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Boron-carbon-nitrogen film encapsulating highly-oriented boron nitride nanocrystal and preparation method of boron-carbon-nitrogen film

A nanocrystalline, boron nitride technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problems of poor film stability and immaturity

Active Publication Date: 2019-01-08
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The boron carbon nitrogen thin films obtained by different preparation methods are different, most of them are amorphous structure, there is phase separation in some thin films, and the stability of thin films is not good
Previous studies mostly adjusted the content of various elements and chemical bonds in the film by controlling the target source, precursor gas and other growth parameters, but the research on the theory and practical application of film growth is still immature.

Method used

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  • Boron-carbon-nitrogen film encapsulating highly-oriented boron nitride nanocrystal and preparation method of boron-carbon-nitrogen film
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  • Boron-carbon-nitrogen film encapsulating highly-oriented boron nitride nanocrystal and preparation method of boron-carbon-nitrogen film

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Embodiment 1

[0032] The preparation of boron carbon nitrogen film under different substrate temperature of embodiment 1

[0033] (1) After the silicon (100) single wafer cut according to the required size is ultrasonically cleaned in acetone, ethanol, and deionized water, it is dried with nitrogen and sent to the vacuum deposition chamber; the vacuum degree in the deposition chamber is pumped to 3×10 -5 Pa, set the substrate temperature as room temperature, 250°C, 400°C, 500°C, 600°C.

[0034] (2) Continue vacuuming until the back vacuum of the deposition chamber reaches 3×10 -5 Pa, feed the reaction working gas argon until the working pressure is 2Pa, and the flow rate of the working gas argon is 50 sccm (no nitrogen added).

[0035] (3) The distance between the substrate and the target is 8 cm, and the negative bias of the substrate is -100V, and the sputtering power of the target is set to 150W, and then it starts to glow. After 2 minutes of pre-sputtering, the target baffle is removed...

Embodiment 2

[0040] Preparation of boron-carbon-nitrogen thin films under different nitrogen flow rates in Example 2

[0041] (1) After the silicon (100) single wafer cut according to the required size is ultrasonically cleaned in acetone, ethanol, and deionized water, it is dried with nitrogen and sent to the vacuum deposition chamber; the vacuum degree in the deposition chamber is pumped to 3×10-5 Pa, heat the substrate to 500°C.

[0042] (2) Continue vacuuming until the back vacuum of the deposition chamber reaches 3×10 -5 At Pa, the reaction working gas argon and nitrogen are introduced until the working pressure is 2Pa. The flow rate of the working gas argon is 50 sccm, and the flow rate of nitrogen is set to 0 sccm, 10 sccm, 20 sccm, 30 sccm, 40 sccm, 50 sccm respectively.

[0043] (3) The distance between the substrate and the target is 8 cm, and the negative bias of the substrate is -150V, and the sputtering power of the target is set to 150W, and then it starts to glow. After 2 m...

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Abstract

The invention relates to a boron-carbon-nitrogen film encapsulating highly-oriented boron nitride nanocrystal and a preparation method of the boron-carbon-nitrogen film, and belongs to the technical field of film materials and preparation thereof. The boron-carbon-nitride film is of an amorphous structure containing boron nitride nanocrystals and growing on a silicon substrate. According to the preparation method, boron nitride containing carbon is used as a target material, and the boron-carbon-nitrogen film is prepared in a deposition chamber of a radio frequency magnetron sputtering device,wherein the substrate temperature ranges from room temperature to 600 DEG C, working gases comprise an argon gas and a nitrogen gas, flow rates are 50 sccm and 0-50 sccm respectively, and the workingpressure is 1 to 3 Pa. Ordered and controllable growth of the orientation of boron nitride nanocrystals in a film can be realized by adjusting technological parameters, and the obtained boron-carbon-nitride film has an optical band gap of about 2.7 to 4.5 eV, and has good and adjustable optical properties. The preparation method provided by the invention has the advantages of simple and safe process, mature technology, high sputtering rate, uniform deposition film, controllable size and the like, and is suitable for industrial mass production and promotion.

Description

technical field [0001] The invention belongs to the technical field of thin film materials and preparation thereof, and specifically relates to a boron carbon nitrogen thin film enveloping oriented boron nitride nanocrystals and a method for preparing a thin film with controllable orientation of boron nitride nanocrystals. Background technique [0002] Boron carbon nitrogen materials have attracted extensive attention because of their excellent properties such as high hardness, wear resistance, low friction coefficient, low dielectric constant, thermal stability and chemical stability of carbon materials and boron nitride materials. In addition to being used as Outside the hard protective coating, the bandgap can be adjusted by adjusting its composition and chemical bond content, which is very important for its application in semiconductor devices, luminescent materials, sensors, light energy conversion materials, field effect transistors, electromagnetic storage, vacuum micr...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35
CPCC23C14/0647C23C14/0664C23C14/35
Inventor 殷红李宇婧高伟张誉元何月孙晓燕
Owner JILIN UNIV
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