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58 results about "Carbon plasma" patented technology

Method of surface pretreatment before selective epitaxial growth

A method of surface pretreatment before selective epitaxial growth is provided. A semiconductor substrate having metal-oxide-semiconductor devices formed thereon is provided, and a lightly dry etching process with a carbon-free plasma source is performed to remove a portion of the semiconductor substrate. Then, a selective epitaxial growth process is performed to form a semiconductor layer on the semiconductor substrate. A clean surface for selective epitaxial growth is provided by the lightly dry etching process, which can resolve the undercut issue and surface roughness.
Owner:UNITED MICROELECTRONICS CORP

Cathode-arc source of metal/carbon plasma with filtration

The a cathode-arc source of metal plasma with filtration, used, in particular, for deposition of DLC, utilizes the effect of fast ions reflection from the Hall stratum in a transversal arched magnetic field to filtrate vacuum arc plasma arc from contaminating macroparticles and vapor. Various embodiments for producing maximal plasma flux at the source outlet, in particular, a pulse source with more the one cathode units for deposition of coating inside pipes / cavities, for deposition of coating in a stationary / quasi-stationary condition are offered. The cathode is made of a consumable material and is exposed to poles of magnets on both ends of cathode for creating a transversal magnetic field of an arched configuration in a discharge gap between the cathode and the anode. The anode geometry adequate to the mechanism of the arc current passage through a transversal magnetic field is offered. To avoid longitudinal and transverse short circuits of the current layer, an installation of non-conducting surfaces at ends or sectioned shields under a floating potential at the cathode sides is provided. The method of creating the Hall stratum in said transversal magnetic field of arched configuration is offered.
Owner:BENDER EFIM

Diamond-like film preparation method

The invention discloses a method for preparing diamond-like carbon film (DLC), belonging to the metal or non-metal surface modification treatment technical field. The method adopts pulsed arc discharge by using graphite as a cathode electrode and a physically and chemically combined vapor deposition method for the decomposition and ionization of hydrocarbons gas to produce DLC deposition on a surface of a workpiece. The invention comprises the main operation steps of ultrasonic cleaning, vacuumizing, ion cleaning and DLC deposition, wherein argon gas is passed through in the ion cleaning step; a pulse frequency of the arc discharge in the DLC deposition step is 5 and 35Hz with voltage of between 200 and 400V; methane, ethane or propane are preferred as the hydrocarbons gas. A high-speed and high-energy carbon plasma ion beam is formed to generate collide decomposition and ionization to the passed through hydrocarbons gas through specific pulsed arc discharge to increase increasing density of the carbon ion and diffraction performance, thereby improving deposition speed and adhesive force of DLC, reducing internal stress, and improving precision and performance of DLC.
Owner:庄严

Method for mfg. diamondoid composite diaphragm of loudspeaker

The vacuum-cathode arc source is adopted in the invention and the graphite is as the target cathode. Using the carbon plasma generated by the vacuum-cathode graphite arc deposits the diamond-like film on the diaphragm to be coated. The ivnention can produce in batch size of the compound speaker diaphragm coated with diamond like film in various shape specifications with good performances. The invention raises the frequency response characteristics of the speakers and improves the sound quality.
Owner:GUANGZHOU RES INST OF NON FERROUS METALS

Method for forming a junction region of a semiconductor device

A method for forming a junction region of a semiconductor device is disclosed. The steps of the method include providing a semiconductor substrate. A gate structure is formed on the semiconductor substrate. A dopant is implanted into the semiconductor substrate to form the junction region. An insulator layer is formed on the gate structure and the semiconductor substrate. A carbon-containing plasma treatment is performed to the insulator layer. A spacer is formed on a side-wall of the gate structure and the dopant is implanted into the semiconductor substrate to form a source / drain region next to the junction region. A heat treatment is performed to the semiconductor substrate.
Owner:UNITED MICROELECTRONICS CORP

Hybrid coating structure and method for making the same

A hybrid coating structure (500) includes a substrate (510) and a hybrid coating (100). The hybrid coating further includes a number of diamond-like carbon grains (110), each grains containing a number of superhard nano-particles (120) incorporated therein; and a number of corrosion-resistant nano-particles (130). The superhard nano-particles are comprised of a material selected from the group consisting of silicon carbide, titanium carbide, and titanium nitride. The corrosion-resistant nano-particles are comprised of a material selected from the group consisting of chrome and chrome nitride. A method for making a hybrid coating structure includes steps of: providing a substrate; producing carbon plasma, superhard particle plasma and corrosion-resistant particle plasma by a sputtering method; and depositing a hybrid coating.
Owner:HON HAI PRECISION IND CO LTD

