Preparation method of low-temperature-sintering chip-type voltage dependent resistor material
A varistor, low-temperature sintering technology, applied in the field of scalable and convenient reclaiming structure, can solve the problems of increasing the cost of varistor, limiting the sintering temperature, reducing the sintering temperature, etc., to achieve stable varistor characteristics, high nonlinear coefficient, The effect of moderate sintering temperature
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Embodiment 1
[0017] The preparation method of the low-temperature sintered chip varistor material is characterized in that it comprises the following steps:
[0018] (1) Raw material preparation: based on 100 parts by weight, ZrO 2 1-3 parts, FeCl 2 2-5 servings, Fe 3 o 4 1-2 parts, Fe 2 o 3 1-2 parts, AlCl 3 1-3 parts, nano-Cr 2 o 3 1-4 parts, nano-SiO 2 2-5 parts, Mn 2 o 3 2-5 parts, the balance is ZnO;
[0019] (2) After mixing the raw materials in step (1), add deionized water, perform wet grinding for 48 hours, and dry at 140°C;
[0020] (3) Under the pressure of 5MPa, it is formed into a small disc with a thickness of Φ20mm and a thickness of 1.4mm, sintered in air at 700°C, kept for 6-8 hours, and then naturally cooled to room temperature;
[0021] (4) Burn silver on both sides of the fired porcelain body at a temperature of 800°C for 8 minutes.
Embodiment 2
[0023] The preparation method of the low-temperature sintered chip varistor material is characterized in that it comprises the following steps:
[0024] (1) Raw material preparation: based on 100 parts by weight, ZrO 2 1.2-2.8 parts, FeCl 2 2.3-4.6 parts, Fe 3 o 4 1.1-1.8 parts, Fe 2 o 3 1.3-1.9 parts, AlCl 3 1.4-2.7 parts, nano-Cr 2 o 3 1.4-3.5 parts, nano-SiO 2 2.3-4.6 parts, Mn 2 o 3 2.5-4.3 parts, the balance is ZnO;
[0025] (2) After mixing the raw materials in step (1), add deionized water, perform wet grinding for 49 hours, and dry at 143°C;
[0026] (3) Under the pressure of 6MPa, it is formed into a small disc with a diameter of Φ20mm and a thickness of 1.5mm, sintered in air at 720°C, kept for 7 hours, and then naturally cooled to room temperature;
[0027](4) Burn silver on both sides of the fired porcelain body at a temperature of 820°C for 9 minutes.
Embodiment 3
[0029] The preparation method of the low-temperature sintered chip varistor material is characterized in that it comprises the following steps:
[0030] (1) Raw material preparation: based on 100 parts by weight, ZrO 2 1.5-2.5 parts, FeCl 2 2.6-4.1 parts, Fe 3 o 4 1.3-1.6 parts, Fe 2 o 3 1.4-1.7 parts, AlCl 3 1.7-2.5 parts, nano-Cr 2 o 3 1.9-3.0 parts, nano-SiO 2 2.6-3.5 parts, Mn 2 o 3 2.9-3.8 parts, the balance is ZnO;
[0031] (2) After mixing the raw materials in step (1), add deionized water, carry out wet grinding for 50 hours, and dry at 145°C;
[0032] (3) Under the pressure of 6MPa, it is formed into a small disc with a diameter of Φ20mm and a thickness of 1.7mm, sintered in air at 750°C, kept for 6-8 hours, and then naturally cooled to room temperature;
[0033] (4) Burn silver on both sides of the fired porcelain body at a temperature of 830°C for 10 minutes.
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