The invention relates to a
boron-carbon-
nitrogen film encapsulating highly-oriented
boron nitride nanocrystal and a preparation method of the
boron-carbon-
nitrogen film, and belongs to the technical field of film materials and preparation thereof. The boron-carbon-
nitride film is of an amorphous structure containing
boron nitride nanocrystals and growing on a
silicon substrate. According to the preparation method,
boron nitride containing carbon is used as a target material, and the boron-carbon-
nitrogen film is prepared in a
deposition chamber of a
radio frequency magnetron
sputtering device,wherein the substrate temperature ranges from
room temperature to 600 DEG C, working gases comprise an
argon gas and a
nitrogen gas, flow rates are 50 sccm and 0-50 sccm respectively, and the workingpressure is 1 to 3 Pa. Ordered and controllable growth of the orientation of
boron nitride nanocrystals in a film can be realized by adjusting technological parameters, and the obtained boron-carbon-
nitride film has an optical
band gap of about 2.7 to 4.5 eV, and has good and adjustable optical properties. The preparation method provided by the invention has the advantages of simple and safe process,
mature technology, high
sputtering rate, uniform deposition film, controllable size and the like, and is suitable for industrial
mass production and promotion.