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Microwave ceramic dielectric material and preparation method thereof

A technology of dielectric materials and microwave ceramics, applied in the field of ceramic dielectric materials, can solve the problems of high loss, high sintering temperature, and low dielectric constant, and achieve the effect of low temperature coefficient of capacitance, high dielectric constant, and excellent microwave performance

Active Publication Date: 2022-05-27
TAIYUAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently reported more microwave ceramic materials are BaO-TiO 2 , Ca(Li 1 / 3 Nb 2 / 3 )O 3-δ 、 Bi 2 o 3 -ZnO-Nb 2 o 5 / Ta 2 o 5 、BaO-Ln 2 o 3 -TiO 2 (Ln=Nd, Sm) and Pb 1-x Ca x (Fe 1 / 2 , Nb 1 / 2 )O 3 and other dielectric ceramic materials, but these ceramic materials have problems such as high sintering temperature, low dielectric constant and high loss

Method used

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  • Microwave ceramic dielectric material and preparation method thereof
  • Microwave ceramic dielectric material and preparation method thereof
  • Microwave ceramic dielectric material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0023] A microwave ceramic dielectric material, comprising the following raw materials by mass percentage: Li 1.19 Ta 0.81 Ti 0.19 O 3 60%, TiO 2 20%, Ta 2 O 5 5%, Mn 2 O 3 5%, and 10% of glass powder, the glass powder includes the following raw materials by mass percentage: CaF 2 5%, P 2 O 5 25%, CaCO 3 30% and AlF 3 40%.

[0024] Its preparation process is as follows:

[0025] 1) The raw material Li 2 CO 3 , Ta 2 O 5 and TiO 2 According to the general formula Li 1.19 Ta 0.81 Ti 0.19 O 3 , carry out batching, ball mill for 6 hours on a ball mill with a rotational speed of 400r / min, dry at 100°C in a 3.3Gw ordinary oven, and pass 120 holes / cm 2 The sample sieve was heated to 1000°C at a rate of 5°C / min, and kept at 1000°C for 2 hours to obtain frit A.

[0026] 2) Weigh CaF 2 5g, P 2 O 5 25g, CaCO 3 30g and AlF 340g, mixed, melted and water-cooled, ground, and sieved to obtain glass powder B.

[0027] 3) carry out secondary batching, weig...

Embodiment 2

[0032] A microwave ceramic dielectric material, comprising the following raw materials by mass percentage: Li 1.19 Ta 0.81 Ti 0.19 O 3 80%, TiO 2 5%, Ta 2 O 5 5%, Mn 2 O 3 5%, and 5% glass powder, the glass powder includes the following raw materials in mass percentage: CaF 2 40%, P 2 O 5 5%, CaCO 3 30% and AlF 3 25%.

[0033] Its preparation process is as follows:

[0034] 1) The raw material Li 2 CO 3 , Ta 2 O 5 and TiO 2 According to the general formula Li 1.19 Ta 0.81 Ti 0.19 O 3 , carry out batching, ball mill for 7 hours on a ball mill with a rotating speed of 400r / min, dry at 100°C in a 3.3Gw ordinary oven, and pass 200 holes / cm 2 The sample sieve was heated to 1020°C at a rate of 6°C / min, and kept at 1020°C for 3 hours to obtain frit A.

[0035] 2) Weigh CaF 2 40g, P 2 O 5 5g, CaCO 3 30g and AlF 3 25g, mixed, melted and cooled with water, ground and sieved to obtain glass powder B.

[0036] 3) carry out secondary batching, weigh...

Embodiment 3

[0041] A microwave ceramic dielectric material, comprising the following raw materials by mass percentage: Li 1.19 Ta 0.81 Ti 0.19 O 3 70%, TiO 2 10%, Ta 2 O 5 10%, Mn 2 O 3 5%, and 5% glass powder, the glass powder includes the following raw materials in mass percentage: CaF 2 20%, P 2 O 5 30%, CaCO 3 20% and AlF 3 30%.

[0042] Its preparation process is as follows:

[0043] 1) The raw material Li 2 CO 3 , Ta 2 O 5 and TiO 2 According to the general formula Li 1.19 Ta 0.81 Ti 0.19 O 3 , carry out batching, ball mill for 8 hours on a ball mill with a rotational speed of 400r / min, dry at 100°C in a 3.3Gw ordinary oven, and pass 250 holes / cm 2 The sample sieve was heated to 1050°C at a rate of 7°C / min, and kept at 1050°C for 4 hours to obtain frit A.

[0044] 2) Weigh CaF 2 20g, P 2 O 5 30g, CaCO 3 20g and AlF 3 30g, mixed, melted and water-cooled, ground, and sieved to obtain glass powder B.

[0045] 3) carry out secondary batching, wei...

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PUM

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Abstract

The invention discloses a microwave ceramic dielectric material and a preparation method thereof. The microwave ceramic dielectric material comprises the following raw materials in percentage by mass: 60-80% of Li < 1.19 > Ta < 0.81 > Ti < 0.19 > O < 3 >, 25-20% of TiO < 5 >, 5-20% of Ta2O < 5 >, 5-20% of Mn2O < 5 > and 5-20% of glass powder. The glass powder is prepared from the following raw materials in percentage by mass: 25 to 40 percent of CaF, 5 to 30 percent of P2O5, 5 to 30 percent of CaCO and 5 to 40 percent of AlF. The ceramic dielectric material is low in sintering temperature, high in dielectric constant, low in dielectric loss and high in temperature stability.

Description

technical field [0001] The invention relates to a microwave ceramic dielectric material and a preparation method thereof, belonging to the technical field of ceramic dielectric materials. Background technique [0002] With the rapid development of 4G / 5G communication, aerospace communication, radar and other fields, as well as the proposal of the multi-layer design idea of ​​microwave devices, microwave devices are becoming more and more lightweight, miniaturized, high-frequency and multi-frequency operation, which has become the current Research hotspots of enterprises and research institutes. The low-temperature co-fired ceramic technology appeared in the 1980s. The core is to make low-temperature sintered ceramic powder into a green ceramic tape with precise and dense thickness, using laser drilling, micro-hole grouting and precision conductor paste printing according to the design process. The circuit layout is made and formed, and multiple components (such as capacitor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/622
CPCC04B35/495C04B35/622C04B2235/3203C04B2235/3232C04B2235/3265C04B2235/36C04B2235/6562C04B2235/6567C04B2235/6582C04B2235/658C04B2235/661Y02P20/10
Inventor 郭雅晶
Owner TAIYUAN NORMAL UNIV
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