Method for forming a superhard amorphous carbon coating in vacuum

A method for forming a superhard amorphous carbon coating in vacuum, comprising the steps of: placing an article in a vacuum chamber, evacuating the chamber, treating a surface for the article with accelerated ions; applying, on the treated surface, a layer of a material that provides adhesion for subsequent layers, initiating pulsed electric-arc discharge on a graphite cathode, and obtaining a pulsed carbon plasma stream from a plurality of cathode spots that move along the cathode surface. After that, the carbon plasma is condensed in a predetermined area on the article surface to produce a superhard amorphous carbon coating, the article temperature being maintained within the range of 200 to 450 K through controlling a repetition frequency of the electric-arc discharge pulses. According to the invention, the carbon plasma pulsed stream has average ion energy of 25-35 eV and ion concentration of 1012, 1013 cm−3; axis of the carbon plasma stream being set at angle of 15-45° to a predetermined surface of an article. During application of the coating, the article temperature change Δt is maintained within the range of 50-100 K.
Owner:ARGOR ALJBA

Method for passivating cavity surface of semiconductor laser and semiconductor laser

ActiveCN109066287AImprove reliabilityImprove the level of resistance to optical catastropheLaser detailsLaser optical resonator constructionNitrogen plasmaIon bombardment
The invention provides a passivation method of a semiconductor laser cavity surface and a semiconductor laser, belonging to the field of semiconductor lasers. By bombarding and injecting nitrogen plasma into the front and back cavity surfaces of semiconductor lasers, the hanging bonds on the cavity surface can be fully bonded to N atoms, which can not only passivate N atoms, but also cause the formation of Ga-N bond is more stable; By bombarding and implanting the front and back cavity surfaces with carbon plasma, C atoms are fully combined with the new broken bonds produced by nitrogen ion bombardment, which compensates the surface damage of the cavity surface and ensures the saturation and stability of the hanging bonds of the cleavage cavity surface. Therefore, the invention not only simplifies the process steps of cavity surface passivation, reduces the process flow time, reduces the production cost, but also improves the anti-optical catastrophe level of the semiconductor laser and the reliability of stable output under the condition of high optical power density, and realizes the purpose of high power and long service life of the semiconductor laser.
Owner:SHANXI FEIHONG LASER TECH +1

Manufacturing method for a head slider coated with dlc

A manufacturing method for a head slider coated with Diamond-like Carbon (DLC) includes: providing a substrate that is to be finally made into a head slider; depositing a DLC layer on a surface of the substrate, with carbon plasma source being sputtered in a direction that is vertical to the surface of the substrate; and doping a fluorine-doping (F-doping) layer on the DLC layer. Whereby the head slider has good film adhesion performance, higher hardness, better wear resistance, lower surface energy to obtain good hydrophobicity and oleophobicity, and lower fly height in HDD.
Owner:SAE MAGNETICS (HK) LTD

Antibacterial and biocompatible bone implantation material and preparation method and application thereof

ActiveCN109999224ARaise the surface potentialImprove bindingTissue regenerationCoatingsAntibiosisNitrogen plasma
The invention discloses an antibacterial and biocompatible bone implantation material and a preparation method and application thereof. The antibacterial and biocompatible bone implantation material comprises a bone implantation material body and a composite antibacterial layer formed on the surface of the bone implantation material body; the composite antibacterial layer is obtained by injectinga carbon-containing plasma or a silicon-containing plasma into a surface layer of the bone implantation material body to obtain a transition layer and then injecting a nitrogen-containing plasma or aphosphorus-containing plasma into the transition layer; the carbon-containing plasma, the silicon-containing plasma, the nitrogen-containing plasma and the phosphorus-containing plasma all do not contain hydrogen and oxygen; the relative surface potential of the antibacterial and biocompatible bone implantation material is 0.01-0.5 V. The antibacterial and biocompatible bone implantation materialand the preparation method and application thereof have the advantages that a plasma injection technology is adopted to construct the high potential surface, and the antibiosis and biosecurity are given to the surface of the bone implantation material.
Owner:TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI

Method for growing metal carbide on metal surface

The invention belongs to the preparation technology for growing metal carbide on metal surfaces and relates to a method for growing metal carbide on a metal surface. The method includes the preparation steps that firstly, tungsten, zirconium or a tungsten-zirconium alloy is sputtered onto the metal base body surface in a magnetron sputtering manner, and a compact thin film layer is formed; secondly, a metal base body is heated to 100-500 DEG C, and cooling is performed till room temperature is achieved after heat preserving is performed for 0.5-1 h; thirdly, carbon plasma is made to react witha thin film layer of the metal base body to generate tungsten carbide and / or zirconium carbide through a plasma chemical vapor deposition system. According to the method, a zirconium carbide or tungsten carbide or zirconium carbide and tungsten carbide composite layer can grow on the surface of a metal bar, plate or foil with the melting point larger than 500 DEG C, and the mechanical propertiesof the surface of the metal bar, plate or foil are improved and include strength, abrasion resistance, toughness and impacting strength.
Owner:AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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