Method for passivating cavity surface of semiconductor laser and semiconductor laser

Abstract

The invention provides a passivation method of a semiconductor laser cavity surface and a semiconductor laser, belonging to the field of semiconductor lasers. By bombarding and injecting nitrogen plasma into the front and back cavity surfaces of semiconductor lasers, the hanging bonds on the cavity surface can be fully bonded to N atoms, which can not only passivate N atoms, but also cause the formation of Ga-N bond is more stable; By bombarding and implanting the front and back cavity surfaces with carbon plasma, C atoms are fully combined with the new broken bonds produced by nitrogen ion bombardment, which compensates the surface damage of the cavity surface and ensures the saturation and stability of the hanging bonds of the cleavage cavity surface. Therefore, the invention not only simplifies the process steps of cavity surface passivation, reduces the process flow time, reduces the production cost, but also improves the anti-optical catastrophe level of the semiconductor laser and the reliability of stable output under the condition of high optical power density, and realizes the purpose of high power and long service life of the semiconductor laser.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a passivation method for a cavity surface of a semiconductor laser and a semiconductor laser. Background technique [0002] Semiconductor lasers have the characteristics of high near-infrared repetition frequency and high peak power, and also have the advantages of small size, low energy consumption and long life. Therefore, they are widely used in many fields. However, in the process of cleaving the bar and installing the coating, the cleavage surface of the semiconductor laser is a non-polar surface, which is composed of a cation and an anion, that is, the chemical bond of the nearest neighbor in the compound semiconductor is anisotropic, not Like a covalent bond that shares a pair of electrons, it is more like an ionic bond, and the atom with more electrons is negative. Therefore, the III-V compounds are cleaved along the cleavage plane, and a small amount of che...

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Problems solved by technology

At the same time, high-energy ions will cause certain damage to the cavity surface, seriously affecting the output power and life of the semiconductor laser.

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