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a tio 2 Preparation method of low-voltage varistor ceramic material

A varistor ceramic, low-voltage technology, applied in the direction of varistors, varistor cores, etc., can solve the problems of difficult integrated circuits, high varistor voltage, etc., to reduce the barrier height, reduce the varistor voltage, and increase the number Effect

Active Publication Date: 2019-11-22
XIAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Varistor ceramics refer to semiconductor ceramic devices whose resistance value changes nonlinearly with the change of voltage. Its microstructure is usually composed of semiconducting grains and insulating grain boundaries. Voltage protection materials are widely used in various circuits. Among them, ZnO varistors are the most widely studied and applied. Its outstanding advantage is that its nonlinear coefficient is large, but its varistor voltage is high, so it is difficult to be used as a semiconductor component. Used in low voltage integrated circuits

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  • a tio <sub>2</sub> Preparation method of low-voltage varistor ceramic material
  • a tio <sub>2</sub> Preparation method of low-voltage varistor ceramic material
  • a tio <sub>2</sub> Preparation method of low-voltage varistor ceramic material

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preparation example Construction

[0027] TiO of the present invention 2 The preparation method of low-voltage varistor ceramic material, such as figure 1 shown, including the following steps:

[0028] Step 1, follow the TiO 2 , Nb 2 o 5 , Bi 2 o 3 The mass ratio of TiO is 120~301:1:1.75~3.5, respectively weigh TiO 2 , Nb 2 o 5 , Bi 2 o 3 , where TiO 2 The particle size is 200nm~300nm;

[0029] Step 2, the TiO 2 , Nb 2 o 5 and Bi 2 o 3 After mixing with zirconia balls and absolute ethanol, place them in a polyester tank at a mass ratio of 1:1:1.5, ball mill at a speed of 350r / min to 450r / min for 8 to 12 hours, and then grind at 60°C to 70°C Dry at ℃ for 10h~14h, grind to obtain mixed powder;

[0030] Step 3, adding PVA solution with a mass fraction of 5% to the mixed powder obtained in step 2 dropwise, passing through a 20-mesh sieve to granulate, then sealing it with a plastic bag for 24 hours, and then pressing and molding to obtain a green body;

[0031] Step 4, debinding the green body ob...

Embodiment 1

[0043] TiO with a particle size of 200nm to 300nm and a purity of 99.5% 2 As raw material (Degussa AG), with Nb 2 o 5 (AR, 99.99%) and Bi 2 o 3 (AR, 99.99%) is an additive, the TiO used 2 , Nb 2 o 5 、 Bi 2 o 3 All are commercially available products. According to the mass ratio of TiO 2 : Nb 2 o 5 : Bi 2 o 3 =301:2:5 Weigh the ingredients, then put the batch ingredients, zirconia balls and absolute ethanol in a polyester tank with a mass ratio of 1:1:1.5, ball mill at a speed of 400r / min for 10h, and ball mill After completion, take out the obtained slurry, then dry the slurry in an oven at 70°C for 12 hours to exclude absolute ethanol, then grind it through a 325 mesh sieve, and then add an appropriate amount of 5% of the mass fraction to the sieved powder dropwise. Mix the PVA solution into the powder evenly, pass through a 20-mesh sieve to granulate, seal it with a plastic bag and place it for 24 hours; press the powder into a disc with a diameter of about 15m...

Embodiment 2

[0054] TiO with a particle size of 200nm to 300nm and a purity of 99.5% 2 As raw material (Degussa AG), with Nb 2 o5 (AR, 99.99%) and Bi 2 o 3 (AR, 99.99%) is an additive, the TiO used 2 , Nb 2 o 5 、 Bi 2 o 3 All are commercially available products. According to the mass ratio of TiO 2 : Nb 2 o 5 : Bi 2 o 3 =301:2:5 Weigh the ingredients, then put the batch ingredients, zirconia balls and absolute ethanol in a polyester tank with a mass ratio of 1:1:1.5, ball mill at a speed of 350r / min for 12h, and ball mill After completion, take out the obtained slurry, then dry the slurry in an oven at 60°C for 14 hours to exclude absolute ethanol, then grind it through a 325 mesh sieve, and then add an appropriate amount of 5% of the mass fraction to the sieved powder dropwise. Mix the PVA solution into the powder evenly, pass through a 20-mesh sieve to granulate, seal it with a plastic bag and place it for 24 hours; press the powder into a disc with a diameter of about 15mm ...

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Abstract

The invention discloses a preparation method of a TiO2 (titanium dioxide)-based low-voltage voltage-sensitive ceramic material. The preparation method comprises the following steps of mixing TiO2, Nb2O5 (niobium pentoxide) and Bi2O3 (bismuth trioxide), putting into a polyester tank, performing wet type ball milling, drying, and grinding, so as to obtain a mixed powder; granulating the mixed powder, and pressing, so as to obtain a plain blank; discharging glue out of the plain blank, sintering, and cooling a furnace to room temperature, so as to obtain TiO2 voltage-sensitive ceramic; grinding the TiO2 voltage-sensitive ceramic, cleaning, drying, and performing heat treatment, so as to obtain the TiO2-based low-voltage voltage-sensitive ceramic material. The preparation method of the TiO2-based low-voltage voltage-sensitive ceramic material has the advantages that by using the TiO2 as the raw material, and adding the Nb2O5 and Bi2O3, the TiO2 voltage-sensitive ceramic is prepared by the simple preparation technology; then, a sample is performed with heat treatment under H2 (hydrogen) or vacuum low-oxygen and differential-voltage atmosphere, the lattice oxygen of the TiO2 is volatized, the vacancy concentration of oxygen is increased, the number of semiconducting crystal grains is increased, the barrier height is reduced, the width is reduced, and the breakdown voltage is obviously reduced.

Description

technical field [0001] The invention belongs to the technical field of preparation of sensitive materials, in particular to a TiO 2 A method for preparing a low-voltage varistor-based ceramic material. Background technique [0002] Varistor ceramics refer to semiconductor ceramic devices whose resistance value changes nonlinearly with the change of voltage. Its microstructure is usually composed of semiconducting grains and insulating grain boundaries. Voltage protection materials are widely used in various circuits. Among them, ZnO varistors are the most widely studied and applied. Its outstanding advantage is that its nonlinear coefficient is large, but its varistor voltage is high, so it is difficult to be used as a semiconductor component. Used in low voltage integrated circuits. [0003] TiO 2 Based varistor ceramics have excellent volt-ampere nonlinear characteristics, high dielectric constant and other performance advantages, and its production process is simple, s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/115C04B35/46C04B35/634
CPCC04B35/46C04B35/63416C04B2235/3251C04B2235/3298C04B2235/5445C04B2235/6562C04B2235/6581C04B2235/6582
Inventor 赵敬忠张成果胡陈艳罗磊
Owner XIAN UNIV OF TECH
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