Method for passivating cavity surface of semiconductor laser and semiconductor laser

A technology of lasers and semiconductors, applied in semiconductor lasers, lasers, laser components, etc., can solve the problems of cavity surface damage, affecting the output power and life of semiconductor lasers, etc., to improve reliability, solve bonding and passivation effects, and improve The effect of the reliability of the stable output

Active Publication Date: 2018-12-21
SHANXI FEIHONG LASER TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, high-energy ions will cause certain damage to the cavity surface, seriously affecting the output power and life of the semiconductor laser.

Method used

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  • Method for passivating cavity surface of semiconductor laser and semiconductor laser
  • Method for passivating cavity surface of semiconductor laser and semiconductor laser
  • Method for passivating cavity surface of semiconductor laser and semiconductor laser

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Embodiment Construction

[0026] The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0027] In order to make the objectives, technical solutions and advantages of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0028] like figure 1 As shown, the passivation method for the cavity surface of the semiconductor laser provided by the embodiment of the present invention includes the following steps S1 to S8:

[0029] S1, the epitaxial wafer of the semiconductor laser is cleaved into bars in the air, loaded into a coating fixture, and then placed in a magnetron sputtering vacuum chamber.

[0030] S2, the hydrogen source in the magnetron sputtering vacuum chamber is turned on, and hydrogen plasma is generated by sputtering hydrogen with a radio frequency power of 100-150W, and the front cavity sur...

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Abstract

The invention provides a passivation method of a semiconductor laser cavity surface and a semiconductor laser, belonging to the field of semiconductor lasers. By bombarding and injecting nitrogen plasma into the front and back cavity surfaces of semiconductor lasers, the hanging bonds on the cavity surface can be fully bonded to N atoms, which can not only passivate N atoms, but also cause the formation of Ga-N bond is more stable; By bombarding and implanting the front and back cavity surfaces with carbon plasma, C atoms are fully combined with the new broken bonds produced by nitrogen ion bombardment, which compensates the surface damage of the cavity surface and ensures the saturation and stability of the hanging bonds of the cleavage cavity surface. Therefore, the invention not only simplifies the process steps of cavity surface passivation, reduces the process flow time, reduces the production cost, but also improves the anti-optical catastrophe level of the semiconductor laser and the reliability of stable output under the condition of high optical power density, and realizes the purpose of high power and long service life of the semiconductor laser.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a passivation method for a cavity surface of a semiconductor laser and a semiconductor laser. Background technique [0002] Semiconductor lasers have the characteristics of high near-infrared repetition frequency and high peak power, and also have the advantages of small size, low energy consumption and long life. Therefore, they are widely used in many fields. However, in the process of cleaving the bar and installing the coating, the cleavage surface of the semiconductor laser is a non-polar surface, which is composed of a cation and an anion, that is, the chemical bond of the nearest neighbor in the compound semiconductor is anisotropic, not Like a covalent bond that shares a pair of electrons, it is more like an ionic bond, and the atom with more electrons is negative. Therefore, the III-V compounds are cleaved along the cleavage plane, and a small amount of che...

Claims

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Application Information

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IPC IPC(8): H01S5/028H01S5/10
CPCH01S5/0282H01S5/10
Inventor 董海亮米洪龙许并社梁建贾志刚关永莉王琳张乔
Owner SHANXI FEIHONG LASER TECH
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