The invention relates to a manufacturing method of a full back
electrode solar cell. According to the invention, after a damaged layer of a
silicon chip is removed and a texturing process is carried out on a right side of the
silicon chip, a
phosphorus diffusion process is carried out on the
silicon chip, and a right side filed and a back side field are formed.
Oxide films are respectively formedon the right side and the back side of the
silicon chip. And then, a part of the
oxide film and a part of the back side field at the back of the
silicon chip are removed, wherein the part of the
oxide film and the part of the back side field are at a place where an
electrode of an emitter
electrode is needed to be formed; and meanwhile, another part of
oxide film and another part of back side field are kept, wherein the another part of oxide film and the another part of back side field are at a place where a base electrode is needed to be formed. At last, by using the kept oxide film as a
mask, a
diffusion process is carried out on the back side of the
silicon chip, wherein the processed area is where the oxide film and the back side field have been removed, so that the emitter electrode is formed. The full back electrode
solar cell, which is produced by the method provided in the invention, has advantages of simple technology and
high cell efficiency; besides, the
assembly of the
solar cell is easy to be welded. In addition, because the technology employed by the invention does not require especially-
designed equipment, the cost is low, and produced production has good homogenization. Therefore, the manufacturing method of the full back electrode solar
cell is suitable for large-scale industrialization production and application.