i-ray permeability of 70% or more; 2) a polyamic acid having elongation of 40% or more; 3) a novolak resin, and 4) diazonaphthoquinone-series photosensitive substance and having a high resolution, high sensitivity, an excellent film characteristic, and mechanical physical properties which are the requirements of semiconductor buffer coating.

The invention discloses corrosion-resistant stable soldering flux. Raw materials of the corrosion-resistant stable soldering flux comprise, by weight, 25-35 parts of modified rosin, 10-15 parts of phytic acid, 3-8 parts of lactic acid, 2-5 parts of citric acid, 2-4 parts of itaconic acid, 1-2 parts of triethylamine, 10-15 parts of polyethylene glycol, 1-2 parts of rosin amine, 0.5-1 part of O-diazonaphthoquinone-5-sulfonyl rosin amine, 0.8-1.2 parts of aniline hydrochloride, 0.5-1.5 parts of octaphenyl polyoxyethyiene, 0.8-1.5 parts of sodium dodecyl sulfonate, 0.2-0.5 part of aluminum chloride, 0.5-1 part of catechol and 200-300 parts of a solvent. The corrosion-resistant stable soldering flux has good welding aiding activity, and effectively prevents oxygen and the like from entering themetal surface, and therefore the corrosion resistant performance and the stability of the soldering flux are improved.

A positive-acting photosensitive composition containing: (A) a silanol-group-containing polysiloxane compound having a structure obtained by subjecting a compound represented by formula (1) and a compound represented by formula (2) to hydrolysis and a condensation reaction; (B) a compound having at least two epoxy-containing organic groups; (C) a diazonaphthoquinone; and (D) an organic solvent. R1 represents a C1-4 alkyl group or the like, R2 represents a C2-10 divalent hydrocarbon group, R3 represents a C2-10 divalent saturated aliphatic hydrocarbon group, and X represents a group (see description for details) represented by general formulas (3-5). Furthermore, m, n and p represent numbers in a manner such that the following are satisfied: m:n:p=1:2.1-12:1-6, and m+n+p=3-6. R4 represents a C1-4 alkyl group or the like, R5 represents a C1-4 alkyl group, and a represents 1-2.