38results about How to "Moderate sintering temperature" patented technology

The invention discloses a low-temperature co-fired ceramic medium material. The material consists of 1 to 16 weight percent of glass powder and 84 to 99 weight percent of Ba6-3x(Nd0.4Bi0.6)8+2xTi18O54, wherein the x is 0.5 to 1.5. The glass powder is at least one of the following two types of glass powder, namely glass powder B consisting of 30 to 50 mass percent of Li2CO3 and 5 to 20 mass percent of SiO2 and 40 to 60 mass percent of H3BO3 and glass powder C consisting of 15 to 40 mass percent of LiF and 60 to 85 mass percent of BaF2. In a preparation process, first, clinker is prepared; then, secondary preparation of the glass powder and the clinker is performed; and finally, sintering is performed. A BaO-Nd2O3-Bi2O3-TiO2 system is selected and a method of adding the glass powder as a sintering aid is adopted, so the material has the characteristics of sintering temperature below 900 DEG C, high dielectric constant and low dielectric loss, simultaneously has a wide sintering shrinkage range, and can be co-fired with a silver metallic electrode with high conductivity.

The invention relates to the field of ceramic dielectric materials, in particular to a high-dielectric X8R ceramic dielectric material and a preparation method thereof. is composed of 5‑20% by weight Sc 2 o 3 and 80‑95% by weight of K 2 Sr 4 Nb 6 o 20 consist of. High dielectric X8R ceramic dielectric material provided by the present invention, K 2 Sr 4 Nb 6 o 20 The dielectric ceramic has a moderate sintering temperature, generally around 1250°C, a high dielectric constant, adjustable capacity temperature coefficient and low loss, and is a dielectric ceramic material with excellent performance. The present invention chooses K 2 Sr 4 Nb 6 o 20 system, take the addition of Sc 2 o 3 The method of doping modification makes it meet the performance X8R standard, and at the same time has the advantages of high dielectric constant, low dielectric loss, lead-free and environmental protection.

The present invention discloses a lead-free glass frit for the dielectric layer of a plasma display, and the glass frit comprises the following raw materials according to the weight percentage: 30%-50% of Bi2O3, 5%-40% of B2O3, 5%-30% of BaO, 0.1%-10% of Al2O3, 0.1%-10% of ZnO, 0.1%-10% of MgO and0.1%-5% of La2O3. The invention has the advantages that the glass frit belongs to environment-friendly materials; various performances are excellent; the cost performance is high; the glass frit has suitably and easily adjusted thermal expansion coefficient and proper sintering temperature, and also has good chemical stability and high dielectric strength; the competitive power is very strong in lead-free performance and cost performance; and the glass frit has wide market development prospect.

The invention relates to the field of ceramic dielectric materials, in particular to a temperature-stable ceramic dielectric material and a preparation method thereof. It is made of KNbO with a mass percentage of 5‑20% 3 , 10‑20% SrTiO 3 and 70‑85% BiMg 0.1 Ti 0.7 o 3 consist of. The temperature stable ceramic dielectric material provided by the present invention, SrTiO 3 -BiMg 0.1 Ti 0.7 o 3 The dielectric ceramic has a moderate sintering temperature, generally around 1050°C, a high dielectric constant, adjustable capacity temperature coefficient and low loss, and is a dielectric ceramic material with excellent performance. The present invention selects SrTiO 3 -BiMg 0.1 Ti 0.7 o 3 system, take the addition of KNbO 3 It is a method of doping modification, which not only meets temperature stability, but also has the advantages of high dielectric constant and low dielectric loss.

The invention discloses a low-temperature co-fired ceramic dielectric material and a preparation method thereof. The material includes the following raw materials in mass percentage: glass powder 5-20%, Ca 0.95 La 0.05 Cu 2.8 Zn 0.2 Ti4O 12 80‑95%. Described glass powder comprises the raw material of following mass percent: Li 2 CO 3 5‑40%, ZnO 5‑30%, BaCO 3 5‑30%, CaCO 3 5‑30% and Kaolin 5‑30%. The preparation method is as follows: the raw materials are weighed according to the stoichiometric ratio of the general formula, and the frit A is obtained; 5-20% glass powder B and 80-95% frit A are mixed and ball-milled according to the mass percentage, and the binder is added , granulation, heat preservation at 800-850°C for 1 hour, and cooling. The ceramic dielectric material has low sintering temperature, high dielectric constant and low dielectric loss, and can be co-fired with silver metal internal electrodes with high conductivity.

The invention relates to a zinc oxide voltage dependent resistor medium material and a resistor preparation method, which belongs to the technology field of electronic material. The components of the zinc oxide voltage dependent resistor medium material comprises 85 percent to 95 percent of ZnO, 2 percent to 6 percent of Bi2O3, 1 percent to 5 percent of TiO2, 1 percent to 3.5 percent of Sb2O3, 1 percent to 4 percent of MnCO3, 1.2 percent to 5 percent of Co2O3, 0.2 percent to 1 percent of Cr2O3, 0.1 percent to 1 percent of ZrO2, 0.2 percent to 1 percent of Ni2O3 and 1.2 percent to 3 percent ofSiO2. The chip type zinc oxide resistor preparation method comprises the steps of dosing according to a zinc oxide resistor medium material medium material, material mixing, material grinding, casting sizing agent making, casting, inner electrode printing, laminating, baking, temperature isostatic pressing, cutting, gule discharging, sintering, end electrode making, and the like. The zinc oxide voltage dependent resistor medium material of the invention is suitable for making chip type voltage dependent resistor; the prepared chip type voltage dependent resistor has the characteristics of low voltage-dependent voltage, high nonlinear coefficient and stable voltage-dependent characteristic, the sintering temperature is moderate, preparation technology is simple and is easy to control, and cost is low.

The invention belongs to the technical field of ceramic dielectric materials, and provides a negative temperature coefficient ceramic dielectric material and a preparation method thereof in order to prevent the capacitor from increasing in capacitance due to temperature rise or other factors during use and to improve reliability. 10‑30% by weight of CaTiO 3 and 70‑90% by weight of K 2 Sr 4 (Nb 8 Mg 2 )O 27 composition. Conforms to EIA X7R standard, and the capacitance change rate within the temperature range of -55°C to 125°C does not exceed ±15%. It has good dielectric properties, the dielectric constant can reach about 4700 at 25°C, and the loss is 0.0065. It has a negative capacitance temperature coefficient, which can compensate for the increase in capacitance caused by temperature rise or other factors, and improve reliability. The sintering temperature range is wide, the performance is adjustable, the stability and reproducibility are good, and the reliability is high. It does not contain harmful substances such as heavy metals, and is environmentally friendly.